DMN3030LSS-13 Equivalent & Substitute Parts

Part Overview

The DMN3030LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 9A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and is designed for general-purpose switching and amplification applications. This part is currently in active product status with 35,000 units in stock.

Equivalent and substitute parts are identified when design requirements change, supply constraints occur, or when alternative manufacturers' components meet or exceed the electrical and mechanical specifications of the original part. Substitution is valid only when the replacement device maintains compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, gate threshold voltage, and package form factor.

Key Parameters

Parameter	DMN3030LSS-13 Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	9	A (Ta)
On-Resistance (Rds On Max) @ Id, Vgs	18 mOhm @ 9A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	2.1	V @ 250µA
Gate Charge (Qg Max) @ Vgs	25	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±25	V
Input Capacitance (Ciss Max) @ Vds	741	pF @ 15V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the DMN3030LSS-13 is determined by strict equivalence across the following critical parameters:

Mandatory Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Form Factor: Must be 8-SOIC (0.154", 3.90mm Width) for PCB layout compatibility
Mounting Type: Must be Surface Mount
FET Type: Must be N-Channel MOSFET technology
Operating Temperature Range: Must span -55°C to 150°C (TJ)

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): Substitute must support minimum 9A at 25°C
On-Resistance (Rds On): Lower or equal values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be within acceptable switching characteristics
Gate Charge (Qg): Lower values reduce switching losses
Maximum Gate Voltage (Vgs Max): Must accommodate ±25V or greater

Regulatory & Environmental Compliance:

RoHS3 Compliance required
MSL rating of 1 (Unlimited) preferred for manufacturing flexibility

The substitute parts listed below meet all mandatory criteria and are grouped by their electrical performance relative to the original specification.

Parameter Comparison

Parameter	DMN3030LSS-13	AO4468	FDS6612A	FDS8884	SI4178DY-T1-GE3	SI4800BDY-T1-E3	STS10N3LH5	Unit
Manufacturer	Diodes Inc.	Alpha & Omega	Fairchild	onsemi	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	—
Vdss	30	30	30	30	30	30	30	V
Id @ 25°C	9	10.5	8.4	8.5	12	6.5	10	A
Rds On (Max) @ Id, Vgs	18 @ 9A, 10V	14 @ 11.6A, 10V	22 @ 8.4A, 10V	23 @ 8.5A, 10V	21 @ 8.4A, 10V	18.5 @ 9A, 10V	21 @ 5A, 10V	mOhm
Vgs(th) (Max) @ Id	2.1 @ 250µA	3 @ 250µA	3 @ 250µA	2.5 @ 250µA	2.8 @ 250µA	1.8 @ 250µA	1 @ 250µA	V
Qg (Max) @ Vgs	25 @ 10V	24 @ 10V	7.6 @ 5V	13 @ 10V	12 @ 10V	13 @ 5V	4.6 @ 5V	nC
Vgs (Max)	±25	±20	±20	±20	±25	±25	±22	V
Ciss (Max) @ Vds	741 @ 15V	1200 @ 15V	560 @ 15V	635 @ 15V	405 @ 15V	—	475 @ 25V	pF
Power Dissipation (Max)	2.5 (Ta)	3.1 (Ta)	2.5 (Ta)	2.5 (Ta)	2.4 (Ta), 5 (Tc)	1.3 (Ta)	2.5 (Tc)	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	—
Product Status	Active	Not For New Designs	Active	Active	Active	Active	Not For New Designs	—
RoHS3 Compliant	Yes	Yes	—	Yes	Yes	Yes	Yes	—

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The following parts are recommended as direct substitutes based on active product status and full compliance with regulatory requirements:

FDS8884 (onsemi) — Functionally equivalent with matching 30V/8.5A rating and 2.5W power dissipation. Active product status with ROHS3 compliance and MSL 1 rating. On-resistance of 23 mOhm is marginally higher than the original 18 mOhm specification. Gate charge of 13 nC at 10V is lower, reducing switching losses. Suitable for direct replacement in existing designs.

FDS6612A (Fairchild Semiconductor) — Active product with PowerTrench® series technology. Rated for 30V/8.4A with 2.5W power dissipation matching the original specification. On-resistance of 22 mOhm is acceptable for most applications. Gate charge of 7.6 nC at 5V is significantly lower, providing improved switching efficiency. Ciss of 560 pF is lower than the original 741 pF, reducing input capacitance effects.

SI4178DY-T1-GE3 (Vishay Siliconix) — Active product with TrenchFET® technology. Rated for 30V/12A continuous drain current, exceeding the original 9A specification. On-resistance of 21 mOhm at 8.4A is comparable. Gate charge of 12 nC at 10V is lower. Input capacitance of 405 pF is significantly reduced. Vgs(th) of 2.8V is within acceptable range. Supports ±25V gate voltage matching the original specification. Higher current rating provides design margin.

SI4800BDY-T1-E3 (Vishay Siliconix) — Active product with TrenchFET® technology. Rated for 30V/6.5A, which is below the original 9A specification. On-resistance of 18.5 mOhm at 9A matches the original closely. Power dissipation of 1.3W is lower, indicating improved efficiency. Vgs(th) of 1.8V is lower than the original 2.1V. Suitable only for applications requiring less than 6.5A continuous current.

Secondary Substitutes (Not For New Designs Status):

AO4468 (Alpha & Omega Semiconductor) — Rated for 30V/10.5A with 3.1W power dissipation, exceeding original specifications. On-resistance of 14 mOhm at 11.6A is superior. However, product status is "Not For New Designs," limiting suitability for new development. Vgs(th) of 3V is higher than the original 2.1V. Vgs(Max) of ±20V is lower than the original ±25V. Suitable only for legacy design updates or when supply of active alternatives is unavailable.

STS10N3LH5 (STMicroelectronics) — Rated for 30V/10A with 2.5W power dissipation. On-resistance of 21 mOhm at 5A is acceptable. Product status is "Not For New Designs," limiting applicability. Vgs(th) of 1V is significantly lower than the original 2.1V. Vgs(Max) of ±22V is lower than the original ±25V. Gate charge of 4.6 nC at 5V is very low, providing excellent switching efficiency. Suitable only for legacy applications or when active alternatives are unavailable.

Recommendation Summary:

For new designs, select from FDS8884, FDS6612A, or SI4178DY-T1-GE3. All three are active products with full ROHS3 compliance and MSL 1 ratings. SI4178DY-T1-GE3 offers the highest current rating (12A) and lowest input capacitance (405 pF), providing the greatest design margin. FDS6612A offers the lowest gate charge (7.6 nC), optimizing switching performance. FDS8884 provides the closest electrical match to the original specification.

For legacy designs or when supply constraints require alternatives, AO4468 and STS10N3LH5 are available but should not be selected for new development due to their "Not For New Designs" status.

Frequently Asked Questions (FAQ)

Q: Can I use SI4178DY-T1-GE3 as a direct replacement for DMN3030LSS-13?

A: Yes. SI4178DY-T1-GE3 is a direct substitute. Both devices are rated for 30V drain-to-source voltage, housed in 8-SOIC packages, and support the same operating temperature range (-55°C to 150°C). SI4178DY-T1-GE3 exceeds the original 9A current specification with a 12A rating, providing additional design margin. On-resistance of 21 mOhm is comparable to the original 18 mOhm. Gate charge is lower at 12 nC, reducing switching losses. Both support ±25V gate voltage. No PCB layout modifications are required.

Q: What is the difference between the "Active" and "Not For New Designs" product status designations?

A: "Active" status indicates the manufacturer continues production and supports the part for new design implementations. "Not For New Designs" status indicates the manufacturer has discontinued active development and recommends against using the part in new applications, though existing inventory may remain available. For new designs, select only from parts with "Active" status to ensure long-term supply availability and manufacturer support.

Q: Why does AO4468 have higher power dissipation (3.1W) than the original DMN3030LSS-13 (2.5W)?

A: Power dissipation specifications are typically measured under specific test conditions and may reflect different measurement methodologies or thermal reference points (Ta vs. Tc). AO4468 has a lower on-resistance (14 mOhm) compared to the original (18 mOhm), which generally indicates lower conduction losses. The higher power dissipation rating may reflect more conservative thermal modeling or different test conditions. Verify thermal performance in your specific application before selection.

Q: Can I substitute SI4800BDY-T1-E3 if my application requires 9A continuous current?

A: No. SI4800BDY-T1-E3 is rated for only 6.5A continuous drain current at 25°C, which is below the 9A requirement. Using this part in an application requiring 9A would exceed its rated current capacity and result in device failure or reduced reliability. Select a substitute with a current rating of 9A or higher, such as FDS8884 (8.5A), AO4468 (10.5A), STS10N3LH5 (10A), or SI4178DY-T1-GE3 (12A).

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are RoHS3 compliant except FDS6612A, for which RoHS status is not specified in the provided data. Verify RoHS compliance with the manufacturer before selecting FDS6612A for applications requiring regulatory certification. All other substitutes (AO4468, FDS8884, SI4178DY-T1-GE3, SI4800BDY-T1-E3, and STS10N3LH5) are confirmed RoHS3 compliant.

Q: What is the significance of gate charge (Qg) in MOSFET substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. FDS6612A has the lowest gate charge at 7.6 nC (measured at 5V), followed by STS10N3LH5 at 4.6 nC (at 5V). The original DMN3030LSS-13 has 25 nC at 10V. Lower gate charge is advantageous in high-frequency switching applications but is not critical for low-frequency or DC applications. Select based on your circuit's switching frequency requirements.

Q: Do all substitute parts fit the same PCB footprint as DMN3030LSS-13?

A: Yes. All substitute parts are housed in 8-SOIC packages with identical dimensions (0.154", 3.90mm Width). PCB footprints are mechanically compatible without modification. However, verify pin assignments and functional connections with the device datasheets before assembly, as pin configurations may differ between manufacturers.

Q: What is the Moisture Sensitivity Level (MSL) and why does it matter?

A: MSL indicates the maximum time a component can be exposed to ambient moisture before assembly without baking. MSL 1 (Unlimited) means the part has no moisture sensitivity restrictions and can be stored indefinitely without special handling. All listed substitutes have MSL 1 ratings, matching the original DMN3030LSS-13. This simplifies supply chain management and manufacturing processes.

Q: Can I use FDS6612A in a circuit designed for ±25V gate voltage?

A: FDS6612A has a maximum gate voltage rating of ±20V, which is lower than the original DMN3030LSS-13 specification of ±25V. If your circuit applies gate voltages exceeding ±20V, FDS6612A is not suitable. Select alternatives with ±25V or higher ratings, such as DMN3030LSS-13, SI4178DY-T1-GE3, or SI4800BDY-T1-E3.

Q: What does "PowerTrench®" or "TrenchFET®" technology mean in the context of MOSFET selection?

A: PowerTrench® and TrenchFET® are proprietary manufacturing technologies used by Fairchild and Vishay respectively to optimize MOSFET performance. These technologies typically result in lower on-resistance, reduced gate charge, and improved thermal characteristics compared to conventional planar MOSFET designs. Both are advanced technologies that provide performance benefits, but substitution decisions should be based on electrical parameters rather than technology names.

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