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DMN3012LFG-13 Equivalent & Substitute Parts
Part Overview
The DMN3012LFG-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage and 20A continuous drain current in a surface mount PowerDI3333-8 package. This device is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating package form factor variations.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 20 | A |
| Configuration | 2 N-Channel | — |
| Power Dissipation (Max) | 2.2 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | 8-PowerLDFN | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the DMN3012LFG-13 is determined by the following critical parameters:
Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating of 30V or greater to ensure safe operation within the original design envelope.
Current Handling: Substitute parts must support a minimum continuous drain current (Id) of 20A at 25°C. Parts with higher current ratings (25A, 40A) are acceptable as they provide design margin and thermal headroom.
Configuration: The dual N-channel (2 N-Channel) configuration must be preserved to maintain circuit topology and gate drive requirements.
Package Form Factor: All substitute parts utilize the 8-PowerLDFN package family, ensuring mechanical and electrical compatibility with existing PCB layouts, though specific LSON dimensions may vary (3.3x3.3 or 5x6).
Regulatory Compliance: All substitute parts maintain ROHS3 compliance and MSL 1 rating, ensuring compatibility with standard manufacturing and storage protocols.
Temperature Range: All substitute parts support the -55°C to 150°C operating range, maintaining thermal performance across the original specification.
Parameter Comparison
| Parameter | DMN3012LFG-13 (Main) | CSD87330Q3D | CSD87352Q5D | CSD87350Q5D |
|---|---|---|---|---|
| Manufacturer | Diodes Incorporated | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Status | Obsolete | Active | Active | Active |
| Drain to Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
| Continuous Drain Current (Id) @ 25°C | 20A | 20A | 25A | 40A |
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Half Bridge) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Power Dissipation (Max) | 2.2W | 6W | 8.5W | 12W |
| Operating Temperature Range | -55 to 150°C (TJ) | -55 to 150°C (TJ) | -55 to 150°C (TJ) | -55 to 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-PowerLDFN | 8-PowerLDFN | 8-PowerLDFN | 8-PowerLDFN |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA, 1.15V @ 250µA | 2.1V @ 250µA | 1.15V @ 250µA | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 4.5V, 12.6nC @ 4.5V | 5.8nC @ 4.5V | 12.5nC @ 4.5V | 10.9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 15V, 1480pF @ 15V | 900pF @ 15V | 1800pF @ 15V | 1770pF @ 15V |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Affected | REACH Unaffected |
Engineering Selection Recommendations
CSD87330Q3D (Texas Instruments NexFET™ Series): This substitute provides electrical equivalence at the 20A current rating with identical 30V Vdss specification. Active product status ensures long-term availability and supply chain continuity. The device maintains ROHS3 compliance and MSL 1 rating. Enhanced power dissipation (6W versus 2.2W) provides thermal margin. Gate charge of 5.8nC is lower than the main part, reducing gate drive power requirements. This part is recommended for direct replacement in applications where the 20A current specification is the primary design constraint.
CSD87352Q5D (Texas Instruments NexFET™ Series): This substitute exceeds the main part specification with 25A continuous drain current while maintaining 30V Vdss. Active product status and ROHS3 compliance are confirmed. Power dissipation of 8.5W provides significant thermal headroom. Gate charge of 12.5nC matches the upper threshold of the main part specification. Note: REACH Status is listed as Affected, requiring verification of regulatory requirements for specific end-use applications. This part is suitable for applications requiring enhanced current capacity and thermal performance.
CSD87350Q5D (Texas Instruments NexFET™ Series): This substitute provides the highest current rating at 40A continuous drain current with maintained 30V Vdss specification. Active product status and ROHS3 compliance are confirmed. Power dissipation of 12W offers maximum thermal margin. REACH Status is Unaffected. This part is appropriate for applications requiring significant design margin or where future current scaling is anticipated.
All three substitute parts maintain the 8-PowerLDFN package family and -55°C to 150°C operating temperature range, ensuring compatibility with existing thermal management and PCB design considerations.
Frequently Asked Questions (FAQ)
Q: Can the CSD87330Q3D be used as a direct replacement for the DMN3012LFG-13?
A: Yes. The CSD87330Q3D maintains electrical equivalence at the critical parameters: 30V Vdss, 20A continuous drain current, dual N-channel configuration, and 8-PowerLDFN package family. Active product status ensures supply availability. Gate charge and input capacitance values are within acceptable ranges for gate drive circuit compatibility.
Q: What is the difference between the CSD87330Q3D and CSD87352Q5D?
A: The primary difference is continuous drain current rating: CSD87330Q3D is rated for 20A, while CSD87352Q5D is rated for 25A. Both maintain 30V Vdss and dual N-channel configuration. CSD87352Q5D provides higher power dissipation (8.5W versus 6W) and higher gate charge (12.5nC versus 5.8nC). CSD87352Q5D has REACH Status listed as Affected, requiring regulatory verification for specific applications.
Q: Are the package dimensions identical across all substitute parts?
A: All parts use the 8-PowerLDFN package family. However, specific LSON dimensions vary: CSD87330Q3D uses 3.3x3.3 mm, while CSD87352Q5D and CSD87350Q5D use 5x6 mm. PCB layout modifications may be required for the larger footprint variants. Verify PCB design constraints before selection.
Q: Which substitute part should be selected for maximum design margin?
A: The CSD87350Q5D provides the highest design margin with 40A continuous drain current and 12W power dissipation, compared to the original 20A and 2.2W specification. This part is suitable for applications where thermal headroom and current capacity scaling are design priorities.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All three substitute parts (CSD87330Q3D, CSD87352Q5D, CSD87350Q5D) are ROHS3 compliant and maintain MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols.
Q: What is the significance of the REACH Status difference for CSD87352Q5D?
A: CSD87352Q5D is listed with REACH Status as Affected, while the other substitutes and the main part are REACH Unaffected. This designation requires verification of regulatory compliance for specific end-use applications, particularly in European markets. Consult regulatory documentation for your application before final part selection.
Q: Can gate drive circuits designed for the DMN3012LFG-13 be used with all substitute parts?
A: Gate drive compatibility depends on gate charge and threshold voltage specifications. CSD87330Q3D has lower gate charge (5.8nC) than the main part, reducing gate drive power requirements. CSD87352Q5D and CSD87350Q5D have higher gate charge values (12.5nC and 10.9nC respectively), which may require gate drive circuit verification. Threshold voltage values are within acceptable ranges across all parts.
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