DMN3033LSD-13 Equivalent & Substitute Parts

Part Overview

The DMN3033LSD-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 6.9A continuous drain current. This surface mount component features logic level gate operation and is housed in an 8-SOIC package. The part is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package form factor and mounting technology. The following parts meet the substitution criteria based on matching or exceeding the critical electrical specifications of the DMN3033LSD-13.

Substiute Parts

DMN3033LSD-13
Diodes IncorporatedIn Stock: 26422DMN3033LSD-13 Datasheet
DMN3033LSD-13
Current Part
AO4818B
Alpha & Omega Semiconductor Inc.In Stock: 6180AO4818B Datasheet
AO4818B
MFR Recommended
FDS8978
onsemiIn Stock: 18384FDS8978 Datasheet
FDS8978
MFR Recommended
FDS8984
onsemiIn Stock: 27879FDS8984 Datasheet
FDS8984
MFR Recommended
IRF7904TRPBF
Infineon TechnologiesIn Stock: 2970IRF7904TRPBF Datasheet
IRF7904TRPBF
MFR Recommended
SH8KA4TB
Rohm SemiconductorIn Stock: 1432SH8KA4TB Datasheet
SH8KA4TB
MFR Recommended
STS10DN3LH5
STMicroelectronicsIn Stock: 80176STS10DN3LH5 Datasheet
STS10DN3LH5
MFR Recommended
STS8DN3LLH5
STMicroelectronicsIn Stock: 15280STS8DN3LLH5 Datasheet
STS8DN3LLH5
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 6.9 A
On-Resistance (Rds On) @ 6.9A, 10V 20 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.1 V
Gate Charge (Qg) @ 10V 13 nC
Input Capacitance (Ciss) @ 15V 725 pF
Maximum Power Dissipation 2 W
Operating Temperature Range -55 to 150 °C
Configuration 2 N-Channel (Dual)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
FET Feature Logic Level Gate

Substitute Part Grouping Explanation

Substitution of the DMN3033LSD-13 is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-source voltage rating must equal or exceed 30V
  • Continuous drain current must equal or exceed 6.9A at 25°C
  • On-resistance (Rds On) must not exceed 20mOhm at rated current and 10V gate-source voltage
  • Gate threshold voltage must fall within acceptable logic level gate operation range
  • Operating temperature range must encompass -55°C to 150°C

Physical Compatibility Criteria:

  • Package must be 8-SOIC form factor with 0.154" (3.90mm) width
  • Mounting type must be surface mount
  • Configuration must be dual N-channel

Regulatory Compliance:

  • ROHS3 compliance required
  • Moisture sensitivity level 1 (unlimited)

Parts listed below meet all electrical parameters within acceptable tolerances while maintaining identical package specifications and regulatory compliance status.

Parameter Comparison

Parameter DMN3033LSD-13 AO4818B FDS8978 FDS8984 IRF7904TRPBF SH8KA4TB STS10DN3LH5 STS8DN3LLH5
Manufacturer Diodes Inc. Alpha & Omega onsemi onsemi Infineon Rohm STMicroelectronics STMicroelectronics
Vdss (V) 30 30 30 30 30 30 30 30
Id @ 25°C (A) 6.9 8 7.5 7 7.6 / 11 9 10 10
Rds On (mOhm) 20 @ 6.9A, 10V 19 @ 8A, 10V 18 @ 7.5A, 10V 23 @ 7A, 10V 16.2 @ 7.6A, 10V 21.4 @ 9A, 10V 21 @ 5A, 10V 19 @ 5A, 10V
Vgs(th) (V) 2.1 @ 250µA 2.4 @ 250µA 2.5 @ 250µA 2.5 @ 250µA 2.25 @ 25µA 2.5 @ 1mA 1 @ 250µA 1 @ 250µA
Qg (nC) 13 @ 10V 18 @ 10V 26 @ 10V 13 @ 10V 11 @ 4.5V 15.5 @ 10V 4.6 @ 5V 5.4 @ 4.5V
Ciss (pF) 725 @ 15V 888 @ 15V 1270 @ 15V 635 @ 15V 910 @ 15V 640 @ 15V 475 @ 25V 724 @ 25V
Power Max (W) 2 2 1.6 1.6 1.4 / 2 3 2.5 2.7
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Configuration 2 N-Ch (Dual) 2 N-Ch (Dual) 2 N-Ch (Dual) 2 N-Ch (Dual) 2 N-Ch (Half Bridge) 2 N-Ch (Dual) 2 N-Ch (Dual) 2 N-Ch (Dual)
Product Status Active Active Obsolete Active Not For New Designs Not For New Designs Not For New Designs Active
ROHS3 Compliant Yes Yes Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

Primary Substitute (Recommended for New Designs):

AO4818B (Alpha & Omega Semiconductor Inc.) is the preferred substitute for the DMN3033LSD-13. This part maintains active production status, exceeds the minimum drain current specification (8A vs. 6.9A), and delivers superior on-resistance performance (19mOhm vs. 20mOhm). The AO4818B is ROHS3 compliant with identical operating temperature range and package specifications. Inventory availability is confirmed at 6,125 units.

STS8DN3LLH5 (STMicroelectronics) is an alternative substitute with active product status. This part provides higher drain current capability (10A) and lower on-resistance (19mOhm @ 5A, 10V). The STripFET™ V series technology delivers enhanced performance characteristics. Inventory availability is confirmed at 15,265 units.

Secondary Substitutes (Limited Application):

FDS8984 (onsemi) is an active product offering 7A continuous drain current with 23mOhm on-resistance. This part meets minimum electrical requirements but operates at the upper tolerance limit for on-resistance. The PowerTrench® series provides 1.6W maximum power dissipation. Inventory availability is confirmed at 27,800 units.

Parts Not Recommended for New Designs:

FDS8978 (onsemi) carries obsolete product status and should not be selected for new circuit designs despite meeting electrical specifications.

IRF7904TRPBF (Infineon) is marked "Not For New Designs" and carries HEXFET® technology. While electrical parameters are acceptable, the product lifecycle status restricts its use in new applications.

SH8KA4TB (Rohm Semiconductor) and STS10DN3LH5 (STMicroelectronics) are both marked "Not For New Designs" and should be avoided for new circuit implementations.

Frequently Asked Questions (FAQ)

Q: Can the AO4818B directly replace the DMN3033LSD-13 without circuit modification?

A: Yes. The AO4818B operates within identical voltage and temperature specifications, maintains the same 8-SOIC package footprint, and exceeds the minimum drain current and on-resistance requirements. No circuit modifications are required for direct substitution.

Q: What is the difference between the DMN3033LSD-13 and STS8DN3LLH5 in terms of performance?

A: Both parts share identical 30V voltage rating and -55°C to 150°C operating range. The STS8DN3LLH5 provides higher drain current capability (10A vs. 6.9A) and lower on-resistance (19mOhm vs. 20mOhm). The STS8DN3LLH5 is suitable for applications requiring higher current handling or lower power dissipation.

Q: Why is FDS8978 listed as a substitute if it is obsolete?

A: FDS8978 is included in the comparison table for reference purposes only. Its obsolete status makes it unsuitable for new circuit designs. Existing inventory may be available through secondary channels, but primary substitutes with active production status are strongly preferred.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this document carry ROHS3 compliance certification and unlimited moisture sensitivity level (MSL 1), matching the regulatory status of the DMN3033LSD-13.

Q: What is the significance of the "Not For New Designs" product status?

A: Parts marked "Not For New Designs" are in end-of-life phases or have been superseded by newer technology. While existing inventory may be available, these parts should not be selected for new circuit implementations. Use active status parts (AO4818B or STS8DN3LLH5) for new designs.

Q: Can I use IRF7904TRPBF as a substitute despite its "Not For New Designs" status?

A: The IRF7904TRPBF meets all electrical specifications and package requirements. However, its product lifecycle status restricts recommendation for new applications. If legacy system maintenance requires this part, it remains electrically compatible with the DMN3033LSD-13.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) values range from 4.6nC to 26nC across substitute options. Lower gate charge reduces driver power requirements and switching losses. The DMN3033LSD-13 specifies 13nC @ 10V. Parts with lower Qg (STS10DN3LH5 at 4.6nC, STS8DN3LLH5 at 5.4nC) offer improved switching efficiency, while parts with higher Qg require proportionally more driver current.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use the 8-SOIC package with 0.154" (3.90mm) width, ensuring identical PCB footprint compatibility. Surface mount assembly processes remain unchanged. Tape & Reel and Cut Tape packaging options are available across different manufacturers.

Q: Is on-resistance (Rds On) the primary factor in selecting a substitute?

A: On-resistance is a critical parameter affecting power dissipation and thermal performance. The DMN3033LSD-13 specifies 20mOhm @ 6.9A, 10V. Substitute parts with equal or lower on-resistance (AO4818B at 19mOhm, STS8DN3LLH5 at 19mOhm) provide equivalent or superior thermal characteristics. Parts exceeding 20mOhm (FDS8984 at 23mOhm) operate at reduced efficiency margins.

Request Quote (Ships tomorrow)