DMN7022LFGQ-13 Equivalent & Substitute Parts

Part Overview

The DMN7022LFGQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 75V drain-to-source voltage with 23A continuous drain current at 25°C. This device is packaged in a Surface Mount PowerDI3333-8 configuration and is designed for power switching applications requiring compact form factors and efficient thermal management.

The DMN7022LFGQ-13 is classified as Obsolete. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

DMN7022LFGQ-13

Diodes IncorporatedIn Stock: 9243DMN7022LFGQ-13 Datasheet

Current PartRFQ

DMTH8028LFVWQ-13

Diodes IncorporatedIn Stock: 4189DMTH8028LFVWQ-13 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMN7022LFGQ-13 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Technology: MOSFET (Metal Oxide) construction required
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 75V rating
• Continuous Drain Current (Id): Substitute must support minimum 23A at 25°C
• Gate Drive Voltage: Compatible with 4.5V to 10V drive range
• Vgs (Max): Must support ±20V gate voltage specification
• Operating Temperature Range: Substitute must cover -55°C to 150°C minimum

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: 8-PowerVDFN form factor required
• Supplier Device Package: PowerDI3333-8 footprint compatibility required

The DMTH8028LFVWQ-13 meets all electrical and mechanical substitution criteria. This part maintains N-Channel MOSFET topology, exceeds the Vdss requirement (80V vs. 75V), provides higher continuous drain current (27A vs. 23A), and utilizes the identical PowerDI3333-8 package footprint. The substitute part is classified as Active product status with AEC-Q101 automotive qualification.

Parameter Comparison

Engineering Selection Recommendations

The DMTH8028LFVWQ-13 is the qualified substitute for the obsolete DMN7022LFGQ-13. Selection of this substitute part is supported by the following engineering factors:

Product Status: The DMN7022LFGQ-13 is classified as Obsolete, creating supply chain risk for ongoing production. The DMTH8028LFVWQ-13 is classified as Active, ensuring continued availability and manufacturing support.

Compliance and Certification: Both parts maintain ROHS3 compliance and REACH Unaffected status, satisfying regulatory requirements. The DMTH8028LFVWQ-13 carries AEC-Q101 automotive qualification, providing additional quality assurance for applications requiring automotive-grade components.

Electrical Performance: The substitute part exceeds the original specification across key parameters. The 80V Vdss rating provides 5V additional margin over the 75V requirement. The 27A continuous drain current rating exceeds the 23A specification. Gate charge is significantly reduced (10.4 nC vs. 56.5 nC), improving switching efficiency. Input capacitance is reduced (631 pF vs. 2737 pF), enabling faster switching transitions.

Thermal Performance: The substitute part supports an extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C), providing 25°C additional margin at the upper temperature limit.

Package Compatibility: Both parts utilize the identical 8-PowerVDFN package footprint within the PowerDI3333-8 family. The substitute includes Wettable Flank technology, improving solder joint reliability and manufacturing process control.

Frequently Asked Questions (FAQ)

Q: Can the DMTH8028LFVWQ-13 be used as a direct replacement for the DMN7022LFGQ-13 in existing PCB designs?

A: Yes. Both parts utilize the identical 8-PowerVDFN package footprint and PowerDI3333-8 pinout configuration. No PCB layout modifications are required. The substitute part is electrically compatible across all critical parameters and exceeds the original specification.

Q: What are the key electrical differences between these two parts?

A: The DMTH8028LFVWQ-13 provides higher Vdss rating (80V vs. 75V), higher continuous drain current (27A vs. 23A), lower gate charge (10.4 nC vs. 56.5 nC), and lower input capacitance (631 pF vs. 2737 pF). These differences result in improved switching efficiency and thermal performance.

Q: Does the substitute part meet the same regulatory requirements?

A: Yes. Both parts are ROHS3 compliant and REACH Unaffected. The DMTH8028LFVWQ-13 additionally carries AEC-Q101 automotive qualification, providing enhanced quality assurance.

Q: What is the significance of the Wettable Flank feature on the substitute part?

A: Wettable Flank technology improves solder joint visibility and reliability during manufacturing inspection processes. This feature enhances process control and reduces defect rates in high-volume production environments.

Q: Are there any thermal performance differences between these parts?

A: The DMTH8028LFVWQ-13 supports an extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C), providing 25°C additional margin at the upper temperature limit. This extended range improves design margin for applications operating in elevated temperature environments.

Q: What is the product status difference, and why does it matter?

A: The DMN7022LFGQ-13 is classified as Obsolete, indicating discontinued manufacturing and limited supply availability. The DMTH8028LFVWQ-13 is classified as Active, ensuring continued production, technical support, and long-term supply chain stability.

Q: Are there any drive voltage compatibility concerns?

A: No. Both parts utilize identical drive voltage specifications (4.5V to 10V), ensuring compatibility with existing gate drive circuits and control electronics.

Q: How do the gate charge specifications affect circuit performance?

A: The substitute part exhibits significantly lower gate charge (10.4 nC vs. 56.5 nC). This reduction decreases gate drive power requirements and enables faster switching transitions, improving overall circuit efficiency and thermal performance.