DMN3025LSS-13 Equivalent & Substitute Parts

Part Overview

The DMN3025LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 7.2A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and is designed for general-purpose switching and amplification applications. This part is currently in active production status with 27,900 units in stock inventory.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including drain-to-source voltage rating, continuous drain current capacity, on-resistance characteristics, gate charge, and package form factor. Substitution becomes necessary due to supply chain considerations, design optimization requirements, or inventory availability.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7.2	A (Ta)
On-Resistance (Rds On Max) @ 10A, 10V	20	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2	V
Gate Charge (Qg Max) @ 10V	13.2	nC
Input Capacitance (Ciss Max) @ 15V	641	pF
Power Dissipation (Max)	1.4	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
Gate Voltage (Vgs Max)	±20	V

Substitute Part Grouping Explanation

Equivalent and substitute parts for the DMN3025LSS-13 are identified based on the following critical parameters that must remain within acceptable operating ranges:

Voltage Rating Compatibility: All substitute parts maintain the 30V drain-to-source voltage (Vdss) rating, ensuring compatibility with circuit designs rated for this voltage class.

Current Capacity: Substitute parts are selected with continuous drain current (Id) ratings at or above the 7.2A specification, ensuring the device can handle the same or greater load conditions.

On-Resistance (Rds On): The on-resistance characteristic at specified gate voltage and current levels determines switching losses and thermal performance. Substitute parts maintain comparable Rds On values within acceptable engineering tolerances.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute parts are evaluated for gate charge compatibility to ensure proper gate drive circuit operation.

Package Compatibility: All substitute parts are housed in 8-SOIC surface mount packages with identical physical dimensions (0.154", 3.90mm width), ensuring direct PCB layout compatibility.

Temperature Range: All parts operate across the -55°C to 150°C junction temperature range, maintaining thermal performance consistency.

Compliance Status: RoHS3 compliance and REACH unaffected status are maintained across all substitute selections.

Parameter Comparison

Parameter	DMN3025LSS-13 (Diodes)	FDS6612A (Fairchild)	STS10N3LH5 (STMicroelectronics)
Manufacturer	Diodes Incorporated	Fairchild Semiconductor	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V	30 V
Continuous Drain Current (Id) @ 25°C	7.2 A (Ta)	8.4 A (Ta)	10 A (Tc)
Rds On (Max) @ Specified Conditions	20 mOhm @ 10A, 10V	22 mOhm @ 8.4A, 10V	21 mOhm @ 5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2 V	3 V	1 V
Gate Charge (Qg Max)	13.2 nC @ 10V	7.6 nC @ 5V	4.6 nC @ 5V
Input Capacitance (Ciss Max) @ Vds	641 pF @ 15V	560 pF @ 15V	475 pF @ 25V
Power Dissipation (Max)	1.4 W (Ta)	2.5 W (Ta)	2.5 W (Tc)
Operating Temperature Range	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Vgs (Max)	±20 V	±20 V	±22 V
Product Status	Active	Active	Not For New Designs
RoHS3 Compliance	Compliant	Not specified	Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Not specified	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: FDS6612A (Fairchild Semiconductor)

The FDS6612A is an active production device that provides direct electrical and mechanical compatibility with the DMN3025LSS-13. This part exceeds the continuous drain current specification at 8.4A compared to 7.2A, offering improved current handling capacity. The on-resistance of 22 mOhm at 8.4A, 10V is within acceptable tolerance of the original 20 mOhm specification. The FDS6612A features lower gate charge (7.6 nC @ 5V) and reduced input capacitance (560 pF @ 15V), which can improve switching performance in gate-driven applications. The 8-SOIC package dimensions are identical, ensuring direct PCB compatibility. This part is recommended for new designs and ongoing production applications.

Secondary Substitute: STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 offers the highest continuous drain current rating at 10A, providing the greatest current margin above the 7.2A requirement. This device features the lowest gate charge (4.6 nC @ 5V) and input capacitance (475 pF @ 25V) among the three options, resulting in faster switching characteristics and reduced gate driver stress. The on-resistance of 21 mOhm @ 5A, 10V is comparable to the original specification. However, this part carries a "Not For New Designs" product status designation, indicating that STMicroelectronics has discontinued active development and support for this device. The STS10N3LH5 is suitable for legacy system maintenance and replacement applications where existing designs are already qualified on this component. The 8-SOIC package provides identical mechanical compatibility.

Compliance and Regulatory Considerations

Both the DMN3025LSS-13 and STS10N3LH5 are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. The FDS6612A compliance status is not specified in the provided data. All three devices are EAR99 classified and REACH unaffected. For new design implementations, the FDS6612A is the preferred selection due to active product status and confirmed compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can the FDS6612A be used as a direct replacement for the DMN3025LSS-13 without PCB modifications?

A: Yes. Both devices are housed in 8-SOIC packages with identical physical dimensions (0.154", 3.90mm width). The pin configuration and electrical characteristics are compatible, allowing direct substitution on existing PCB layouts without design changes.

Q: What is the significance of the "Not For New Designs" status on the STS10N3LH5?

A: This designation indicates that STMicroelectronics has discontinued active development and support for this device. While the part remains functionally compatible and available in inventory (15,265 units), it is not recommended for new product designs. The STS10N3LH5 is appropriate for maintaining existing systems or replacing failed components in legacy applications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. The DMN3025LSS-13 requires 13.2 nC @ 10V, while the FDS6612A requires 7.6 nC @ 5V and the STS10N3LH5 requires 4.6 nC @ 5V. Lower gate charge reduces switching time and decreases gate driver power dissipation. Substitutes with lower gate charge may improve overall circuit efficiency but require verification that the gate driver circuit can supply the required current at the specified voltage levels.

Q: Are there thermal performance differences between these devices?

A: The DMN3025LSS-13 is rated for 1.4W maximum power dissipation at ambient temperature (Ta), while both the FDS6612A and STS10N3LH5 are rated for 2.5W. The higher power dissipation ratings of the substitute parts indicate improved thermal performance characteristics. However, actual thermal performance in a specific application depends on PCB layout, thermal management design, and operating conditions. The on-resistance values (20-22 mOhm) are comparable across all three devices, suggesting similar switching loss characteristics.

Q: What is the impact of different gate threshold voltages?

A: The gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn the device on. The DMN3025LSS-13 has a 2V threshold, the FDS6612A has 3V, and the STS10N3LH5 has 1V. These differences affect gate driver circuit design and switching response characteristics. A lower threshold voltage (STS10N3LH5 at 1V) allows operation with lower gate drive voltages, while a higher threshold (FDS6612A at 3V) requires higher gate drive voltage for full conduction. Verify that the gate driver circuit in your application can supply the required voltage levels for the selected substitute.

Q: Is the 8-SOIC package suitable for high-frequency switching applications?

A: The 8-SOIC package is a standard surface mount package suitable for general-purpose switching applications. All three devices in this comparison are available in this package type. For high-frequency applications, the lower gate charge and input capacitance values of the FDS6612A and STS10N3LH5 provide advantages in reducing switching losses and improving efficiency. PCB layout practices, including gate drive trace routing and thermal management, are critical for high-frequency performance regardless of package type.

Q: What inventory considerations should influence the substitution decision?

A: The DMN3025LSS-13 has 27,900 units in stock, the FDS6612A has 67,600 units, and the STS10N3LH5 has 15,265 units. For immediate availability and long-term supply security, the FDS6612A offers the largest inventory position. The DMN3025LSS-13 maintains adequate stock for ongoing production. The STS10N3LH5, despite its "Not For New Designs" status, maintains sufficient inventory for legacy system support and replacement applications.

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