DMN6069SFG-13 Equivalent & Substitute Parts

Part Overview

The DMN6069SFG-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 5.6A continuous drain current (Ta) and 18A (Tc). This device is housed in an 8-PowerVDFN surface mount package and is designed for general-purpose switching and amplification applications requiring moderate power dissipation handling. The part maintains Active product status and is ROHS3 compliant. Substitute parts are identified when equivalent electrical and mechanical parameters are maintained across the same device family, enabling seamless integration in existing designs without circuit modification.

Substiute Parts

DMN6069SFG-13
Diodes IncorporatedIn Stock: 9157DMN6069SFG-13 Datasheet
DMN6069SFG-13
Current Part
DMN6069SFG-7
Diodes IncorporatedIn Stock: 7610DMN6069SFG-7 Datasheet
DMN6069SFG-7
Parametric Equivalent

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current @ 25°C (Ta) 5.6 A
Continuous Drain Current @ 25°C (Tc) 18 A
On-Resistance (Rds On) @ 4.5A, 10V 50 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V
Gate Charge (Qg) @ 10V 25 nC
Input Capacitance (Ciss) @ 30V 1480 pF
Power Dissipation (Max) @ Ta 930 mW
Operating Temperature Range -55 to 150 °C
Package Type 8-PowerVDFN Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the DMN6069SFG-13 are identified based on strict electrical and mechanical parameter equivalence within the Diodes Incorporated DMN6069 device family. Substitution is valid when the following criteria are met:

Electrical Parameters (Must Match):

  • Drain-to-Source Voltage (Vdss): 60V
  • Continuous Drain Current (Ta): 5.6A
  • Continuous Drain Current (Tc): 18A
  • On-Resistance (Rds On): 50mOhm @ 4.5A, 10V
  • Gate Threshold Voltage: 3V @ 250µA
  • Gate Charge: 25nC @ 10V
  • Input Capacitance: 1480pF @ 30V
  • Power Dissipation: 930mW (Ta)
  • Operating Temperature Range: -55°C to 150°C

Mechanical Parameters (Must Match):

  • Package Type: 8-PowerVDFN
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8

Compliance & Status (Must Match):

  • Product Status: Active
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

The DMN6069SFG-7 is grouped as a parametric equivalent substitute because it maintains identical electrical specifications and mechanical packaging while differing only in tape reel configuration and inventory source designation.

Parameter Comparison

Parameter DMN6069SFG-13 DMN6069SFG-7 Match
Manufacturer Diodes Incorporated Diodes Incorporated
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vdss 60V 60V
Id @ 25°C (Ta) 5.6A 5.6A
Id @ 25°C (Tc) 18A 18A
Rds On (Max) @ 4.5A, 10V 50mOhm 50mOhm
Vgs(th) @ 250µA 3V 3V
Gate Charge @ 10V 25nC 25nC
Ciss @ 30V 1480pF 1480pF
Power Dissipation (Max) 930mW 930mW
Operating Temperature -55°C to 150°C -55°C to 150°C
Package / Case 8-PowerVDFN 8-PowerVDFN
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerDI3333-8 PowerDI3333-8
Product Status Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Both the DMN6069SFG-13 and DMN6069SFG-7 are suitable for direct substitution in applications requiring N-Channel MOSFET functionality at 60V with 5.6A continuous drain current. Selection between these parts is determined by supply chain availability and packaging configuration requirements rather than electrical performance differences.

Selection Criteria:

The DMN6069SFG-13 and DMN6069SFG-7 maintain identical electrical and thermal characteristics, supporting equivalent circuit performance in switching, amplification, and power management applications. Both devices are Active products with ROHS3 compliance and REACH unaffected status, meeting current regulatory requirements for industrial and commercial applications.

Substitution is valid for applications operating within the specified temperature range (-55°C to 150°C junction temperature) and power dissipation envelope (930mW Ta). The 8-PowerVDFN package provides thermal performance suitable for moderate power applications with adequate PCB thermal management.

Frequently Asked Questions (FAQ)

Q: Can DMN6069SFG-7 be used as a direct replacement for DMN6069SFG-13?

A: Yes. Both parts are parametric equivalents with identical electrical specifications, thermal ratings, and package configurations. No circuit modifications are required for substitution.

Q: What is the difference between DMN6069SFG-13 and DMN6069SFG-7?

A: The parts differ only in tape reel configuration and inventory source designation. All electrical parameters, thermal characteristics, and mechanical packaging are identical.

Q: Are there any compatibility issues when substituting these parts?

A: No compatibility issues exist. Both parts use the same 8-PowerVDFN surface mount package, have identical pin configurations, and maintain the same electrical performance specifications.

Q: What applications are suitable for the DMN6069SFG-13?

A: This N-Channel MOSFET is suitable for general-purpose switching applications, power management circuits, and amplification stages requiring 60V operation with moderate continuous current handling (5.6A Ta, 18A Tc).

Q: Is the DMN6069SFG-13 compliant with current environmental regulations?

A: Yes. The part is ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for industrial and commercial applications.

Q: What is the thermal performance of the 8-PowerVDFN package?

A: The 8-PowerVDFN package supports 930mW power dissipation at ambient temperature (Ta). Thermal performance depends on PCB layout, copper area, and thermal management implementation.

Q: Can these parts be used in high-temperature applications?

A: Yes. Both parts operate across the temperature range -55°C to 150°C junction temperature, supporting applications requiring extended thermal operating ranges.

Q: What is the gate charge specification and why is it important?

A: Gate charge is specified at 25nC @ 10V. This parameter determines switching speed and driver circuit requirements. Lower gate charge enables faster switching with reduced driver power consumption.

Q: Are there any moisture sensitivity concerns with these parts?

A: No. Both parts have Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity restrictions during storage, handling, or assembly.

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