DMN3024LSS-13 Equivalent & Substitute Parts

Part Overview

The DMN3024LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 6.4A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is classified as Active product status. The part is ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Substitute parts are necessary when the primary part reaches end-of-life status, inventory constraints occur, or when design requirements call for enhanced electrical performance within compatible parameter ranges. The substitute parts listed maintain electrical and mechanical compatibility while offering equivalent or superior performance characteristics.

Substiute Parts

DMN3024LSS-13

Diodes IncorporatedIn Stock: 3187DMN3024LSS-13 Datasheet

Current PartRFQ

FDS6612A

Fairchild SemiconductorIn Stock: 67646FDS6612A Datasheet

MFR RecommendedRFQ

FDS8884

onsemiIn Stock: 70235FDS8884 Datasheet

MFR RecommendedRFQ

IRF7403TRPBF

Infineon TechnologiesIn Stock: 7169IRF7403TRPBF Datasheet

MFR RecommendedRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the DMN3024LSS-13 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• FET Type: N-Channel only
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Surface Mount
• Package: 8-SOIC or 8-SO (mechanically compatible)
• Operating Temperature Range: Must encompass -55°C to 150°C

Performance Parameters (Substitutes must meet or exceed):

• Continuous Drain Current (Id): Minimum 6.4A at 25°C
• Rds On (Max) @ 10V Vgs: 24mOhm or lower
• Gate Charge (Qg): Lower values preferred for switching efficiency
• Power Dissipation: 1.6W or higher

All substitute parts listed maintain full compatibility with these criteria. Substitutes may exhibit superior current handling, lower on-resistance, or reduced gate charge while maintaining identical voltage ratings and package footprints.

Parameter Comparison

Engineering Selection Recommendations

For Active Product Status Applications:

FDS6612A and FDS8884 are both classified as Active products and are recommended for new designs. Both parts exceed the electrical performance of the DMN3024LSS-13 with higher continuous drain current ratings (8.4A and 8.5A respectively) while maintaining lower on-resistance values. FDS8884 offers gate charge characteristics comparable to the primary part (13nC vs. 12.9nC), making it suitable for direct substitution in switching applications. FDS6612A provides the lowest gate charge (7.6nC) among all substitutes, offering improved switching efficiency.

For Legacy or Existing Design Support:

IRF7403TRPBF and STS10N3LH5 are classified as Not For New Designs but remain available for existing applications. IRF7403TRPBF maintains the 8-SO package format identical to the primary part. STS10N3LH5 offers the highest continuous drain current (10A) and lowest on-resistance (21mOhm) with minimal gate charge (4.6nC), providing superior thermal and switching performance for demanding applications.

Compliance Considerations:

All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) ratings where specified. FDS8884, IRF7403TRPBF, and STS10N3LH5 carry full ROHS3 certification. All parts are REACH Unaffected and classified under ECCN EAR99.

Frequently Asked Questions (FAQ)

Q: Can FDS6612A directly replace DMN3024LSS-13 in existing PCB layouts?

A: Yes. Both parts use identical 8-SOIC package dimensions (0.154", 3.90mm width) with compatible pinouts for N-Channel MOSFETs. PCB footprints are interchangeable.

Q: What is the primary advantage of FDS8884 over the original DMN3024LSS-13?

A: FDS8884 provides 32% higher continuous drain current (8.5A vs. 6.4A) and 56% higher power dissipation capability (2.5W vs. 1.6W) while maintaining equivalent on-resistance and gate charge characteristics. This enables operation at higher current levels or improved thermal margin in existing designs.

Q: Why is IRF7403TRPBF marked as "Not For New Designs"?

A: IRF7403TRPBF carries a legacy product status designation. While electrically compatible and currently in stock, Infineon Technologies does not recommend this part for new design implementations. Active alternatives (FDS6612A, FDS8884) are preferred for new applications.

Q: How does STS10N3LH5 differ in gate charge performance?

A: STS10N3LH5 exhibits the lowest gate charge (4.6nC @ 5V) among all substitutes, resulting in faster switching transitions and reduced gate drive power requirements. This characteristic is beneficial in high-frequency switching applications or when minimizing driver current consumption is critical.

Q: Are all substitute parts available in Tape & Reel packaging?

A: FDS8884 is specified as Tape & Reel (TR). FDS6612A packaging is not specified in available data. IRF7403TRPBF and STS10N3LH5 are available in Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel® formats respectively. Verify packaging availability with your supplier for production requirements.

Q: What is the maximum gate voltage for each substitute part?

A: DMN3024LSS-13, FDS6612A, FDS8884, and IRF7403TRPBF all support ±20V maximum gate voltage. STS10N3LH5 supports ±22V maximum gate voltage, providing 10% additional gate voltage margin.

Q: Can these parts be used interchangeably in high-temperature applications?

A: Yes. All parts maintain identical operating temperature ranges (-55°C to 150°C junction temperature). Thermal performance differences exist due to varying power dissipation ratings and on-resistance values, but temperature range compatibility is universal across all listed substitutes.