DMN5L06DWK-7 Equivalent & Substitute Parts

Part Overview

The DMN5L06DWK-7 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in the SOT-363 package. This device features a 50V drain-to-source voltage rating with 305mA continuous drain current capability and 250mW maximum power dissipation. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Configuration	2 N-Channel (Dual)	—
Drain to Source Voltage (Vdss)	50V	V
Continuous Drain Current (Id) @ 25°C	305mA	mA
On-Resistance (Rds On) @ Id, Vgs	2Ohm @ 50mA, 5V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	1V @ 250µA	V
Input Capacitance (Ciss) @ Vds	50pF @ 25V	pF
Power Dissipation (Max)	250mW	mW
Operating Temperature Range	-65°C to 150°C	°C
Package Type	SOT-363 (6-TSSOP, SC-88)	—
Technology	MOSFET (Metal Oxide)	—
FET Feature	Logic Level Gate	—

Substitute Part Grouping Explanation

Substitution of the DMN5L06DWK-7 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Configuration: Dual N-channel MOSFET array
Drain-to-Source Voltage (Vdss): Minimum 50V required
Continuous Drain Current (Id): Minimum 305mA at 25°C
Gate Threshold Voltage (Vgs(th)): Logic level operation (≤1.5V @ 250µA)
Power Dissipation: Minimum 250mW capability

Mechanical Compatibility Criteria:

Package Type: SOT-363, SC-88, or 6-TSSOP (physically and electrically equivalent)
Mounting Type: Surface mount
Pin configuration: 6-pin dual MOSFET array

Compliance Criteria:

RoHS3 compliance
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts are grouped into two categories based on voltage rating alignment:

Category A (50V Vdss - Direct Voltage Match): PJT138K_R1_00001, PJT7838_R1_00001

Category B (60V Vdss - Higher Voltage Rating): BSS138PS,115, NTJD5121NT1G

Category C (Lower Voltage Rating - Application Dependent): FDG6301N (25V), SI1902DL-T1-E3 (20V)

Category D (Reduced Current Rating - Application Dependent): UM6K33NTN (200mA)

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On (Ohm)	Vgs(th) (V)	Power Max (mW)	Package	Status
DMN5L06DWK-7	Diodes Incorporated	50	305	2 @ 50mA, 5V	1 @ 250µA	250	SOT-363	Obsolete
BSS138PS,115	Nexperia USA Inc.	60	320	1.6 @ 300mA, 10V	1.5 @ 250µA	420	6-TSSOP	Active
FDG6301N	onsemi	25	220	4 @ 220mA, 4.5V	1.5 @ 250µA	300	SC-88	Active
NTJD5121NT1G	onsemi	60	295	1.6 @ 500mA, 10V	2.5 @ 250µA	250	SC-88/SOT-363	Active
PJT138K_R1_00001	Panjit International Inc.	50	360	1.6 @ 500mA, 10V	1.5 @ 250µA	236	SOT-363	Active
PJT7838_R1_00001	Panjit International Inc.	50	400	1.45 @ 500mA, 10V	1 @ 250µA	350	SOT-363	Active
SI1902DL-T1-E3	Vishay Siliconix	20	660	0.385 @ 660mA, 4.5V	1.5 @ 250µA	270	SC-70-6	Active
UM6K33NTN	Rohm Semiconductor	50	200	2.2 @ 200mA, 4.5V	1 @ 1mA	120	UMT6	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

PJT7838_R1_00001 (Panjit International Inc.) is the optimal substitute when maximum compatibility is required. This part maintains the 50V Vdss rating, exceeds the 305mA current requirement with 400mA capability, and is packaged in SOT-363. The device is active, RoHS3 compliant, and carries MSL 1 rating. Higher power dissipation (350mW) provides thermal margin.

PJT138K_R1_00001 (Panjit International Inc.) serves as an alternative direct replacement with 50V Vdss and 360mA current rating in SOT-363 package. Active status and full compliance certifications apply.

Secondary Substitutes (Higher Voltage Rating):

BSS138PS,115 (Nexperia USA Inc.) provides 60V Vdss with enhanced current capability (320mA) and superior power handling (420mW). This part includes automotive qualification (AEC-Q101) and TrenchMOS™ technology. The 6-TSSOP package is mechanically equivalent to SOT-363. Suitable for applications where higher voltage margin is beneficial.

NTJD5121NT1G (onsemi) offers 60V Vdss with 295mA current rating closely matching the original specification. Packaged in SC-88/SOT-363 with active status and full compliance.

Application-Dependent Substitutes:

FDG6301N (onsemi) is suitable only for applications where 25V Vdss is sufficient. Current rating of 220mA falls below the original 305mA specification.

SI1902DL-T1-E3 (Vishay Siliconix) is suitable only for applications where 20V Vdss is sufficient. Despite high current capability (660mA), the reduced voltage rating limits applicability.

UM6K33NTN (Rohm Semiconductor) is suitable only for applications where 200mA current is sufficient. The 50V Vdss rating is maintained, but reduced current capability restricts use.

All recommended substitutes maintain RoHS3 compliance, MSL 1 rating, and surface mount configuration.

Frequently Asked Questions (FAQ)

Q: Can BSS138PS,115 replace DMN5L06DWK-7 in all applications?

A: BSS138PS,115 is electrically compatible for applications operating at or below 50V. The higher 60V Vdss rating provides additional voltage margin. Both parts are dual N-channel MOSFETs with logic level gate operation and equivalent package footprints (6-TSSOP and SOT-363 are mechanically compatible). Verify circuit design does not depend on the lower 50V rating of the original part.

Q: What is the difference between SOT-363 and SC-88 packages?

A: SOT-363 and SC-88 are equivalent designations for the same 6-pin surface mount package. Both refer to a compact dual MOSFET array package with identical pin configuration and footprint. Parts specified in either designation are mechanically and electrically interchangeable.

Q: Why is PJT7838_R1_00001 recommended over PJT138K_R1_00001?

A: PJT7838_R1_00001 provides higher current capability (400mA versus 360mA) and greater power dissipation headroom (350mW versus 236mW), both exceeding the original DMN5L06DWK-7 specifications. This additional margin improves thermal performance and reliability in demanding applications.

Q: Can FDG6301N be used as a substitute?

A: FDG6301N is suitable only for applications where the circuit operates at 25V or lower. The original DMN5L06DWK-7 is rated for 50V operation. Using FDG6301N in a 50V circuit will result in device failure. Additionally, the 220mA current rating is below the original 305mA specification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original part's compliance profile.

Q: What is the significance of logic level gate operation?

A: Logic level gate operation indicates the MOSFET can be fully switched by standard logic voltage levels (typically 3.3V or 5V). All listed substitutes maintain this feature, ensuring compatibility with existing gate drive circuits.

Q: Does operating temperature range affect substitution?

A: The original DMN5L06DWK-7 operates from -65°C to 150°C. Most substitutes operate from -55°C to 150°C, providing a narrower lower temperature range. For applications requiring operation below -55°C, verify the specific substitute part's temperature specification.

Q: Can UM6K33NTN replace DMN5L06DWK-7?

A: UM6K33NTN maintains the 50V Vdss rating but provides only 200mA continuous drain current, below the original 305mA specification. This part is suitable only for applications where current requirements do not exceed 200mA. The UMT6 package differs from SOT-363, requiring PCB layout modification.

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