DMN31D5L-13 Equivalent & Substitute Parts

Part Overview

The DMN31D5L-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 500mA continuous drain current at 25°C. This device is packaged in SOT-23-3 surface mount configuration and is designed for general-purpose switching applications requiring low on-resistance performance. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across critical parameters including voltage rating, current capacity, on-resistance characteristics, and package form factor.

Substiute Parts

DMN31D5L-13
Diodes IncorporatedIn Stock: 1041DMN31D5L-13 Datasheet
DMN31D5L-13
Current Part
DMN31D5L-7
Diodes IncorporatedIn Stock: 12751DMN31D5L-7 Datasheet
DMN31D5L-7
Parametric Equivalent

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 500 mA
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.6 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15V
Power Dissipation (Max) 350 mW
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DMN31D5L-13 is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

  • Drain-to-Source Voltage (Vdss): 30V minimum rating
  • Continuous Drain Current (Id) @ 25°C: 500mA minimum
  • On-Resistance (Rds On) @ specified conditions: 1.5 Ohm maximum @ 10mA, 4V
  • Gate Threshold Voltage (Vgs(th)): 1.6V maximum @ 250µA
  • Gate Charge (Qg): 1.2 nC maximum @ 10V
  • Maximum Gate Voltage (Vgs): ±20V minimum
  • Input Capacitance (Ciss): 50 pF maximum @ 15V
  • Power Dissipation: 350mW maximum

Mechanical Equivalence Criteria:

  • Package Type: SOT-23-3 (TO-236-3, SC-59)
  • Mounting: Surface Mount
  • Pin Configuration: 3-pin

Compliance Equivalence Criteria:

  • RoHS3 Compliance
  • Moisture Sensitivity Level: MSL 1 (Unlimited)
  • Product Status: Active

The DMN31D5L-7 meets all specified electrical, mechanical, and compliance parameters and is classified as a parametric equivalent substitute.

Parameter Comparison

Parameter DMN31D5L-13 DMN31D5L-7 Match
Manufacturer Diodes Incorporated Diodes Incorporated Yes
FET Type N-Channel N-Channel Yes
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Yes
Drain to Source Voltage (Vdss) 30 V 30 V Yes
Current - Continuous Drain (Id) @ 25°C 500 mA 500 mA Yes
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 10mA, 4V 1.5 Ohm @ 10mA, 4V Yes
Vgs(th) (Max) @ Id 1.6 V @ 250µA 1.6 V @ 250µA Yes
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 10V 1.2 nC @ 10V Yes
Vgs (Max) ±20 V ±20 V Yes
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15V 50 pF @ 15V Yes
Power Dissipation (Max) 350 mW 350 mW Yes
Operating Temperature Range -55 to 150 °C (TJ) -55 to 150 °C (TJ) Yes
Mounting Type Surface Mount Surface Mount Yes
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 Yes
RoHS Status ROHS3 Compliant ROHS3 Compliant Yes
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Yes
Product Status Active Active Yes

Engineering Selection Recommendations

Both the DMN31D5L-13 and DMN31D5L-7 are Active products manufactured by Diodes Incorporated with identical electrical specifications and mechanical packaging. Selection between these parts is based on inventory availability and supply chain considerations rather than technical performance differences.

DMN31D5L-13 is suitable for applications where the specific tape and reel configuration designated by the "-13" suffix is required or preferred.

DMN31D5L-7 is suitable for applications where the specific tape and reel configuration designated by the "-7" suffix is required or preferred. This part number maintains higher inventory availability (12,700 pcs in stock versus 951 pcs for DMN31D5L-13).

Both parts satisfy RoHS3 compliance requirements and maintain unlimited moisture sensitivity rating (MSL 1), eliminating compliance-related constraints in component selection. Both are rated for identical operating temperature ranges (-55°C to 150°C junction temperature) and power dissipation limits (350mW).

Frequently Asked Questions (FAQ)

Q: Are DMN31D5L-13 and DMN31D5L-7 electrically interchangeable?

A: Yes. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications including 30V Vdss rating, 500mA continuous drain current, 1.5 Ohm on-resistance, and all other parametric values. The suffix designations (-13 and -7) indicate different tape and reel configurations but do not affect electrical performance.

Q: Can these parts be used interchangeably in PCB assembly?

A: Yes. Both parts use identical SOT-23-3 package configuration (also designated TO-236-3 or SC-59). Pin assignments and mechanical dimensions are identical, allowing direct substitution on PCBs designed for either part number.

Q: What is the difference between the -13 and -7 suffix designations?

A: The suffix designations refer to different tape and reel packaging configurations used during manufacturing and distribution. These differences do not affect the electrical characteristics or performance of the MOSFET itself.

Q: Are both parts RoHS3 compliant?

A: Yes. Both DMN31D5L-13 and DMN31D5L-7 are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the operating temperature range for these devices?

A: Both parts operate across a junction temperature range of -55°C to 150°C (TJ).

Q: What is the maximum power dissipation rating?

A: Both parts are rated for 350mW maximum power dissipation at ambient temperature (Ta).

Q: Can these N-Channel MOSFETs be used in high-frequency switching applications?

A: Yes. The gate charge specification of 1.2 nC @ 10V and input capacitance of 50 pF @ 15V support switching applications within the specified voltage and current ratings.

Q: What is the gate threshold voltage specification?

A: The gate threshold voltage (Vgs(th)) is specified at 1.6V maximum when measured at 250µA drain current. This parameter defines the gate voltage at which the MOSFET begins to conduct.

Q: Is the maximum gate voltage rating the same for both parts?

A: Yes. Both parts are rated for ±20V maximum gate voltage (Vgs).

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