DMN3018SFGQ-13 Equivalent & Substitute Parts

Part Overview

The DMN3018SFGQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 8.5A continuous drain current at 25°C. This device is housed in a PowerDI3333-8 surface mount package and is qualified to AEC-Q101 automotive standards. The part is currently in active production status with 3400 units in stock.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter set. Alternative models may be required due to inventory availability, supply chain considerations, or design revision requirements while maintaining functional equivalence in the target application.

Substiute Parts

DMN3018SFGQ-13

Diodes IncorporatedIn Stock: 3434DMN3018SFGQ-13 Datasheet

Current PartRFQ

DMN3018SFG-13

Diodes IncorporatedIn Stock: 23511DMN3018SFG-13 Datasheet

Parametric EquivalentRFQ

DMN3018SFG-7

Diodes IncorporatedIn Stock: 20733DMN3018SFG-7 Datasheet

Parametric EquivalentRFQ

DMN3018SFGQ-7

Diodes IncorporatedIn Stock: 113342DMN3018SFGQ-7 Datasheet

Parametric EquivalentRFQ

AON7410

Alpha & Omega Semiconductor Inc.In Stock: 250151AON7410 Datasheet

MFR RecommendedRFQ

RQ3E080GNTB

Rohm SemiconductorIn Stock: 23390RQ3E080GNTB Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility is determined by matching the following critical electrical and mechanical parameters:

Electrical Matching Criteria:

• Drain to Source Voltage (Vdss): 30V minimum
• Continuous Drain Current (Id) @ 25°C: 8.5A minimum
• On-Resistance (Rds On): Performance within specified range
• Gate Threshold Voltage (Vgs(th)): Compatible threshold characteristics
• Operating Temperature Range: -55°C to 150°C minimum

Mechanical Matching Criteria:

• Package Type: 8-PowerVDFN or equivalent surface mount footprint
• Mounting Type: Surface Mount
• Compliance: ROHS3 Compliant, MSL 1 (Unlimited)

Substitute Categories:

Category 1: Direct Parametric Equivalents (Diodes Incorporated) Parts DMN3018SFG-13, DMN3018SFG-7, and DMN3018SFGQ-7 share identical electrical specifications with the main part. These variants differ only in packaging designation or qualification level while maintaining the same die performance characteristics.

Category 2: Manufacturer Recommended Alternatives Parts AON7410 (Alpha & Omega Semiconductor) and RQ3E080GNTB (Rohm Semiconductor) provide functional equivalence with variations in current rating, power dissipation capability, and gate charge characteristics. These parts maintain the 30V Vdss rating and support the required drain current range.

Parameter Comparison

Engineering Selection Recommendations

For Automotive Applications (AEC-Q101 Required): The DMN3018SFGQ-13 and DMN3018SFGQ-7 maintain AEC-Q101 automotive qualification. Both parts are active production devices with identical electrical specifications. DMN3018SFGQ-7 offers significantly higher inventory availability (113,300 units) compared to the main part (3,400 units), making it the preferred substitute when supply continuity is a consideration.

For General Industrial Applications: DMN3018SFG-13 and DMN3018SFG-7 provide equivalent electrical performance without automotive qualification. These Diodes Incorporated variants maintain the same die specifications and are suitable for non-automotive applications requiring the specified electrical characteristics.

For Enhanced Thermal Performance: AON7410 provides higher power dissipation capability (3.1W at Ta, 20W at Tc) compared to the main part (1W at Ta). This device is marked "Not For New Designs" and should be used only when existing designs require substitution. The higher current rating (9.5A at Ta, 24A at Tc) and improved thermal characteristics make it suitable for applications requiring enhanced thermal headroom, though package footprint differences (8-DFN-EP vs. 8-PowerVDFN) require PCB layout verification.

For Optimized Gate Charge Characteristics: RQ3E080GNTB (Rohm Semiconductor) features significantly lower gate charge (5.8 nC vs. 13.2 nC) and input capacitance (295 pF vs. 697 pF), resulting in faster switching characteristics. This device is active production status and maintains the 30V Vdss rating with 8A continuous drain current. The 8-HSMT package footprint differs from the main part and requires PCB layout evaluation.

Compliance and Regulatory: All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can DMN3018SFG-13 be used as a direct replacement for DMN3018SFGQ-13?

A: DMN3018SFG-13 provides identical electrical specifications and operates within the same temperature range. The primary difference is the absence of AEC-Q101 automotive qualification. For non-automotive applications, this part is a direct functional equivalent. For automotive applications requiring AEC-Q101 certification, use DMN3018SFGQ-7 instead.

Q: What is the difference between DMN3018SFGQ-7 and DMN3018SFGQ-13?

A: Both parts are AEC-Q101 qualified N-Channel MOSFETs with identical electrical specifications (30V Vdss, 8.5A Id, 21mOhm Rds On). The suffix designates different tape reel configurations or manufacturing date codes. Electrical performance and package footprint are equivalent. DMN3018SFGQ-7 has substantially higher inventory availability.

Q: Is AON7410 a suitable substitute for the DMN3018SFGQ-13?

A: AON7410 meets the core electrical requirements (30V Vdss, 9.5A Id at Ta) and maintains the operating temperature range. However, three factors require evaluation: (1) Product status is "Not For New Designs," limiting its use to existing design revisions; (2) Package footprint differs (8-DFN-EP vs. 8-PowerVDFN), requiring PCB layout verification; (3) Higher power dissipation capability (3.1W vs. 1W) may affect thermal design. Use only when thermal performance enhancement is required and PCB layout can accommodate the different package.

Q: Can RQ3E080GNTB replace DMN3018SFGQ-13 in a high-speed switching application?

A: RQ3E080GNTB is suitable for applications prioritizing switching speed due to significantly lower gate charge (5.8 nC vs. 13.2 nC) and input capacitance (295 pF vs. 697 pF). The device maintains 30V Vdss and 8A continuous drain current. The 8-HSMT package footprint differs from the main part and requires PCB layout verification before implementation.

Q: What are the package footprint differences between substitute parts?

A: The main part and Diodes Incorporated substitutes (DMN3018SFG-13, DMN3018SFG-7, DMN3018SFGQ-7) use the 8-PowerVDFN package. AON7410 uses 8-DFN-EP (3x3), and RQ3E080GNTB uses 8-HSMT (3.2x3). While all are 8-pin surface mount packages, physical dimensions and pad layouts differ. PCB layout modifications are required when switching between package types.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing processes and storage requirements.

Q: Which substitute part offers the best inventory availability?

A: AON7410 has the highest inventory (250,100 units), followed by DMN3018SFGQ-7 (113,300 units). However, AON7410 is marked "Not For New Designs." For active production designs, DMN3018SFGQ-7 provides the best availability among qualified alternatives.

Q: What is the minimum drain current rating required for substitution?

A: The main part is rated for 8.5A continuous drain current at 25°C. Substitute parts must support at least this current level. AON7410 exceeds this requirement (9.5A at Ta), while RQ3E080GNTB meets it at 8A (Ta). Both are acceptable for applications requiring 8.5A operation.