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DMN63D8LDW-13 Equivalent & Substitute Parts
Part Overview
The DMN63D8LDW-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in logic-level gate switching circuits. This component features a 30V drain-to-source voltage rating with 220mA continuous drain current capability and is housed in a 6-TSSOP (SOT-363) package. The device is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Substitute parts are identified when equivalent functional performance is required due to component availability, supply chain constraints, or design optimization within specified electrical and mechanical parameters.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30V | V |
| Current - Continuous Drain (Id) @ 25°C | 220mA | mA |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 250mA, 10V | Ohm |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 0.87nC @ 10V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 25V | pF |
| Power - Max | 300mW | mW |
| Operating Temperature Range | -55°C to 150°C | °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | — |
| Configuration | 2 N-Channel (Dual) | — |
| Technology | MOSFET (Metal Oxide) | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the DMN63D8LDW-13 is determined by electrical and mechanical compatibility within the following criteria:
Configuration Match: Both the main part and substitute must maintain dual N-channel MOSFET array architecture in SOT-363 surface mount packaging to ensure PCB layout and thermal management compatibility.
Voltage Rating: The substitute part must support the application's maximum drain-to-source voltage requirement. The DMN63D8LDW-13 operates at 30V Vdss; substitute parts with equal or higher voltage ratings (50V or greater) are electrically compatible for this parameter.
Current Capability: The substitute must provide continuous drain current (Id) equal to or exceeding the 220mA specification at 25°C to support the intended load without thermal derating.
Gate Threshold Voltage (Vgs(th)): Logic-level gate operation requires threshold voltage compatibility. Both parts specify 1.5V @ 250µA, ensuring compatible gate drive requirements.
On-State Resistance (Rds On): Lower on-state resistance values in substitute parts indicate improved performance characteristics and reduced power dissipation, provided the package thermal rating supports the application.
Package and Mounting: Both parts utilize identical 6-TSSOP (SOT-363) surface mount packaging, ensuring mechanical and thermal compatibility without PCB redesign.
Compliance and Certifications: Both parts maintain RoHS3 compliance, MSL Level 1 rating, and REACH unaffected status, ensuring regulatory and supply chain compatibility.
Parameter Comparison
| Parameter | DMN63D8LDW-13 (Diodes Inc.) | PJT138K-AU_R1_000A1 (Panjit) | Compatibility Notes |
|---|---|---|---|
| Manufacturer | Diodes Incorporated | Panjit International Inc. | Different manufacturers |
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | Matched |
| Drain to Source Voltage (Vdss) | 30V | 50V | Substitute rated higher; compatible |
| Current - Continuous Drain (Id) @ 25°C | 220mA | 360mA (Ta) | Substitute exceeds requirement |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 250mA, 10V | 1.6Ohm @ 500mA, 10V | Substitute has lower resistance |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | Matched |
| Gate Charge (Qg) (Max) @ Vgs | 0.87nC @ 10V | 1nC @ 4.5V | Substitute slightly higher; different test condition |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 25V | 50pF @ 25V | Substitute higher capacitance |
| Power - Max | 300mW | 236mW (Ta) | Substitute rated lower; verify thermal design |
| Operating Temperature Range | -55°C to 150°C | -55°C to 150°C | Matched |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | Matched |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Matched |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Matched |
| REACH Status | REACH Unaffected | REACH Unaffected | Matched |
Engineering Selection Recommendations
Primary Selection (DMN63D8LDW-13): This Diodes Incorporated component is the specified part for applications requiring 30V Vdss operation with 220mA continuous drain current. Active product status and established supply chain availability support standard procurement workflows. RoHS3 compliance and MSL Level 1 rating ensure regulatory conformance and simplified handling procedures.
Substitute Selection (PJT138K-AU_R1_000A1): The Panjit International Inc. PJT138K-AU_R1_000A1 serves as an electrical and mechanical substitute when the primary part is unavailable. This component provides higher voltage rating (50V Vdss) and superior current capability (360mA), enabling operation in applications with increased electrical headroom. Lower on-state resistance (1.6Ohm) reduces power dissipation compared to the primary part. Both components maintain identical package form factor (SOT-363), operating temperature range (-55°C to 150°C), and regulatory compliance status (RoHS3, REACH unaffected, MSL Level 1).
Thermal Consideration: The substitute part specifies 236mW maximum power rating at ambient temperature (Ta), compared to 300mW for the primary part. Thermal design verification is required when substituting in applications operating near maximum power dissipation limits.
Gate Drive Compatibility: Both parts specify identical gate threshold voltage (1.5V @ 250µA), ensuring compatible gate drive circuits without modification.
Frequently Asked Questions (FAQ)
Q: Can the PJT138K-AU_R1_000A1 directly replace the DMN63D8LDW-13 without PCB modifications?
A: Yes. Both components utilize identical 6-TSSOP (SOT-363) surface mount packaging with matching pin configurations. No PCB layout changes are required for mechanical substitution.
Q: What is the significance of the higher 50V Vdss rating on the substitute part?
A: The substitute's 50V drain-to-source voltage rating provides additional electrical margin for applications originally designed for 30V operation. This higher rating does not degrade performance in 30V circuits; it extends the component's operational envelope.
Q: Are gate drive circuits compatible between these two parts?
A: Yes. Both parts specify identical gate threshold voltage (Vgs(th)) of 1.5V @ 250µA, confirming logic-level gate compatibility. Existing gate drive circuits require no modification.
Q: How does the higher input capacitance (Ciss) of the substitute affect circuit performance?
A: The substitute's 50pF input capacitance (compared to 22pF for the primary part) increases gate charge requirements. In high-frequency switching applications, this may increase gate drive power consumption and switching losses. Circuit simulation is recommended for frequency-dependent designs.
Q: What is the impact of the substitute's lower maximum power rating (236mW vs. 300mW)?
A: The substitute's 236mW rating is specified at ambient temperature (Ta). Applications operating at maximum continuous drain current (360mA) and elevated ambient temperatures may approach this limit more quickly than the primary part. Thermal analysis of the specific application is necessary to confirm adequate thermal margin.
Q: Are both parts suitable for industrial temperature range applications?
A: Yes. Both components specify identical operating temperature range of -55°C to 150°C (junction temperature), supporting industrial and extended temperature applications.
Q: Do both parts meet the same regulatory compliance standards?
A: Yes. Both the DMN63D8LDW-13 and PJT138K-AU_R1_000A1 are RoHS3 compliant, REACH unaffected, and carry MSL Level 1 (unlimited) moisture sensitivity rating, ensuring equivalent regulatory and supply chain compatibility.
Q: What is the difference in on-state resistance between these parts?
A: The substitute exhibits lower on-state resistance (1.6Ohm @ 500mA, 10V) compared to the primary part (2.8Ohm @ 250mA, 10V). Lower resistance reduces conduction losses and heat generation, improving overall circuit efficiency.
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