DMN3029LFG-13 Equivalent & Substitute Parts

Part Overview

The DMN3029LFG-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 5.3A continuous drain current at 25°C. This device is packaged in an 8-PowerVDFN surface mount configuration and is designed for general-purpose switching and amplification applications. The part is currently in Active product status with ROHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, design flexibility, or manufacturing availability across multiple suppliers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	5.3	A (Ta)
On-Resistance (Rds On) @ 10A, 10V	18.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1.8	V
Gate Charge (Qg) @ 10V	11.3	nC
Input Capacitance (Ciss) @ 15V	580	pF
Power Dissipation (Max)	1	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-PowerVDFN	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the DMN3029LFG-13 is determined by the following critical parameters:

Electrical Equivalence Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 30V
Continuous Drain Current (Id) must support 5.3A or greater at 25°C
On-Resistance (Rds On) characteristics must be compatible with circuit requirements
Gate Threshold Voltage (Vgs(th)) must fall within acceptable switching margins
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Surface mount packaging with compatible footprint dimensions
8-pin configuration in PowerVDFN or equivalent form factor
RoHS3 compliance and MSL Level 1 rating

Substitution Categories:

Parametric Equivalents (Identical electrical specifications, same manufacturer):

DMN3029LFG-7: Identical electrical performance, alternative tape reel configuration
DMN3027LFG-7: Identical electrical performance, alternative base product number within Diodes Incorporated family

Manufacturer Recommended Alternatives (Enhanced performance or alternative suppliers):

AON7410 (Alpha & Omega Semiconductor): Higher current rating (9.5A Ta, 24A Tc), increased power dissipation capability, Not For New Designs status
RQ3E080GNTB (Rohm Semiconductor): 8A continuous current, 16.7mOhm Rds On, Active product status
STL10N3LLH5 (STMicroelectronics): 9A continuous current (Tc), 19mOhm Rds On, Active product status with STripFET™ V series designation

Parameter Comparison

Parameter	DMN3029LFG-13	DMN3029LFG-7	DMN3027LFG-7	AON7410	RQ3E080GNTB	STL10N3LLH5
Manufacturer	Diodes Inc.	Diodes Inc.	Diodes Inc.	Alpha & Omega	Rohm	STMicroelectronics
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	5.3 (Ta)	5.3 (Ta)	5.3 (Ta)	9.5 (Ta) / 24 (Tc)	8 (Ta)	9 (Tc)
Rds On @ 10V (mOhm)	18.6 @ 10A	18.6 @ 10A	18.6 @ 10A	20 @ 8A	16.7 @ 8A	19 @ 4.5A
Vgs(th) @ 250µA (V)	1.8	1.8	1.8	2.5	2.5	2.5
Qg @ 10V (nC)	11.3	11.3	11.3	12	5.8	6
Ciss @ 15V (pF)	580	580	580	660	295	900
Power Dissipation (W)	1 (Ta)	1 (Ta)	1 (Ta)	3.1 (Ta) / 20 (Tc)	2 (Ta) / 15 (Tc)	2 (Ta) / 50 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150
Package	8-PowerVDFN	8-PowerVDFN	8-PowerVDFN	8-DFN-EP (3x3)	8-HSMT (3.2x3)	PowerFlat™ (3.3x3.3)
Product Status	Active	Active	Active	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications):

DMN3029LFG-7 and DMN3027LFG-7 are parametric equivalents to the DMN3029LFG-13, offering identical electrical characteristics and full compatibility. Both parts maintain Active product status with ROHS3 compliance. Selection between these options depends on packaging configuration (tape reel variant) and supplier inventory availability. These substitutes are suitable for applications requiring no design modification.

For Enhanced Performance Applications:

RQ3E080GNTB (Rohm Semiconductor) provides improved on-resistance (16.7mOhm) and reduced gate charge (5.8nC), supporting higher current density applications. This part maintains Active product status and is compatible with thermal management requirements up to 15W (Tc). The 8-HSMT package offers alternative footprint geometry.

STL10N3LLH5 (STMicroelectronics) delivers the highest power dissipation capability (50W Tc) and supports 9A continuous current. The STripFET™ V series designation indicates advanced process technology. This part is suitable for high-power switching applications requiring superior thermal performance.

For Legacy or High-Volume Applications:

AON7410 (Alpha & Omega Semiconductor) carries "Not For New Designs" status and should not be selected for new product development. This part is retained in the substitute list based on historical cross-reference data but is not recommended for current design initiatives.

Compliance and Regulatory Considerations:

All substitute parts maintain ROHS3 compliance, MSL Level 1 rating, and REACH Unaffected status, ensuring regulatory equivalence with the primary part. All parts operate across the -55°C to 150°C temperature range required for industrial applications.

Frequently Asked Questions (FAQ)

Q: Can DMN3029LFG-7 be used as a direct replacement for DMN3029LFG-13?

A: Yes. DMN3029LFG-7 is a parametric equivalent with identical electrical specifications, including 30V Vdss, 5.3A continuous drain current, 18.6mOhm Rds On, and 1W power dissipation. The difference is the tape reel configuration. Both parts are Active status with ROHS3 compliance.

Q: What is the primary difference between DMN3027LFG-7 and DMN3029LFG-13?

A: Both parts share identical electrical performance (30V, 5.3A, 18.6mOhm Rds On). The difference is the base product number designation within the Diodes Incorporated family. Electrical substitution is direct; no circuit modification is required.

Q: When should RQ3E080GNTB be selected over the primary part?

A: RQ3E080GNTB is selected when improved on-resistance (16.7mOhm vs. 18.6mOhm) and reduced gate charge (5.8nC vs. 11.3nC) provide circuit performance benefits. This part supports 8A continuous current and 15W thermal dissipation (Tc), making it suitable for higher-efficiency switching applications. The 8-HSMT package footprint differs from the primary part.

Q: Is AON7410 suitable for new product designs?

A: No. AON7410 carries "Not For New Designs" product status. While it offers higher current capability (9.5A Ta, 24A Tc) and power dissipation (20W Tc), it should not be selected for new development initiatives. Use STL10N3LLH5 or RQ3E080GNTB for enhanced performance requirements.

Q: What are the package compatibility considerations for substitution?

A: The primary part uses 8-PowerVDFN packaging. Substitute parts employ alternative surface mount packages: AON7410 uses 8-DFN-EP (3x3), RQ3E080GNTB uses 8-HSMT (3.2x3), and STL10N3LLH5 uses PowerFlat™ (3.3x3.3). PCB footprint redesign is required when switching between package types. All packages are surface mount with compatible pin counts and thermal characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance, MSL Level 1 rating, and REACH Unaffected status, ensuring regulatory equivalence with DMN3029LFG-13.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects switching speed and driver circuit requirements. DMN3029LFG-13 has 11.3nC Qg, while RQ3E080GNTB (5.8nC) and STL10N3LLH5 (6nC) have lower values, enabling faster switching transitions. Lower gate charge reduces driver power consumption and heat generation in high-frequency applications.

Q: Can STL10N3LLH5 replace DMN3029LFG-13 in all applications?

A: STL10N3LLH5 is electrically compatible with higher performance margins (9A continuous current, 50W Tc power dissipation, 19mOhm Rds On). However, the PowerFlat™ package footprint differs from 8-PowerVDFN, requiring PCB layout modification. Electrical substitution is valid; mechanical redesign is necessary.

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