DMN4468LSS-13 Equivalent & Substitute Parts

Part Overview

The DMN4468LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 10A continuous drain current at 25°C. This device is housed in an 8-SOIC surface mount package and is designed for general-purpose switching and amplification applications in power management circuits. The part is currently Active in product status with RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, design optimization, or supply chain considerations.

Substiute Parts

DMN4468LSS-13

Diodes IncorporatedIn Stock: 17612DMN4468LSS-13 Datasheet

Current PartRFQ

FDS6690A

onsemiIn Stock: 40000FDS6690A Datasheet

MFR RecommendedRFQ

FDS8878

Fairchild SemiconductorIn Stock: 32909FDS8878 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMN4468LSS-13 are qualified based on the following electrical and mechanical criteria:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss): Equal to or greater than 30V
• Continuous Drain Current (Id): Equal to or greater than 10A at 25°C
• On-State Resistance (Rds On): Within acceptable operating range at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Compatible with standard gate drive circuits
• Maximum Gate Voltage (Vgs): ±20V or greater
• Operating Temperature Range: -55°C to 150°C or broader

Mechanical Compatibility Requirements:

• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Moisture Sensitivity Level: MSL 1 or equivalent
• RoHS Compliance: ROHS3 Compliant

The substitute parts FDS6690A and FDS8878 meet these criteria and are functionally interchangeable with the DMN4468LSS-13 in applications where the specified electrical parameters are required.

Parameter Comparison

Engineering Selection Recommendations

DMN4468LSS-13 (Diodes Incorporated): Primary selection for applications requiring the specified electrical characteristics. Active product status with confirmed RoHS3 compliance and MSL 1 rating. Suitable for standard gate drive voltages with threshold voltage of 1.95V maximum. Power dissipation rated at 1.52W.

FDS6690A (onsemi): Direct substitute with enhanced current handling capability (11A versus 10A) and improved on-state resistance (12.5mOhm versus 14mOhm at 10V Vgs). Active product status with RoHS3 compliance and MSL 1 rating. Higher power dissipation rating (2.5W) provides additional thermal margin. Gate threshold voltage of 3V maximum requires verification against gate drive circuit specifications. Lower gate charge at 5V measurement point (16nC) indicates faster switching characteristics.

FDS8878 (Fairchild Semiconductor): Substitute option with continuous drain current of 10.2A and on-state resistance matching the primary part (14mOhm at 10V Vgs). Active product status. Gate threshold voltage of 2.5V maximum is compatible with standard gate drive circuits. Higher gate charge specification (26nC at 10V) indicates slower switching response compared to alternatives. Power dissipation rated at 2.5W. RoHS and MSL compliance status not specified in provided data.

All three parts share identical voltage ratings (30V Vdss), operating temperature range (-55°C to 150°C), maximum gate voltage (±20V), and 8-SOIC package geometry, confirming mechanical and thermal interchangeability.

Frequently Asked Questions (FAQ)

Q: Can FDS6690A replace DMN4468LSS-13 in all applications?

A: FDS6690A is electrically compatible as a substitute. The higher continuous drain current (11A versus 10A) and lower on-state resistance (12.5mOhm versus 14mOhm) provide equivalent or improved performance. However, the gate threshold voltage is specified at 3V maximum compared to 1.95V for the DMN4468LSS-13. Verify that the gate drive circuit can reliably switch the FDS6690A at the intended operating voltage.

Q: What is the difference in switching speed between these parts?

A: Gate charge specifications indicate switching characteristics. The DMN4468LSS-13 has 18.85nC at 10V, FDS6690A has 16nC at 5V, and FDS8878 has 26nC at 10V. Lower gate charge generally correlates with faster switching. Direct comparison requires measurement at identical gate voltage conditions. The FDS8878 exhibits the highest gate charge, indicating slower switching response.

Q: Are all three parts pin-compatible?

A: Yes. All three parts use the 8-SOIC (0.154", 3.90mm Width) package with identical pinout. Direct PCB substitution is mechanically feasible without layout modifications.

Q: Which substitute offers the best thermal performance?

A: FDS6690A and FDS8878 both have power dissipation ratings of 2.5W compared to 1.52W for the DMN4468LSS-13. Higher power dissipation ratings indicate greater thermal capability. The FDS6690A combines this with lower on-state resistance, resulting in reduced I²R losses during operation.

Q: Are there compliance differences between the substitutes?

A: DMN4468LSS-13 and FDS6690A are both confirmed ROHS3 compliant with MSL 1 rating. FDS8878 compliance status is not specified in the provided data. For applications requiring documented RoHS3 compliance and MSL 1 certification, DMN4468LSS-13 or FDS6690A are the appropriate selections.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Gate charge and input capacitance specifications affect high-frequency performance. FDS6690A has the lowest gate charge (16nC at 5V) and highest input capacitance (1205pF at 15V). DMN4468LSS-13 has moderate gate charge (18.85nC at 10V) and input capacitance (867pF at 10V). FDS8878 has the highest gate charge (26nC at 10V) and moderate input capacitance (897pF at 15V). Application-specific frequency requirements determine the optimal selection.

Q: What is the impact of different Vgs(th) specifications?

A: Gate threshold voltage determines the minimum gate voltage required to initiate conduction. DMN4468LSS-13 has 1.95V maximum, FDS6690A has 3V maximum, and FDS8878 has 2.5V maximum. Gate drive circuits must supply voltage above these thresholds. Lower threshold voltage (DMN4468LSS-13) allows operation with lower gate drive voltages, while higher threshold voltage (FDS6690A) requires higher gate drive voltage for reliable switching.