DMN3033LSDQ-13 Equivalent & Substitute Parts

Part Overview

The DMN3033LSDQ-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 6.9A continuous drain current. This surface mount device is housed in an 8-SOIC package and is currently in active product status with ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, design optimization, or end-of-life considerations for related product lines.

Substiute Parts

DMN3033LSDQ-13

Diodes IncorporatedIn Stock: 3430DMN3033LSDQ-13 Datasheet

Current PartRFQ

FDS8978

onsemiIn Stock: 18384FDS8978 Datasheet

MFR RecommendedRFQ

FDS8984

onsemiIn Stock: 27879FDS8984 Datasheet

MFR RecommendedRFQ

PJL9408_R2_00001

Panjit International Inc.In Stock: 3351PJL9408_R2_00001 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMN3033LSDQ-13 are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 30V minimum
• Configuration: Dual N-Channel
• Package Type: 8-SOIC surface mount form factor
• Operating Temperature Range: -55°C to 150°C
• RoHS3 Compliance and MSL Level 1 rating

Performance Tolerance Parameters:

• Continuous Drain Current (Id): 6.9A or greater
• On-Resistance (Rds On): 20 mOhm or lower at rated conditions
• Gate Threshold Voltage (Vgs(th)): Within logic-level specifications
• Gate Charge (Qg): Comparable switching characteristics
• Input Capacitance (Ciss): Acceptable for circuit timing requirements

Substitutes meeting these criteria maintain functional equivalence in applications requiring dual N-channel MOSFET arrays with 30V ratings and surface mount packaging.

Parameter Comparison

Engineering Selection Recommendations

FDS8984 (onsemi): This substitute part is recommended for new designs and ongoing production. It maintains active product status, meets all critical electrical parameters with 7A continuous drain current, and provides equivalent 8-SOIC packaging. The 13 nC gate charge matches the main part specification, ensuring compatible switching performance. ROHS3 compliance and MSL Level 1 rating confirm environmental and handling compatibility.

FDS8978 (onsemi): This part meets voltage and package requirements with superior 7.5A drain current capability. However, product status is listed as obsolete, which restricts its use to legacy system support or applications where long-term availability is not required. The increased gate charge (26 nC) and input capacitance (1270 pF) may affect circuit timing characteristics compared to the main part.

PJL9408_R2_00001 (Panjit International Inc.): This substitute provides the highest drain current rating (8A) and lowest input capacitance (392 pF), with active product status. The significantly lower gate charge (4.3 nC @ 4.5V) indicates faster switching characteristics. ROHS3 compliance and MSL Level 1 rating confirm regulatory equivalence. Packaging and thermal operating range are fully compatible.

All substitute parts maintain the required 30V Vdss rating, surface mount 8-SOIC form factor, and -55°C to 150°C operating temperature range. Selection should prioritize active product status for long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can FDS8984 be used as a direct replacement for DMN3033LSDQ-13?

A: Yes. FDS8984 meets all critical electrical parameters: 30V Vdss, dual N-channel configuration, 7A continuous drain current (exceeds 6.9A requirement), and identical 8-SOIC package dimensions. Gate charge specification (13 nC @ 10V) matches the main part exactly. Both devices are ROHS3 compliant with MSL Level 1 rating and operate across -55°C to 150°C.

Q: Why is FDS8978 listed as obsolete?

A: FDS8978 carries an obsolete product status designation from the manufacturer. While it meets electrical and package requirements, obsolete status indicates the manufacturer has discontinued active production and support. Use of obsolete parts is restricted to legacy system maintenance where alternative solutions are not feasible.

Q: What are the key differences between PJL9408_R2_00001 and the main part?

A: PJL9408_R2_00001 provides higher drain current (8A versus 6.9A) and significantly lower gate charge (4.3 nC @ 4.5V versus 13 nC @ 10V), resulting in faster switching response. Input capacitance is substantially lower (392 pF @ 25V versus 725 pF @ 15V). These characteristics make it suitable for applications requiring enhanced switching speed. All critical parameters including 30V Vdss, 8-SOIC packaging, and operating temperature range remain compatible.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts are housed in 8-SOIC surface mount packages with 0.154" (3.90mm) width, matching the main part's mechanical footprint. This ensures direct PCB layout compatibility without redesign requirements.

Q: Do all parts meet the same environmental and compliance standards?

A: Yes. The main part and all substitute parts are ROHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity ratings. All parts operate across the identical -55°C to 150°C temperature range. REACH status is unaffected for all devices, and ECCN classification is EAR99 across the entire product set.

Q: Which substitute part should be selected for new product designs?

A: FDS8984 is the recommended choice for new designs due to its active product status, exact gate charge matching (13 nC @ 10V), and proven supply chain availability. PJL9408_R2_00001 is an alternative for applications requiring enhanced switching performance and lower input capacitance, also with active status. FDS8978 should be avoided for new designs due to obsolete status.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. FDS8984 and the main part both specify 13 nC @ 10V, ensuring identical gate drive requirements. FDS8978 requires 26 nC @ 10V, doubling gate drive energy. PJL9408_R2_00001 specifies 4.3 nC @ 4.5V, indicating significantly faster switching. Circuit gate driver selection must accommodate these differences to ensure proper switching performance.

Q: What is the significance of on-resistance (Rds On) specifications?

A: On-resistance directly affects power dissipation and thermal performance. The main part specifies 20 mOhm @ 6.9A, 10V. FDS8984 provides 23 mOhm @ 7A, 10V (slightly higher but acceptable for higher current rating). FDS8978 and PJL9408_R2_00001 both specify 18 mOhm, providing superior efficiency. Lower on-resistance reduces heat generation in high-current applications.