DMN30H4D0L-13 Equivalent & Substitute Parts

Part Overview

The DMN30H4D0L-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, designed for surface mount applications in the SOT-23-3 package. This device operates at 300 V drain-to-source voltage with a continuous drain current rating of 250 mA and maximum power dissipation of 310 mW. The part is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Substitute parts are identified to address inventory availability, supply chain continuity, or specific manufacturing lot requirements while maintaining identical electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	250	mA
Rds On (Max) @ 300mA, 10V	4	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Power Dissipation (Max)	310	mW
Operating Temperature Range	−55 to 150	°C
Package Type	SOT-23-3	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the DMN30H4D0L-13 are identified based on strict parametric equivalence across all critical electrical and mechanical specifications. The substitution logic is based on the following key parameters that must remain identical:

Drain-to-source voltage (Vdss) of 300 V, continuous drain current (Id) of 250 mA at 25°C, on-resistance (Rds On) of 4 Ω at 300 mA and 10 V gate-source voltage, gate threshold voltage (Vgs(th)) of 3 V at 250 µA, maximum power dissipation of 310 mW, operating temperature range from −55°C to 150°C, SOT-23-3 package configuration, and surface mount mounting type. All substitute parts maintain identical RoHS3 compliance status, REACH unaffected classification, and MSL 1 moisture sensitivity level. Substitutes are drawn exclusively from Diodes Incorporated's DMN30 base product series.

Parameter Comparison

Parameter	DMN30H4D0L-13	DMN30H4D0L-7	Unit
Manufacturer	Diodes Incorporated	Diodes Incorporated	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	300	300	V
Continuous Drain Current (Id) @ 25°C	250	250	mA
Rds On (Max) @ 300mA, 10V	4	4	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	3	V
Gate Charge (Qg) (Max) @ 10V	7.6	7.6	nC
Input Capacitance (Ciss) (Max) @ 25V	187.3	187.3	pF
Power Dissipation (Max)	310	310	mW
Operating Temperature Range	−55 to 150	−55 to 150	°C
Package Type	SOT-23-3	SOT-23-3	—
Mounting Type	Surface Mount	Surface Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Active	Active	—

Engineering Selection Recommendations

Both the DMN30H4D0L-13 and DMN30H4D0L-7 are Active product status components manufactured by Diodes Incorporated with identical electrical and mechanical specifications. Selection between these parts is based on inventory availability and supply chain requirements rather than technical performance differences. The DMN30H4D0L-13 maintains 7,847 pieces in stock, while the DMN30H4D0L-7 maintains 15,420 pieces in stock. Both parts carry full RoHS3 compliance certification and REACH unaffected status, making them suitable for applications requiring regulatory compliance. The MSL 1 rating on both parts indicates unlimited shelf life under standard storage conditions. Direct substitution is permissible in all circuit applications where the DMN30H4D0L-13 is specified, provided the SOT-23-3 package footprint and surface mount assembly process remain unchanged.

Frequently Asked Questions (FAQ)

Q: Can the DMN30H4D0L-7 be used as a direct replacement for the DMN30H4D0L-13?

A: Yes. Both parts are parametrically identical across all electrical specifications including Vdss (300 V), Id (250 mA), Rds On (4 Ω), and power dissipation (310 mW). Both use the SOT-23-3 package and surface mount configuration. No circuit modifications are required.

Q: Are there any differences in compliance or regulatory status between these parts?

A: No. Both the DMN30H4D0L-13 and DMN30H4D0L-7 carry identical RoHS3 compliance, REACH unaffected status, and MSL 1 moisture sensitivity level. Both are classified as Active product status.

Q: What is the significance of the different part number suffixes (-13 versus -7)?

A: The suffix designations reflect different manufacturing lots or date codes from Diodes Incorporated. The electrical and mechanical specifications remain identical. The suffix does not indicate a functional or performance difference.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes. Both parts use the identical SOT-23-3 package footprint (TO-236-3, SC-59). No PCB layout modifications are required for substitution.

Q: What is the operating temperature range for both parts?

A: Both the DMN30H4D0L-13 and DMN30H4D0L-7 operate across a junction temperature range of −55°C to 150°C, suitable for industrial and automotive applications.

Q: Are there any gate drive voltage differences between these parts?

A: No. Both parts specify identical drive voltage characteristics with maximum Rds On at 2.7 V and minimum Rds On at 10 V. Gate threshold voltage (Vgs(th)) is 3 V at 250 µA for both parts.

Q: What is the maximum gate-source voltage rating for these MOSFETs?

A: Both parts are rated for ±20 V maximum gate-source voltage (Vgs), providing protection against overvoltage transients during switching operations.

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