DMN6068SEQ-13 Equivalent & Substitute Parts

Part Overview

The DMN6068SEQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 4.1A continuous drain current at 25°C. The device is packaged in SOT-223-3 surface mount configuration and is qualified to AEC-Q101 automotive standards. This part is currently in active production status with 12,763 units in stock.

Substitute parts are identified when electrical characteristics, mechanical packaging, and compliance certifications remain equivalent across the specified operating parameters. Alternative models may be required due to inventory constraints, supply chain considerations, or design revision updates while maintaining functional compatibility within the same application circuit.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	4.1	A (Ta)
Rds On (Max) @ 12A, 10V	68	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 10V	10.3	nC
Input Capacitance (Ciss) @ 30V	502	pF
Power Dissipation (Max)	2	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	SOT-223-3	—
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the DMN6068SEQ-13 are identified based on electrical and mechanical parameter equivalence. The substitution criteria are strictly limited to the following parameters:

Drain to Source Voltage (Vdss): 60V
Continuous Drain Current (Id) @ 25°C: 4.1A (Ta)
On-State Resistance (Rds On): 68mOhm @ 12A, 10V
Gate Threshold Voltage (Vgs(th)): 3V @ 250µA
Gate Charge (Qg): 10.3 nC @ 10V
Input Capacitance (Ciss): 502 pF @ 30V
Power Dissipation: 2W (Ta)
Operating Temperature Range: -55°C to 150°C (TJ)
Package Type: SOT-223-3 surface mount
Automotive Grade: AEC-Q101 qualified
Compliance: ROHS3 compliant, REACH unaffected

Parts meeting all these criteria are classified as parametric equivalents and direct substitutes. The DMN6068SE-13 meets all specified electrical and mechanical requirements for interchangeable use.

Parameter Comparison

Parameter	DMN6068SEQ-13	DMN6068SE-13	Unit
Manufacturer	Diodes Incorporated	Diodes Incorporated	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	60	V
Continuous Drain Current (Id) @ 25°C	4.1	4.1	A (Ta)
Rds On (Max) @ 12A, 10V	68	68	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	3	V
Gate Charge (Qg) @ 10V	10.3	10.3	nC
Input Capacitance (Ciss) @ 30V	502	502	pF
Power Dissipation (Max)	2	2	W (Ta)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	—
Package	SOT-223-3	SOT-223-3	—
Grade	Automotive	Automotive	—
Qualification	AEC-Q101	AEC-Q101	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
Product Status	Active	Active	—

Engineering Selection Recommendations

Both the DMN6068SEQ-13 and DMN6068SE-13 are active production parts manufactured by Diodes Incorporated with identical electrical specifications and mechanical packaging. Both devices carry AEC-Q101 automotive qualification and ROHS3 compliance certification, making them suitable for automotive and industrial applications requiring regulatory adherence.

The DMN6068SE-13 is available with higher inventory (44,681 units) compared to the DMN6068SEQ-13 (12,763 units), providing supply chain flexibility. Both parts share the same base product number (DMN6068) and are functionally interchangeable within circuits designed for N-Channel MOSFETs operating at 60V with 4.1A continuous drain current.

Selection between these parts should be based on availability, lead time requirements, and supply chain considerations. No electrical or thermal performance differences exist between the two devices.

Frequently Asked Questions (FAQ)

Q: Are the DMN6068SEQ-13 and DMN6068SE-13 pin-compatible?

A: Yes. Both devices use the SOT-223-3 surface mount package with identical pin configuration and footprint. Direct PCB substitution is possible without layout modifications.

Q: Can the DMN6068SE-13 replace the DMN6068SEQ-13 in automotive applications?

A: Yes. Both parts are AEC-Q101 qualified and carry automotive grade designation. Electrical characteristics, operating temperature range, and compliance certifications are identical.

Q: What is the difference between the DMN6068SEQ-13 and DMN6068SE-13 part numbers?

A: The part numbers differ in their suffix designation, but both devices share the same base product number (DMN6068) and identical electrical specifications. The suffix variation reflects packaging or distribution channel differences only.

Q: Are both parts RoHS compliant?

A: Yes. Both the DMN6068SEQ-13 and DMN6068SE-13 are ROHS3 compliant and REACH unaffected, meeting environmental regulatory requirements for electronic components.

Q: What is the moisture sensitivity level for these parts?

A: Both parts have Moisture Sensitivity Level (MSL) 1, which indicates unlimited shelf life without moisture control requirements during storage and handling.

Q: Can these MOSFETs be used in high-temperature applications?

A: Yes. Both devices are rated for operating junction temperatures from -55°C to 150°C (TJ), supporting extended temperature range applications within automotive and industrial environments.

Q: What is the maximum gate voltage these devices can withstand?

A: The maximum gate-to-source voltage (Vgs) is ±20V for both parts. Gate drive circuits must be designed to remain within this specification.

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