DMN3008SFG-13 Equivalent & Substitute Parts

Part Overview

The DMN3008SFG-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 17.6A continuous drain current at 25°C. This device is housed in a Surface Mount PowerDI3333-8 package and is designed for power switching applications requiring compact form factors and efficient thermal management. The part is Active in product status and ROHS3 compliant.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or when higher performance specifications are required while maintaining functional compatibility within the application circuit.

Substiute Parts

DMN3008SFG-13

Diodes IncorporatedIn Stock: 2963DMN3008SFG-13 Datasheet

Current PartRFQ

DMN3008SFG-7

Diodes IncorporatedIn Stock: 101378DMN3008SFG-7 Datasheet

Parametric EquivalentRFQ

IRFH8324TRPBF

Infineon TechnologiesIn Stock: 150525IRFH8324TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMN3008SFG-13 are classified into two categories based on parametric equivalence and manufacturer recommendation:

Parametric Equivalent (Same Electrical Specifications): The DMN3008SFG-7 shares identical electrical characteristics with the main part, including Vdss (30V), Id (17.6A), Rds On (4.6mOhm @ 13.5A, 10V), Vgs(th) (2.3V), and Gate Charge (86nC). Both devices use the same PowerDI3333-8 package and are manufactured by Diodes Incorporated. This substitute is suitable for direct replacement in applications where the original part number is unavailable.

Manufacturer Recommended Equivalent (Enhanced Performance): The IRFH8324TRPBF, manufactured by Infineon Technologies, is a higher-performance alternative that exceeds the minimum specifications of the DMN3008SFG-13. This device maintains the same 30V Vdss rating and operating temperature range but provides increased continuous drain current (23A Ta / 90A Tc), improved Rds On (4.1mOhm @ 20A, 10V), and significantly higher power dissipation capability (3.6W Ta / 54W Tc). The IRFH8324TRPBF uses a different package format (8-PowerTDFN PQFN 5x6) and is suitable for applications requiring enhanced thermal performance or higher current handling.

Substitution eligibility is determined by matching the following critical parameters: Drain-to-Source Voltage (Vdss), Gate-Source Voltage (Vgs Max), Operating Temperature Range, and RoHS/REACH compliance status.

Parameter Comparison

Engineering Selection Recommendations

Direct Replacement (Same Specifications): The DMN3008SFG-7 is a direct parametric equivalent to the DMN3008SFG-13. Both devices are manufactured by Diodes Incorporated, share identical electrical specifications, and use the same 8-PowerVDFN package. Selection of DMN3008SFG-7 is appropriate when the original part number is unavailable and inventory of the substitute is available. Both parts maintain ROHS3 compliance and REACH Unaffected status, ensuring regulatory compatibility in all applications where the DMN3008SFG-13 is specified.

Enhanced Performance Alternative: The IRFH8324TRPBF from Infineon Technologies is suitable for applications requiring higher current handling or improved thermal performance. This device exceeds the minimum specifications of the DMN3008SFG-13 across multiple parameters: continuous drain current increases from 17.6A to 23A (Ta) or 90A (Tc), power dissipation capability increases from 900mW to 3.6W (Ta) or 54W (Tc), and gate charge decreases from 86nC to 31nC, resulting in faster switching characteristics. The IRFH8324TRPBF uses a different package format (8-PowerTDFN PQFN 5x6) and requires PCB layout modifications. This substitute is recommended only when the application circuit can accommodate the alternative package footprint and when enhanced performance specifications provide design margin benefits.

All three parts maintain identical Vdss (30V), Vgs Max (±20V), and operating temperature range (-55°C to 150°C), ensuring functional compatibility in voltage and thermal environments. All parts are ROHS3 compliant and REACH Unaffected, meeting regulatory requirements for industrial and commercial applications.

Frequently Asked Questions (FAQ)

Q: Can the DMN3008SFG-7 be used as a direct replacement for the DMN3008SFG-13?

A: Yes. The DMN3008SFG-7 is a parametric equivalent with identical electrical specifications, including Vdss (30V), continuous drain current (17.6A), Rds On (4.6mOhm), and gate charge (86nC). Both devices use the same 8-PowerVDFN package and are manufactured by Diodes Incorporated. No circuit modifications are required for substitution.

Q: What are the key differences between the DMN3008SFG-13 and the IRFH8324TRPBF?

A: The IRFH8324TRPBF provides enhanced performance specifications: higher continuous drain current (23A Ta vs. 17.6A), significantly higher power dissipation (3.6W Ta vs. 900mW), lower gate charge (31nC vs. 86nC), and lower input capacitance (2380pF vs. 3690pF). However, the IRFH8324TRPBF uses a different package format (8-PowerTDFN PQFN 5x6 vs. 8-PowerVDFN), requiring PCB layout changes. Both devices maintain the same 30V Vdss rating and operating temperature range.

Q: Is the IRFH8324TRPBF suitable for all applications where the DMN3008SFG-13 is used?

A: The IRFH8324TRPBF is electrically compatible in terms of voltage ratings (30V Vdss) and operating temperature range (-55°C to 150°C). However, the different package footprint (PQFN 5x6 vs. PowerVDFN) requires PCB redesign. The IRFH8324TRPBF is recommended for applications where enhanced current handling, reduced gate charge, or improved thermal performance provides design benefits that justify layout modifications.

Q: Are all three parts RoHS and REACH compliant?

A: Yes. The DMN3008SFG-13, DMN3008SFG-7, and IRFH8324TRPBF are all ROHS3 compliant and REACH Unaffected. All parts have Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.

Q: What is the significance of the lower gate charge in the IRFH8324TRPBF?

A: The IRFH8324TRPBF has a gate charge of 31nC compared to 86nC in the DMN3008SFG-13. Lower gate charge results in faster switching transitions, reduced gate drive power requirements, and improved switching efficiency. This characteristic is beneficial in high-frequency switching applications or when gate drive circuits have limited current capacity.

Q: Can the DMN3008SFG-13 and DMN3008SFG-7 be used interchangeably on the same PCB?

A: Yes. Both devices use the identical 8-PowerVDFN package and have the same pinout. They can be used interchangeably on the same PCB without any modifications to the circuit board layout or schematic.

Q: What packaging formats are available for these parts?

A: The DMN3008SFG-13 and DMN3008SFG-7 are supplied in Tape & Reel (TR) packaging. The IRFH8324TRPBF is supplied in Cut Tape (CT) and Digi-Reel® packaging formats. Packaging selection depends on production volume and assembly equipment compatibility.