DMN3018SSS-13 Equivalent & Substitute Parts

Part Overview

The DMN3018SSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 7.3A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is compliant with RoHS3 and REACH standards. The part is currently in active production status with 17,588 units in stock.

Substitute parts are necessary when the primary part becomes unavailable, when design requirements demand higher current ratings or improved thermal performance, or when alternative manufacturers' components offer superior electrical characteristics within the same package footprint and voltage class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7.3	A (Ta)
On-Resistance (Rds On) @ 10A, 10V	21	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.1	V
Gate Charge (Qg) @ 10V	13.2	nC
Input Capacitance (Ciss) @ 15V	697	pF
Power Dissipation (Max)	1.4	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution eligibility for the DMN3018SSS-13 is determined by the following criteria:

Mandatory Compatibility Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Type: Must be 8-SOIC or 8-SO surface mount configuration with 0.154" (3.90mm) width
FET Type: Must be N-Channel MOSFET technology
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Mounting Type: Must be surface mount

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): Substitute must meet or exceed 7.3A at 25°C
On-Resistance (Rds On): Lower or equal values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be within acceptable gate drive voltage compatibility
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed

All four substitute parts meet the mandatory compatibility parameters and provide equal or superior electrical performance characteristics.

Parameter Comparison

Parameter	DMN3018SSS-13	FDS6612A	IRF7403TRPBF	SI4178DY-T1-GE3	STS10N3LH5
Manufacturer	Diodes Incorporated	Fairchild Semiconductor	Infineon Technologies	Vishay Siliconix	STMicroelectronics
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	7.3 (Ta)	8.4 (Ta)	8.5 (Ta)	12 (Tc)	10 (Tc)
Rds On @ 10V (mOhm)	21 @ 10A	22 @ 8.4A	22 @ 4A	21 @ 8.4A	21 @ 5A
Vgs(th) @ 250µA (V)	2.1	3	1	2.8	1
Qg @ 10V (nC)	13.2	7.6 @ 5V	57	12	4.6 @ 5V
Ciss @ 15V (pF)	697	560	1200	405	475
Power Dissipation (W)	1.4 (Ta)	2.5 (Ta)	2.5 (Ta)	2.4 (Ta) / 5 (Tc)	2.5 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Active	Active	Not For New Designs	Active	Not For New Designs
RoHS3 Compliant	Yes	Not specified	Yes	Yes	Yes
Inventory (Pcs)	17,588	67,600	7,155	65,200	15,265

Engineering Selection Recommendations

FDS6612A (Fairchild Semiconductor)

The FDS6612A is an active production part offering 8.4A continuous drain current with 22mOhm on-resistance. This substitute provides improved current handling over the primary part while maintaining identical voltage rating and package configuration. The lower gate charge (7.6nC) and input capacitance (560pF) support faster switching characteristics. Inventory availability is high at 67,600 units. RoHS3 compliance status is not specified in available documentation.

IRF7403TRPBF (Infineon Technologies)

The IRF7403TRPBF is designated "Not For New Designs" and should be used only for legacy system maintenance or replacement applications. This part delivers 8.5A continuous drain current with 22mOhm on-resistance. The significantly higher gate charge (57nC) and input capacitance (1200pF) result in slower switching performance compared to the primary part. RoHS3 compliance and REACH status are confirmed. Inventory is limited at 7,155 units.

SI4178DY-T1-GE3 (Vishay Siliconix)

The SI4178DY-T1-GE3 is an active production part rated for 12A continuous drain current (measured at case temperature), representing the highest current capability among all substitutes. On-resistance is 21mOhm, matching the primary part specification. Gate charge (12nC) and input capacitance (405pF) are among the lowest, enabling superior switching performance. This part supports higher power dissipation (5W at Tc) and is suitable for thermally demanding applications. RoHS3 compliance is confirmed. Inventory availability is excellent at 65,200 units.

STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 is designated "Not For New Designs" and is appropriate only for legacy system support. This part provides 10A continuous drain current with 21mOhm on-resistance. The lowest gate charge (4.6nC) and low input capacitance (475pF) deliver the fastest switching characteristics among all options. RoHS3 compliance and REACH status are confirmed. Inventory is moderate at 15,265 units.

Recommendation for New Designs:

For new product designs, select either the FDS6612A or SI4178DY-T1-GE3. The SI4178DY-T1-GE3 is preferred when higher current capacity and thermal performance are required. The FDS6612A is suitable for applications where the primary part's current rating is adequate and cost optimization is a priority.

Frequently Asked Questions (FAQ)

Q: Can the IRF7403TRPBF or STS10N3LH5 be used in new designs?

A: Both parts carry "Not For New Designs" status. These parts are restricted to replacement and legacy system applications only. For new product development, use FDS6612A or SI4178DY-T1-GE3.

Q: What is the difference between Ta and Tc temperature measurements for current rating?

A: Ta (ambient temperature) ratings assume measurement at 25°C ambient conditions. Tc (case temperature) ratings are measured at the device case and typically allow higher current specifications due to direct thermal measurement. The SI4178DY-T1-GE3 and STS10N3LH5 use Tc ratings, while DMN3018SSS-13 and FDS6612A use Ta ratings. Direct current comparison requires accounting for the measurement methodology.

Q: Are all substitute parts RoHS3 compliant?

A: DMN3018SSS-13, IRF7403TRPBF, SI4178DY-T1-GE3, and STS10N3LH5 are confirmed RoHS3 compliant. FDS6612A RoHS3 compliance status is not specified in the provided data.

Q: Which substitute has the lowest switching losses?

A: The STS10N3LH5 has the lowest gate charge (4.6nC) and SI4178DY-T1-GE3 has the lowest input capacitance (405pF). Both characteristics reduce switching losses. The STS10N3LH5 is optimal for high-frequency switching applications, while SI4178DY-T1-GE3 offers balanced performance across switching and conduction losses.

Q: Can these parts be used interchangeably without PCB modification?

A: Yes. All substitute parts use identical 8-SOIC package configuration with 0.154" (3.90mm) width. Direct footprint compatibility is confirmed. No PCB layout changes are required for mechanical placement.

Q: What is the maximum gate voltage for each part?

A: DMN3018SSS-13 and SI4178DY-T1-GE3 support ±25V gate voltage. FDS6612A, IRF7403TRPBF, and STS10N3LH5 support ±20V, ±20V, and ±22V respectively. Verify gate drive circuit compliance with the selected part's maximum rating.

Q: Which substitute offers the best thermal performance?

A: The SI4178DY-T1-GE3 supports the highest power dissipation at 5W (Tc), compared to 2.5W for FDS6612A, IRF7403TRPBF, and STS10N3LH5, and 1.4W for the primary part. This makes SI4178DY-T1-GE3 suitable for high-power applications.

Q: Are there inventory concerns with any substitute?

A: IRF7403TRPBF has the lowest inventory at 7,155 units. SI4178DY-T1-GE3 and FDS6612A have excellent availability at 65,200 and 67,600 units respectively. For long-term supply security, prioritize SI4178DY-T1-GE3 or FDS6612A.

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