DMN3010LSS-13 Equivalent & Substitute Parts

Part Overview

The DMN3010LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage and 16A continuous drain current in an 8-SOP surface mount package. This device is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity (MSL 1).

Substitute parts are necessary when the primary device becomes unavailable, when alternative manufacturers are required for supply chain diversification, or when design requirements permit operation within the electrical and mechanical parameter ranges of equivalent devices. The substitutes listed maintain compatibility with the 30V voltage class and similar current handling capabilities while accommodating minor variations in on-resistance, gate charge, and thermal characteristics.

Substiute Parts

DMN3010LSS-13
Diodes IncorporatedIn Stock: 15555DMN3010LSS-13 Datasheet
DMN3010LSS-13
Current Part
AO4492
Alpha & Omega Semiconductor Inc.In Stock: 5264AO4492 Datasheet
AO4492
MFR Recommended
BSO040N03MSGXUMA1
Infineon TechnologiesIn Stock: 3239BSO040N03MSGXUMA1 Datasheet
BSO040N03MSGXUMA1
MFR Recommended
FDS4470
Fairchild SemiconductorIn Stock: 25117FDS4470 Datasheet
FDS4470
MFR Recommended
FDS6680A
onsemiIn Stock: 50440FDS6680A Datasheet
FDS6680A
MFR Recommended
FDS8447
onsemiIn Stock: 22969FDS8447 Datasheet
FDS8447
MFR Recommended
FDS8880
onsemiIn Stock: 38174FDS8880 Datasheet
FDS8880
MFR Recommended
IRF7821TRPBF
Infineon TechnologiesIn Stock: 31373IRF7821TRPBF Datasheet
IRF7821TRPBF
MFR Recommended
IRF8714TRPBF
Infineon TechnologiesIn Stock: 24342IRF8714TRPBF Datasheet
IRF8714TRPBF
MFR Recommended
SI4174DY-T1-GE3
Vishay SiliconixIn Stock: 17640SI4174DY-T1-GE3 Datasheet
SI4174DY-T1-GE3
MFR Recommended
SI4686DY-T1-E3
Vishay SiliconixIn Stock: 24285SI4686DY-T1-E3 Datasheet
SI4686DY-T1-E3
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 16 A
On-Resistance (Rds On) @ 16A, 10V 9 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2 V
Gate Charge (Qg) @ 10V 43.7 nC
Input Capacitance (Ciss) @ 15V 2096 pF
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C
Package Type 8-SOP / 8-SOIC
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for the DMN3010LSS-13 is determined by the following criteria:

Primary Electrical Parameters:

  • Drain-to-Source Voltage (Vdss): Must be 30V or greater
  • Continuous Drain Current (Id): Must support 16A or greater at 25°C
  • Gate-Source Voltage (Vgs): Must accommodate ±20V maximum rating
  • Operating Temperature Range: Must span -55°C to 150°C minimum

Secondary Electrical Parameters:

  • On-Resistance (Rds On): Acceptable range 8.7 to 10.5 mOhm @ 10V gate drive
  • Gate Charge (Qg): Acceptable range 12 to 73 nC @ 10V
  • Input Capacitance (Ciss): Acceptable range 770 to 5700 pF @ 15V

Mechanical & Packaging Parameters:

  • Package: 8-SOIC (0.154", 3.90mm Width) or equivalent 8-pin surface mount
  • Mounting Type: Surface Mount
  • RoHS Compliance: ROHS3 compliant required

Compliance & Status:

  • RoHS3 Compliance: Required
  • REACH Status: REACH Unaffected or REACH info available upon request
  • Product Status: Active or Not For New Designs (acceptable for existing designs)

Substitute parts may vary in current rating (12.5A to 18.2A), gate charge characteristics, and thermal performance while maintaining the 30V voltage class and surface mount 8-SOIC package footprint.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On @ 10V (mOhm) Vgs(th) @ 250µA (V) Qg @ 10V (nC) Ciss @ 15V (pF) Power Dissipation (W) Temp Range (°C) Product Status Package
DMN3010LSS-13 Diodes Inc. 30 16 9 2 43.7 2096 2.5 -55 to 150 Active 8-SOP
AO4492 Alpha & Omega 30 14 9.5 2.2 18 770 3.1 -55 to 150 Obsolete 8-SOIC
BSO040N03MSGXUMA1 Infineon 30 16 4 2 73 5700 1.56 -55 to 150 Not For New Designs PG-DSO-8
FDS4470 Fairchild 40 12.5 9 5 63 2659 2.5 -55 to 175 Active 8-SOIC
FDS6680A onsemi 30 12.5 9.5 3 23 1620 2.5 -55 to 150 Active 8-SOIC
FDS8447 onsemi 40 12.8 10.5 3 49 2600 2.5 -55 to 150 Active 8-SOIC
FDS8880 onsemi 30 11.6 10 2.5 30 1235 2.5 -55 to 150 Active 8-SOIC
IRF7821TRPBF Infineon 30 13.6 9.1 1 14 1010 2.5 -55 to 155 Active 8-SO
IRF8714TRPBF Infineon 30 14 8.7 2.35 12 1020 2.5 -55 to 150 Active 8-SO
SI4174DY-T1-GE3 Vishay 30 17 9.5 2.2 27 985 2.5 -55 to 150 Active 8-SOIC
SI4686DY-T1-E3 Vishay 30 18.2 9.5 3 26 1220 3 -55 to 150 Active 8-SOIC

Engineering Selection Recommendations

Tier 1 - Direct Substitutes (Active Status, 30V Class, 16A+ Current):

SI4174DY-T1-GE3 and SI4686DY-T1-E3 from Vishay Siliconix are the primary substitutes. Both devices maintain the 30V voltage rating, exceed the 16A current requirement (17A and 18.2A respectively), and carry Active product status. Both are RoHS3 compliant with MSL 1 rating. SI4174DY-T1-GE3 provides the closest electrical match with 9.5 mOhm on-resistance. SI4686DY-T1-E3 offers higher current capability (18.2A) with slightly elevated power dissipation (3W vs. 2.5W).

IRF8714TRPBF from Infineon (HEXFET® series) is an Active substitute rated for 30V and 14A continuous current. It features the lowest on-resistance (8.7 mOhm) among all substitutes and the lowest gate charge (12 nC), resulting in superior switching performance. Operating temperature extends to 150°C. Package is 8-SO, mechanically compatible with 8-SOIC footprint.

Tier 2 - Acceptable Substitutes (Active Status, 30V Class, 12.5A+ Current):

FDS6680A from onsemi (PowerTrench® series) is rated for 30V and 12.5A continuous current. It is Active status, RoHS3 compliant, and maintains the 2.5W power dissipation specification. On-resistance is 9.5 mOhm. This device is suitable for applications where the full 16A capability is not required.

IRF7821TRPBF from Infineon (HEXFET® series) is rated for 30V and 13.6A continuous current. It is Active status with excellent gate charge characteristics (14 nC @ 4.5V) and low on-resistance (9.1 mOhm). Operating temperature extends to 155°C.

Tier 3 - Limited Substitutes (40V Class or Reduced Current):

FDS4470 from Fairchild (PowerTrench® series) is rated for 40V and 12.5A. While it exceeds the voltage requirement, it provides reduced current capability. It is Active status and extends operating temperature to 175°C. This device is suitable only when 40V rating is required or when 12.5A current is acceptable.

FDS8447 from onsemi (PowerTrench® series) is rated for 40V and 12.8A. It is Active status but exceeds the voltage specification. Suitable only for 40V applications.

FDS8880 from onsemi (PowerTrench® series) is rated for 30V and 11.6A. It is Active status but provides reduced current capability below the 16A requirement.

Tier 4 - Legacy Substitutes (Not For New Designs or Obsolete):

BSO040N03MSGXUMA1 from Infineon (OptiMOS™ series) is rated for 30V and 16A but carries "Not For New Designs" status. It features the lowest on-resistance (4 mOhm) and highest power dissipation (1.56W). MSL rating is 3 (168 hours), requiring controlled storage. This device is acceptable only for replacement in existing designs.

AO4492 from Alpha & Omega is rated for 30V and 14A but carries Obsolete product status. It is not recommended for new designs or long-term supply assurance.

Compliance Summary:

All recommended substitutes are RoHS3 compliant and REACH unaffected or REACH information available. All maintain the 8-SOIC (0.154", 3.90mm Width) package footprint or mechanically equivalent 8-SO package. All support ±20V gate-source voltage rating.

Frequently Asked Questions (FAQ)

Q: Can I use a 40V rated MOSFET as a substitute for the 30V DMN3010LSS-13?

A: Yes. A 40V rated device (such as FDS4470 or FDS8447) is electrically compatible with a 30V application. The higher voltage rating provides additional safety margin. However, verify that current rating meets application requirements, as some 40V devices in this list are rated for 12.5A to 12.8A, below the 16A specification of the DMN3010LSS-13.

Q: What is the difference between 8-SOP and 8-SOIC packaging?

A: Both are 8-pin surface mount packages with 0.154" (3.90mm) width. The primary difference is pin pitch and body profile. Devices in 8-SOP and 8-SOIC packages are mechanically interchangeable on standard PCB layouts designed for 8-pin SOIC footprints. Verify PCB footprint compatibility before substitution.

Q: Why do some substitutes have lower current ratings (12.5A to 14A) than the original 16A?

A: Lower current ratings reflect different die designs and thermal characteristics. Substitutes with 12.5A to 14A ratings are acceptable only if the application circuit does not require the full 16A capability. For applications requiring 16A or higher, select SI4174DY-T1-GE3 (17A), SI4686DY-T1-E3 (18.2A), or BSO040N03MSGXUMA1 (16A).

Q: What does "Not For New Designs" product status mean?

A: "Not For New Designs" indicates that the manufacturer no longer recommends the device for new circuit designs but continues to support existing applications. BSO040N03MSGXUMA1 carries this status. It is acceptable for replacement in existing designs but should not be selected for new product development due to potential future discontinuation.

Q: How do I determine if on-resistance (Rds On) differences are significant?

A: On-resistance directly affects power dissipation and heat generation. The DMN3010LSS-13 specifies 9 mOhm @ 16A, 10V. Substitutes range from 4 mOhm (BSO040N03MSGXUMA1) to 10.5 mOhm (FDS8447). At 16A continuous current, a 1 mOhm difference results in approximately 0.256W additional power dissipation. For thermal-sensitive applications, select devices with on-resistance ≤ 9.5 mOhm.

Q: What is gate charge (Qg) and why does it vary among substitutes?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Lower gate charge (12 nC to 18 nC) enables faster switching with lower gate drive power. Higher gate charge (43.7 nC to 73 nC) requires more gate drive energy but may provide better noise immunity. For high-frequency switching applications, select devices with gate charge ≤ 30 nC.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance certification. All are suitable for applications requiring RoHS3 compliance.

Q: What is MSL (Moisture Sensitivity Level) and why does it matter?

A: MSL indicates the maximum time a component can be exposed to ambient conditions (typically 30°C, 85% relative humidity) before requiring baking. MSL 1 (unlimited) means no time restriction. MSL 3 (168 hours) requires baking after 168 hours of exposure. The DMN3010LSS-13 and most substitutes are MSL 1. BSO040N03MSGXUMA1 is MSL 3, requiring controlled storage and handling.

Q: Can I substitute a device with higher power dissipation rating?

A: Yes. A device with higher power dissipation rating (such as SI4686DY-T1-E3 at 3W or 5.2W Tc vs. 2.5W) is acceptable. Higher power dissipation rating indicates improved thermal performance. Verify that the PCB thermal design can accommodate the actual power dissipation of the substitute device in your application.

Q: What is the significance of operating temperature range differences?

A: The DMN3010LSS-13 operates from -55°C to 150°C. Most substitutes match this range. FDS4470 extends to 175°C, providing additional margin for high-temperature applications. IRF7821TRPBF extends to 155°C. For applications operating near 150°C, select devices with equal or higher maximum temperature rating.

Q: How do I verify that a substitute is mechanically compatible?

A: Verify that the substitute device uses the same package type (8-SOIC or equivalent 8-SO) with 0.154" (3.90mm) width. All listed substitutes meet this requirement. Confirm that your PCB footprint accommodates the pin pitch and body dimensions of the substitute device. Consult the substitute device datasheet for detailed package dimensions.

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