DMN2310U-13 Equivalent & Substitute Parts Reference

Part Overview

The DMN2310U-13, manufactured by Diodes Incorporated, is an N-Channel MOSFET designed for surface-mount applications. It features a drain-to-source voltage of 20 V, a continuous drain current of 1.6A, and a maximum power dissipation of 480mW in the SOT-23-3 package. The device operates across a temperature range of -55°C to 150°C and supports low gate threshold voltages, making it suitable for low-voltage control applications. As the component is currently active and compliant with RoHS3 and REACH, alternative models are typically sought for supply chain risk mitigation and maximizing design flexibility.

Substiute Parts

DMN2310U-13
Diodes IncorporatedIn Stock: 780DMN2310U-13 Datasheet
DMN2310U-13
Current Part
DMN2310U-7
Diodes IncorporatedIn Stock: 15752DMN2310U-7 Datasheet
DMN2310U-7
Parametric Equivalent

Key Parameters

ParameterValue
ManufacturerDiodes Incorporated
Part NumberDMN2310U-13
CategoryTransistors, FETs, MOSFETs
PackagingTape & Reel (TR)
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Continuous Drain Current (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs175mOhm @ 300mA, 4.5V
Gate Threshold Voltage (Vgs(th)) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds38 pF @ 10 V
Power Dissipation (Max)480mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected

Substitute Part Grouping Explanation

Substitution for the DMN2310U-13 is determined by identical or matching values across critical electrical and mechanical parameters. The following key parameters are required for strict substitution within the Transistors, FETs, MOSFETs category:

  • FET Type
  • Technology
  • Drain to Source Voltage (Vdss)
  • Continuous Drain Current (Id) @ 25°C
  • Drive Voltage (Max Rds On, Min Rds On)
  • Rds On (Max) @ Id, Vgs
  • Gate Threshold Voltage (Vgs(th)) (Max) @ Id
  • Gate Charge (Qg) (Max) @ Vgs
  • Vgs (Max)
  • Input Capacitance (Ciss) (Max) @ Vds
  • Power Dissipation (Max)
  • Operating Temperature
  • Mounting Type
  • Supplier Device Package
  • Package / Case
  • RoHS Status
  • REACH Status

Parts included in the substitute list are matched strictly on these parameters for guaranteed interchangeability.

Parameter Comparison

Parameter DMN2310U-13 DMN2310U-7
ManufacturerDiodes IncorporatedDiodes Incorporated
CategoryTransistors, FETs, MOSFETsTransistors, FETs, MOSFETs
FET TypeN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V20 V
Continuous Drain Current (Id) @ 25°C1.6A (Ta)1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs175mOhm @ 300mA, 4.5V175mOhm @ 300mA, 4.5V
Gate Threshold Voltage (Vgs(th)) (Max) @ Id950mV @ 250µA950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V0.7 nC @ 4.5 V
Vgs (Max)±8V±8V
Input Capacitance (Ciss) (Max) @ Vds38 pF @ 10 V38 pF @ 10 V
Power Dissipation (Max)480mW (Ta)480mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface Mount
Supplier Device PackageSOT-23-3SOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
RoHS StatusROHS3 CompliantROHS3 Compliant
REACH StatusREACH UnaffectedREACH Unaffected

Engineering Selection Recommendations

Both DMN2310U-13 and DMN2310U-7 are designated as active products and are RoHS3 compliant and REACH unaffected, with a supplier device package of SOT-23-3. Either option meets required directives and regulatory standards for typical electronics manufacturing environments. Selection between these parts can be based on inventory availability and identical compliant status.

Frequently Asked Questions (FAQ)

Q: What criteria are used to determine if DMN2310U-7 is a substitute for DMN2310U-13? A: Substitution is determined strictly by matching key electrical, mechanical, and compliance parameters including FET type, technology, voltage ratings, current ratings, Rds On, gate threshold voltage, package/case, and RoHS/REACH status.

Q: Are there any differences in package or mounting type between DMN2310U-13 and DMN2310U-7? A: Both DMN2310U-13 and DMN2310U-7 utilize the SOT-23-3 supplier device package and support surface mount configurations, allowing direct interchangeability in compatible PCB footprints.

Q: Is RoHS or REACH compliance different for the substitute? A: Both DMN2310U-13 and DMN2310U-7 are RoHS3 compliant and REACH unaffected, supporting consistent use in environments requiring these certifications.

Q: Can DMN2310U-7 be used in place of DMN2310U-13 without modification? A: Based solely on the provided parameters, DMN2310U-7 matches all substitute criteria and is suitable for use in place of DMN2310U-13 across all listed attributes.

Q: How should the choice between these MOSFETs be made? A: Engineering selection should be confined to product status, compliance, inventory levels, and identical parametric values as detailed in the comparison table.

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