DMN2075UDW-7 Equivalent & Substitute Parts

Part Overview

The DMN2075UDW-7 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 20V drain-to-source voltage with 2.8A continuous drain current at 25°C. The device is packaged in SOT-363 (6-TSSOP) surface mount configuration and dissipates a maximum of 500mW. This part is classified as "Not For New Designs," indicating it has been superseded or is in end-of-life status. Identifying equivalent and substitute parts is necessary for design continuity, inventory management, and sourcing alternatives that meet the same electrical and mechanical requirements.

Substiute Parts

DMN2075UDW-7
Diodes IncorporatedIn Stock: 3790DMN2075UDW-7 Datasheet
DMN2075UDW-7
Current Part
DMN2056U-7
Diodes IncorporatedIn Stock: 505444DMN2056U-7 Datasheet
DMN2056U-7
MFR Recommended
NTJS3157NT1G
onsemiIn Stock: 1647NTJS3157NT1G Datasheet
NTJS3157NT1G
MFR Recommended
NVJS4405NT1G
onsemiIn Stock: 15354NVJS4405NT1G Datasheet
NVJS4405NT1G
MFR Recommended
TR3C475M025C0525
Vishay SpragueIn Stock: 1198TR3C475M025C0525 Datasheet
TR3C475M025C0525
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) @ 25°C 2.8 A
On-Resistance (Rds On Max) @ 3A, 4.5V 48 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 1 V
Gate Charge (Qg Max) @ 4.5V 7 nC
Power Dissipation (Max) 500 mW
Operating Temperature Range -55 to 150 °C (TJ)
Package Type SOT-363 (6-TSSOP)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DMN2075UDW-7 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must be equal to or greater than 20V
  • Continuous Drain Current (Id) must meet or exceed 2.8A at 25°C
  • Gate Threshold Voltage (Vgs(th)) must be compatible with 1V @ 250µA specification
  • Maximum Gate Voltage (Vgs Max) must be ±8V or greater
  • Operating temperature range must span -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

  • Package must be SOT-363 (6-TSSOP) or equivalent pinout-compatible surface mount package
  • Mounting type must be surface mount
  • RoHS3 compliance and MSL 1 rating required

Substitute Parts Identified:

  1. DMN2056U-7 (Diodes Incorporated) — Direct manufacturer alternative with higher current rating (4A) and improved thermal performance (940mW), different package (SOT-23-3)
  2. NTJS3157NT1G (onsemi) — Same package family (SOT-363), higher current rating (3.2A), higher power dissipation (1W)
  3. NVJS4405NT1G (onsemi) — Same package family (SOT-363), lower current rating (1A), higher voltage rating (25V), automotive qualified

Non-MOSFET Substitute:

  • TR3C475M025C0525 (Vishay Sprague) — Tantalum capacitor; included in original substitute list but not functionally equivalent to the MOSFET

Parameter Comparison

Parameter DMN2075UDW-7 DMN2056U-7 NTJS3157NT1G NVJS4405NT1G
Manufacturer Diodes Inc. Diodes Inc. onsemi onsemi
FET Type N-Channel N-Channel N-Channel N-Channel
Vdss (V) 20 20 20 25
Id @ 25°C (A) 2.8 4 3.2 1
Rds On Max (mOhm) 48 @ 3A, 4.5V 38 @ 3.6A, 4.5V 60 @ 4A, 4.5V 350 @ 600mA, 4.5V
Vgs(th) Max @ 250µA (V) 1 1 1 1.5
Qg Max @ 4.5V (nC) 7 4.3 15 1.5
Power Dissipation Max (mW) 500 940 1000 630
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package SOT-363 SOT-23-3 SOT-363 SOT-363
Product Status Not For New Designs Active Active Active
RoHS3 Compliant Yes Yes Yes Yes
MSL Rating 1 1 1 1

Engineering Selection Recommendations

DMN2056U-7 (Diodes Incorporated)

This part is the manufacturer-recommended substitute from Diodes Incorporated. It exceeds the electrical requirements of the DMN2075UDW-7 with a higher continuous drain current (4A versus 2.8A) and improved power dissipation capability (940mW versus 500mW). The part maintains the same 20V Vdss rating, identical gate threshold voltage, and lower on-resistance (38mOhm versus 48mOhm). Product status is Active, ensuring long-term availability. The primary design consideration is the package change from SOT-363 to SOT-23-3, which requires PCB layout modification. RoHS3 compliance and MSL 1 rating are maintained.

NTJS3157NT1G (onsemi)

This part provides a direct package-compatible alternative in SOT-363, eliminating PCB redesign requirements. It delivers 3.2A continuous drain current and 1W power dissipation, both exceeding the original specification. The 20V Vdss rating matches the DMN2075UDW-7. On-resistance is slightly higher (60mOhm versus 48mOhm), and gate charge is elevated (15nC versus 7nC), which may impact switching speed in high-frequency applications. Product status is Active. RoHS3 compliance and MSL 1 rating are maintained.

NVJS4405NT1G (onsemi)

This part is suitable only for applications where the lower continuous drain current (1A) is acceptable. It provides a higher voltage rating (25V versus 20V), which offers additional design margin in voltage-stressed circuits. The significantly higher on-resistance (350mOhm versus 48mOhm) makes this part unsuitable for high-current or low-loss applications. This part carries automotive qualification (AEC-Q101), making it appropriate for automotive applications. Product status is Active. RoHS3 compliance and MSL 1 rating are maintained.

Frequently Asked Questions (FAQ)

Q: Can the DMN2056U-7 be used as a direct replacement for the DMN2075UDW-7?

A: The DMN2056U-7 is electrically compatible and exceeds all electrical specifications of the DMN2075UDW-7. However, the package differs (SOT-23-3 versus SOT-363), requiring PCB layout modification. Pin configuration must be verified before implementation.

Q: Why is the NTJS3157NT1G listed as a substitute if it has higher gate charge?

A: The NTJS3157NT1G meets all minimum electrical requirements and maintains the same SOT-363 package, eliminating PCB redesign. The higher gate charge (15nC versus 7nC) increases switching losses in high-frequency applications but does not prevent substitution in standard switching applications. Circuit performance must be validated for frequency-dependent designs.

Q: Is the NVJS4405NT1G suitable for all applications using the DMN2075UDW-7?

A: No. The NVJS4405NT1G is rated for only 1A continuous drain current, compared to the 2.8A requirement of the DMN2075UDW-7. This part is suitable only for applications requiring less than 1A. The significantly higher on-resistance (350mOhm) also makes it unsuitable for low-loss switching applications.

Q: What is the impact of switching from SOT-363 to SOT-23-3 package?

A: The SOT-23-3 package is larger than SOT-363, requiring PCB layout modification. Thermal performance may improve due to larger package size and better heat dissipation. Pin spacing and footprint are different; existing PCB designs cannot accommodate this package without redesign.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (DMN2056U-7, NTJS3157NT1G, and NVJS4405NT1G) are RoHS3 compliant with MSL 1 rating, matching the compliance profile of the DMN2075UDW-7.

Q: Why is TR3C475M025C0525 listed as a substitute?

A: The TR3C475M025C0525 is a tantalum capacitor and is not functionally equivalent to the DMN2075UDW-7 MOSFET. This part should not be used as a substitute for the transistor function. It may have been included in the original substitute list due to data entry or application context not provided in this reference.

Q: What is the significance of "Not For New Designs" status?

A: The DMN2075UDW-7 is classified as "Not For New Designs," indicating the manufacturer has superseded this part or is discontinuing it. New designs should use one of the active substitute parts (DMN2056U-7, NTJS3157NT1G, or NVJS4405NT1G) to ensure long-term availability and support.

Q: Can I use the NTJS3157NT1G in a design originally specified for the DMN2075UDW-7 without circuit modification?

A: The NTJS3157NT1G is pin-compatible in the SOT-363 package and meets all electrical specifications. No circuit modification is required for basic switching functionality. However, the higher gate charge may affect switching speed in high-frequency circuits, requiring performance validation.

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