DMN3070SSN-7 Equivalent & Substitute Parts

Part Overview

The DMN3070SSN-7 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 4.2A continuous drain current at 25°C. The device is housed in a SC-59-3 (SOT-23-3) surface mount package and is designed for general-purpose switching applications requiring compact form factors. The part is Active in product status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design optimization within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	4.2	A
On-Resistance (Rds On) @ 10V, 4.2A	40	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.1	V
Gate Charge (Qg) @ 10V	13.2	nC
Power Dissipation (Max)	780	mW
Operating Temperature Range	-55 to 150	°C
Package Type	SC-59-3 (SOT-23-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the DMN3070SSN-7 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Drain-to-Source Voltage (Vdss) of 30V to ensure equivalent voltage stress capability.

Current Rating: Substitute parts must support continuous drain current (Id) at or above the application requirement. The DMN3070SSN-7 specifies 4.2A; substitutes with lower current ratings (2.7A) are acceptable only when application current demand does not exceed the substitute's rating.

On-Resistance (Rds On): Substitutes with lower Rds On values provide improved efficiency and reduced power dissipation. Rds On values ranging from 36mOhm to 46mOhm are electrically compatible within typical switching applications.

Gate Threshold Voltage (Vgs(th)): All substitutes operate within the ±20V gate voltage specification. Threshold voltages between 2.0V and 3.0V are compatible with standard gate drive circuits.

Package Compatibility: All substitute parts are housed in SC-59-3 or TO-236AB packages, which are mechanically and electrically equivalent for PCB layout purposes.

Temperature Range: All substitutes support the full -55°C to 150°C operating temperature range.

Compliance: All substitute parts maintain ROHS3 compliance, MSL 1 rating, and Active product status.

Parameter Comparison

Parameter	DMN3070SSN-7 (Diodes)	FDN359AN (onsemi)	PMV42ENER (Nexperia)	PMV45EN2R (Nexperia)	RQ5E035BNTCL (Rohm)
Manufacturer	Diodes Incorporated	onsemi	Nexperia USA Inc.	Nexperia USA Inc.	Rohm Semiconductor
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	4.2	2.7	4.4	4.1	3.5
Rds On @ 10V (mOhm)	40	46	36	42	37
Vgs(th) @ 250µA (V)	2.1	3.0	2.0	2.0	2.5
Gate Charge @ 10V (nC)	13.2	7.0	9.0	6.3	6.0
Power Dissipation (mW)	780	500	500	510	1000
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SC-59-3 (SOT-23-3)	SOT-23-3	TO-236AB	TO-236AB	TSMT3 (SC-96)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

PMV42ENER (Nexperia USA Inc.) is the primary substitute for the DMN3070SSN-7. This part exceeds the original current specification at 4.4A versus 4.2A, provides superior on-resistance performance at 36mOhm, and maintains full compliance with ROHS3 and MSL 1 standards. The TO-236AB package is mechanically compatible with SC-59-3 footprints. Active product status ensures long-term availability.

PMV45EN2R (Nexperia USA Inc.) serves as a secondary substitute with 4.1A continuous drain current, closely matching the original 4.2A specification. On-resistance of 42mOhm and reduced gate charge of 6.3nC provide efficient switching characteristics. Full compliance certifications and Active status support production deployment.

RQ5E035BNTCL (Rohm Semiconductor) is suitable for applications where current demand does not exceed 3.5A. This part offers improved on-resistance at 37mOhm and reduced gate charge at 6.0nC. The TSMT3 package requires PCB layout verification for mechanical compatibility. Active product status and full compliance certifications apply.

FDN359AN (onsemi) is applicable only when application current requirements do not exceed 2.7A. The PowerTrench® series technology provides reduced gate charge at 7.0nC and lower power dissipation at 500mW. SOT-23-3 package compatibility is direct. Active product status and full compliance certifications are maintained.

All substitute parts maintain the 30V voltage rating, -55°C to 150°C operating temperature range, and equivalent gate voltage specifications (±20V). Selection should be based on specific application current requirements and PCB layout constraints.

Frequently Asked Questions (FAQ)

Q: Can the FDN359AN replace the DMN3070SSN-7 in all applications?

A: The FDN359AN is suitable only for applications where continuous drain current does not exceed 2.7A. The original DMN3070SSN-7 is rated for 4.2A. If the application requires the full 4.2A specification, the PMV42ENER or PMV45EN2R are appropriate substitutes.

Q: What is the difference between SC-59-3 and TO-236AB packages?

A: SC-59-3 and TO-236AB are equivalent package designations for the SOT-23-3 form factor. Both packages have identical pin configurations and PCB footprints. Mechanical compatibility is direct.

Q: Does the TSMT3 package used in the RQ5E035BNTCL require different PCB layout considerations?

A: The TSMT3 package (SC-96) has a different footprint than the SC-59-3 (SOT-23-3). PCB layout verification is required before substitution. Pin configuration and electrical function remain equivalent.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed—FDN359AN, PMV42ENER, PMV45EN2R, and RQ5E035BNTCL—are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity ratings.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge values (6.0nC to 7.0nC in substitutes) result in faster switching compared to the original 13.2nC specification. This improves efficiency but requires gate drive circuits capable of handling reduced charge requirements.

Q: Can I use the PMV42ENER if my application only requires 3.0A?

A: Yes. The PMV42ENER is rated for 4.4A continuous drain current, so it operates safely at 3.0A. The lower on-resistance (36mOhm) provides improved efficiency compared to the original 40mOhm specification.

Q: Are all substitute parts available in the same packaging options (Cut Tape and Digi-Reel)?

A: The DMN3070SSN-7, FDN359AN, and RQ5E035BNTCL are available in Cut Tape (CT) and Digi-Reel® packaging. The PMV42ENER and PMV45EN2R are supplied in Tape & Reel (TR) format. Packaging format should be verified with the supplier for procurement requirements.

Q: What is the operating temperature range for all parts?

A: All parts, including the original DMN3070SSN-7 and all substitutes, operate across the full -55°C to 150°C temperature range (TJ). No thermal derating is required within this specification.

Q: Is the Vgs(th) difference between parts significant for gate drive circuit design?

A: Gate threshold voltages range from 2.0V to 3.0V across all parts. Standard gate drive circuits operating at 5V or 10V accommodate this range without modification. The original 2.1V specification and substitute values of 2.0V to 3.0V are compatible with conventional PWM controllers and gate drivers.

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