DMN2215UDM-7 Equivalent & Substitute Parts

Part Overview

The DMN2215UDM-7 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in logic-level gate switching circuits. This device integrates two N-channel MOSFETs in a compact SOT-26 package, rated for 20V drain-to-source voltage and 2A continuous drain current at 25°C.

The DMN2215UDM-7 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET configuration.

Substiute Parts

DMN2215UDM-7

Diodes IncorporatedIn Stock: 4165DMN2215UDM-7 Datasheet

Current PartRFQ

FDC6305N

onsemiIn Stock: 105125FDC6305N Datasheet

MFR RecommendedRFQ

SI3900DV-T1-E3

Vishay SiliconixIn Stock: 4387SI3900DV-T1-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMN2215UDM-7 are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

• Configuration: 2 N-Channel (Dual) MOSFET array
• Drain to Source Voltage (Vdss): 20V minimum
• Continuous Drain Current (Id): 2A or greater at 25°C
• Operating Temperature Range: -55°C to 150°C (TJ)
• Mounting Type: Surface Mount
• Package Type: SOT-23-6 or equivalent form factor
• RoHS3 Compliance: Required
• MSL Rating: 1 (Unlimited)

Acceptable Parameter Variations:

• Rds On (Max): Equal to or lower than 100mOhm (lower values indicate improved performance)
• Power Dissipation (Max): Equal to or greater than 650mW
• Vgs(th) (Max): Up to 1.5V @ 250µA (logic-level gate operation maintained)
• Gate Charge and Input Capacitance: Variations acceptable within normal manufacturing tolerances

The substitute parts FDC6305N and SI3900DV-T1-E3 meet all critical parameters and are classified as active products with current manufacturing status.

Parameter Comparison

Engineering Selection Recommendations

FDC6305N (onsemi PowerTrench® Series)

The FDC6305N is an active product with superior electrical performance characteristics. It provides 2.7A continuous drain current, exceeding the 2A requirement of the DMN2215UDM-7. The Rds On specification of 80mOhm at 2.7A, 4.5V represents a 20% improvement over the original part. Power dissipation capability is rated at 700mW, providing adequate thermal margin. This part is manufactured in the SuperSOT™-6 package, which is mechanically and electrically compatible with SOT-23-6 form factors. ROHS3 compliance and MSL 1 rating are maintained. Current inventory availability is 105,100 units.

SI3900DV-T1-E3 (Vishay Siliconix TrenchFET® Series)

The SI3900DV-T1-E3 is an active product with matched drain current specification of 2A at 25°C, directly equivalent to the original part. The Rds On specification of 125mOhm at 2.4A, 4.5V is within acceptable tolerance. Power dissipation capability is rated at 830mW, providing enhanced thermal performance. This part features logic-level gate operation, consistent with the DMN2215UDM-7 design intent. The 6-TSOP package is mechanically and electrically compatible with SOT-23-6 form factors. ROHS3 compliance and MSL 1 rating are maintained. Current inventory availability is 4,331 units.

Both substitute parts satisfy all critical electrical and mechanical parameters, maintain regulatory compliance, and are available from active manufacturing sources.

Frequently Asked Questions (FAQ)

Q: Can the FDC6305N be used as a direct replacement for the DMN2215UDM-7?

A: Yes. The FDC6305N meets all critical electrical parameters: 20V Vdss, 2.7A continuous drain current (exceeds 2A requirement), compatible SOT-23-6 package form factor, -55°C to 150°C operating temperature range, ROHS3 compliance, and MSL 1 rating. The improved Rds On specification of 80mOhm provides enhanced performance.

Q: Can the SI3900DV-T1-E3 be used as a direct replacement for the DMN2215UDM-7?

A: Yes. The SI3900DV-T1-E3 meets all critical electrical parameters: 20V Vdss, 2A continuous drain current (matched specification), compatible SOT-23-6 package form factor, -55°C to 150°C operating temperature range, ROHS3 compliance, and MSL 1 rating. Logic-level gate operation is maintained.

Q: What is the difference between the SuperSOT™-6 package (FDC6305N) and the 6-TSOP package (SI3900DV-T1-E3)?

A: Both packages are mechanically and electrically compatible with the SOT-23-6 form factor. SuperSOT™-6 is an onsemi proprietary designation for a thin-profile SOT-23-6 variant. 6-TSOP is a Vishay designation for a thin-profile SOT-23-6 variant. Pin configurations and PCB footprints are identical to standard SOT-23-6 specifications.

Q: Are there any thermal performance differences between the substitute parts?

A: The FDC6305N is rated at 700mW maximum power dissipation, while the SI3900DV-T1-E3 is rated at 830mW. Both exceed the original 650mW specification. The SI3900DV-T1-E3 provides additional thermal margin. Actual thermal performance depends on PCB design, copper area, and thermal management implementation.

Q: Do the substitute parts maintain logic-level gate operation?

A: The SI3900DV-T1-E3 explicitly features logic-level gate operation with Vgs(th) of 1.5V @ 250µA. The FDC6305N has Vgs(th) of 1.5V @ 250µA, which is within the logic-level gate threshold range. Both parts are suitable for logic-level gate switching applications.

Q: What is the inventory status of these substitute parts?

A: FDC6305N: 105,100 units in stock. SI3900DV-T1-E3: 4,331 units in stock. Both parts are available from active manufacturing sources with current production status.

Q: Are all parts ROHS3 compliant?

A: Yes. The DMN2215UDM-7, FDC6305N, and SI3900DV-T1-E3 are all ROHS3 compliant. All parts maintain MSL 1 (Unlimited) moisture sensitivity rating.