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DMNH10H028SPS-13 Equivalent & Substitute Parts
Part Overview
The DMNH10H028SPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100V drain-to-source voltage with 40A continuous drain current at 25°C case temperature. This device is housed in a PowerDI5060-8 surface mount package and is designed for power switching applications requiring high current handling capability. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.
Substitute parts are identified when equivalent electrical performance can be maintained across critical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance specifications. Alternative sources and package variants are evaluated based on parametric compatibility within the defined operating envelope.
Substiute Parts
Key Parameters
| Parameter | Value | Specification |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 100 V | Maximum voltage rating between drain and source terminals |
| Continuous Drain Current (Id) @ 25°C | 40A (Tc) | Maximum continuous current at case temperature |
| On-Resistance (Rds On) @ 20A, 10V | 28 mOhm | Maximum drain-to-source on-state resistance |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4V | Maximum gate-source threshold voltage |
| Gate Charge (Qg) @ 10V | 36 nC | Maximum total gate charge |
| Input Capacitance (Ciss) @ 50V | 2245 pF | Maximum input capacitance |
| Power Dissipation (Max) | 1.6W (Ta) | Maximum power dissipation at ambient temperature |
| Operating Temperature Range | -55°C to 175°C (TJ) | Junction temperature operating range |
| Package Type | 8-PowerTDFN | Surface mount power package |
| RoHS Status | ROHS3 Compliant | Regulatory compliance certification |
Substitute Part Grouping Explanation
Substitute parts are classified into two categories based on parametric equivalence and manufacturer designation:
Parametric Equivalent (Direct Substitutes): Parts that maintain identical electrical specifications across all critical parameters including Vdss, Id rating, Rds On, Vgs(th), gate charge, and input capacitance. These parts are interchangeable at the circuit design level and occupy the same physical package footprint.
Manufacturer Recommended Alternatives: Parts that share the same voltage and current class but may exhibit variations in secondary parameters such as gate charge, input capacitance, or thermal characteristics. These alternatives are suitable for applications where the primary design constraints are voltage and current ratings, with tolerance for minor performance variations in switching speed or thermal behavior.
The following parameters determine substitution eligibility:
- Drain-to-Source Voltage (Vdss): Must equal 100V
- Continuous Drain Current (Id): Must support minimum 40A at case temperature or equivalent thermal rating
- On-Resistance (Rds On): Must not exceed 28 mOhm at specified test conditions
- Gate Threshold Voltage (Vgs(th)): Must not exceed 4V at 250µA
- Package Type: Must be surface mount compatible with PowerDI5060-8 or equivalent footprint
- Compliance: Must maintain RoHS3 compliance and unlimited MSL rating
Parameter Comparison
| Parameter | DMNH10H028SPS-13 | DMNH10H028SPSQ-13 | FDMC86102 | FDMS86102LZ |
|---|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | onsemi | onsemi |
| Vdss (V) | 100 | 100 | 100 | 100 |
| Id @ 25°C (A) | 40 (Tc) | 40 (Tc) | 7 (Ta) / 20 (Tc) | 7 (Ta) / 22 (Tc) |
| Rds On @ 10V (mOhm) | 28 @ 20A | 28 @ 20A | 24 @ 7A | 25 @ 7A |
| Vgs(th) @ 250µA (V) | 4 | 4 | 4 | 2.5 |
| Qg @ 10V (nC) | 36 | 36 | 18 | 22 |
| Ciss @ 50V (pF) | 2245 | 2245 | 965 | 1305 |
| Power Dissipation (W) | 1.6 (Ta) | 1.6 (Ta) | 2.3 (Ta) / 41 (Tc) | 2.5 (Ta) / 69 (Tc) |
| Operating Temperature (°C) | -55 to 175 | -55 to 175 | -55 to 150 | -55 to 150 |
| Package | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PQFN (5x6) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
DMNH10H028SPSQ-13 (Diodes Incorporated): This part is a parametric equivalent to the primary part number DMNH10H028SPS-13, maintaining identical electrical specifications and the same PowerDI5060-8 package footprint. Both parts share the same base product number (DMNH10) and are manufactured by Diodes Incorporated. Selection between these two part numbers is determined by supply chain availability and packaging format (Tape & Reel). Both maintain Active product status, full RoHS3 compliance, and unlimited moisture sensitivity rating. This substitute is suitable for direct replacement in existing designs without circuit modification.
FDMC86102 (onsemi): This part is a manufacturer-recommended alternative from onsemi's PowerTrench® series. While it maintains the 100V Vdss rating and shares the 8-PowerTDFN package type, the continuous drain current rating is lower at 20A (Tc) compared to the primary part's 40A rating. The on-resistance is superior at 24 mOhm versus 28 mOhm, and gate charge is significantly reduced at 18 nC. This part is suitable for applications where the 40A current requirement can be reduced or where lower switching losses are prioritized. The maximum operating temperature is limited to 150°C versus 175°C for the primary part. RoHS3 compliance and unlimited MSL rating are maintained.
FDMS86102LZ (onsemi): This part is a manufacturer-recommended alternative from onsemi's PowerTrench® series, housed in an 8-PQFN (5x6) package variant. The continuous drain current rating is 22A (Tc), lower than the primary part's 40A specification. The on-resistance is 25 mOhm, and gate charge is 22 nC with reduced input capacitance at 1305 pF. The lower gate threshold voltage of 2.5V provides faster switching response. Maximum operating temperature is 150°C. This part is suitable for applications where current requirements are reduced and package footprint optimization is acceptable. RoHS3 compliance and unlimited MSL rating are maintained.
All substitute parts maintain regulatory compliance through RoHS3 certification and REACH unaffected status. Selection should be based on specific application requirements for continuous current capacity, thermal performance, and package compatibility within the target PCB layout.
Frequently Asked Questions (FAQ)
Q: Can DMNH10H028SPSQ-13 be used as a direct replacement for DMNH10H028SPS-13?
A: Yes. DMNH10H028SPSQ-13 is a parametric equivalent with identical electrical specifications, including 100V Vdss, 40A continuous drain current, 28 mOhm on-resistance, and the same 8-PowerTDFN package footprint. The difference between these part numbers relates to packaging format and supply chain designation. Both are manufactured by Diodes Incorporated and maintain the same performance characteristics.
Q: What are the key differences between the primary part and the onsemi alternatives?
A: The primary DMNH10H028SPS-13 is rated for 40A continuous drain current at case temperature. The onsemi FDMC86102 and FDMS86102LZ alternatives are rated for 20A and 22A respectively at case temperature. Both onsemi parts feature lower gate charge (18-22 nC versus 36 nC) and reduced input capacitance, resulting in faster switching characteristics. The onsemi parts have a maximum operating temperature of 150°C compared to 175°C for the Diodes part. These alternatives are suitable only for applications where the reduced current rating is acceptable.
Q: Are the package footprints compatible between all substitute parts?
A: DMNH10H028SPS-13, DMNH10H028SPSQ-13, and FDMC86102 all use the 8-PowerTDFN package with identical footprints. FDMS86102LZ uses an 8-PQFN (5x6) package, which has a different physical footprint. PCB layout modifications are required if substituting FDMS86102LZ into a design originally specified for the PowerTDFN package.
Q: Do all substitute parts maintain the same compliance certifications?
A: Yes. All parts listed—DMNH10H028SPS-13, DMNH10H028SPSQ-13, FDMC86102, and FDMS86102LZ—are RoHS3 compliant, REACH unaffected, and carry unlimited moisture sensitivity level (MSL 1) ratings. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.
Q: What is the maximum operating temperature difference between the primary part and alternatives?
A: The primary DMNH10H028SPS-13 operates to 175°C junction temperature. Both onsemi alternatives (FDMC86102 and FDMS86102LZ) are limited to 150°C maximum junction temperature. This 25°C difference may be significant in high-temperature applications or designs with limited thermal margin.
Q: Can FDMC86102 or FDMS86102LZ be used in applications requiring 40A continuous current?
A: No. FDMC86102 is rated for 20A continuous drain current at case temperature, and FDMS86102LZ is rated for 22A. These parts are not suitable for applications requiring the full 40A capability of the primary part. Selection of these alternatives requires circuit redesign or application of multiple devices in parallel.
Q: What is the significance of the gate charge difference between parts?
A: Gate charge (Qg) directly affects switching speed and driver power requirements. The primary part has 36 nC gate charge, while FDMC86102 has 18 nC and FDMS86102LZ has 22 nC. Lower gate charge enables faster switching transitions and reduces gate driver power dissipation. This difference is relevant in high-frequency switching applications where switching losses are a design constraint.
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