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DMN65D8LT-13 Equivalent & Substitute Parts
Part Overview
The DMN65D8LT-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, designed for surface mount applications in the SOT-523 package. This device operates at a maximum drain-to-source voltage of 60V with a continuous drain current of 210mA and maximum power dissipation of 300mW. The component is currently in active production status with full RoHS3 compliance and REACH unaffected designation.
Substitute parts are identified when equivalent electrical and mechanical parameters are maintained across the same product family, enabling direct replacement in circuit designs without functional degradation.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 210 | mA |
| Power Dissipation (Max) | 300 | mW |
| Rds On (Max) @ 115mA, 10V | 5 | Ohm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2 | V |
| Gate Charge (Qg) @ 4.5V | 0.4 | nC |
| Input Capacitance (Ciss) @ 25V | 24 | pF |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | SOT-523 | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
The DMN65D8LT-13 belongs to the DMN65 base product family. Substitute parts within this family maintain identical electrical specifications across all critical parameters that define MOSFET functionality and circuit compatibility. The substitution logic is based on the following criteria:
Electrical Parameter Equivalence:
- Drain-to-source voltage rating (Vdss): 60V
- Continuous drain current (Id): 210mA
- On-state resistance (Rds On): 5 Ohm @ 115mA, 10V
- Gate threshold voltage (Vgs(th)): 2V @ 250µA
- Gate charge (Qg): 0.4 nC @ 4.5V
- Input capacitance (Ciss): 24 pF @ 25V
- Power dissipation: 300mW
Mechanical and Packaging Equivalence:
- Package type: SOT-523
- Mounting configuration: Surface Mount, Tape & Reel
- Operating temperature range: -55°C to 150°C
Compliance and Regulatory Equivalence:
- RoHS3 compliance status
- REACH unaffected designation
- Active product status
Parameter Comparison
| Parameter | DMN65D8LT-13 | DMN65D8LT-7 | Unit |
|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 60 | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 210 | 210 | mA |
| Rds On (Max) @ 115mA, 10V | 5 | 5 | Ohm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2 | 2 | V |
| Gate Charge (Qg) @ 4.5V | 0.4 | 0.4 | nC |
| Vgs (Max) | ±20 | ±20 | V |
| Input Capacitance (Ciss) @ 25V | 24 | 24 | pF |
| Power Dissipation (Max) | 300 | 300 | mW |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C |
| Package Type | SOT-523 | SOT-523 | — |
| Mounting Type | Surface Mount | Surface Mount | — |
| Packaging Format | Tape & Reel | Tape & Reel | — |
| Product Status | Active | Active | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
Both the DMN65D8LT-13 and DMN65D8LT-7 are active production components from Diodes Incorporated with identical electrical and mechanical specifications. Selection between these parts is based on inventory availability and supply chain considerations rather than functional differences.
DMN65D8LT-13 is suitable for applications requiring immediate availability, with 800 pieces in current stock.
DMN65D8LT-7 provides an alternative source with 956 pieces in current stock, offering enhanced supply continuity.
Both components satisfy RoHS3 compliance requirements and REACH regulatory obligations. Both are rated for the full operating temperature range of -55°C to 150°C, supporting applications across industrial, automotive, and consumer electronics segments.
Frequently Asked Questions (FAQ)
Q: Can DMN65D8LT-7 be used as a direct replacement for DMN65D8LT-13?
A: Yes. Both parts share identical electrical parameters including Vdss (60V), Id (210mA), Rds On (5 Ohm), and power dissipation (300mW). Both use the SOT-523 surface mount package and operate across the same temperature range (-55°C to 150°C). No circuit modifications are required.
Q: Are there any differences in package dimensions or pin configuration?
A: No. Both parts use the SOT-523 package with identical mechanical specifications and pin assignments. PCB layouts and assembly processes remain unchanged.
Q: Do both parts meet the same regulatory and compliance standards?
A: Yes. Both DMN65D8LT-13 and DMN65D8LT-7 are RoHS3 compliant and REACH unaffected. Both carry active product status from Diodes Incorporated.
Q: What is the difference between these two part numbers?
A: The part numbers differ only in their internal revision or manufacturing date code designation (suffix -13 versus -7). All electrical, mechanical, and performance characteristics are identical.
Q: Can these parts be used interchangeably in high-volume production?
A: Yes. The identical specifications and compliance certifications support interchangeable use in production environments. Inventory sourcing can alternate between both parts without design or qualification changes.
Q: What are the key parameters that define substitutability for this MOSFET?
A: Substitutability is determined by Vdss rating, continuous drain current, on-state resistance, gate threshold voltage, gate charge, input capacitance, power dissipation rating, operating temperature range, package type, and mounting configuration. All these parameters are identical between the two parts.
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