DMN2040LTS-13 Equivalent & Substitute Parts

Part Overview

The DMN2040LTS-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in automotive-grade environments. This device integrates two N-channel MOSFETs in a common drain configuration within an 8-TSSOP package. The part is currently active in production with AEC-Q101 automotive qualification and ROHS3 compliance.

Equivalent and substitute parts are identified when alternative components meet or exceed the electrical and mechanical specifications of the primary device, enabling design flexibility, supply chain alternatives, and inventory optimization without compromising circuit performance or reliability requirements.

Substiute Parts

DMN2040LTS-13

Diodes IncorporatedIn Stock: 15152DMN2040LTS-13 Datasheet

Current PartRFQ

SI6968BEDQ-T1-GE3

Vishay SiliconixIn Stock: 2611SI6968BEDQ-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMN2040LTS-13 is determined by equivalence across the following critical parameters:

Electrical Compatibility Requirements:

• Drain to Source Voltage (Vdss) must equal or exceed 20V
• Continuous Drain Current (Id) must equal or exceed 6.7A at 25°C
• On-Resistance (Rds On) must not exceed 26mOhm at specified gate and drain conditions
• Gate Threshold Voltage (Vgs(th)) must be compatible with 1.2V maximum specification
• Maximum Power Dissipation must support 890mW or greater
• Operating Temperature Range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

• Package type must be 8-TSSOP with identical pinout and footprint (0.173", 4.40mm width)
• Configuration must be 2 N-Channel (Dual) Common Drain
• Surface mount technology required

Compliance Requirements:

• ROHS3 compliance mandatory
• Automotive-grade qualification (AEC-Q101) required for direct substitution in automotive applications
• Moisture Sensitivity Level (MSL) 1 or equivalent

The SI6968BEDQ-T1-GE3 meets these substitution criteria with equivalent or superior electrical performance and identical mechanical compatibility.

Parameter Comparison

Engineering Selection Recommendations

Primary Part: DMN2040LTS-13

The DMN2040LTS-13 remains the preferred selection for applications requiring the specified 6.7A continuous drain current rating. This part is actively produced, carries AEC-Q101 automotive qualification, and maintains ROHS3 compliance. Current inventory of 15,100 units supports immediate availability for production requirements.

Substitute Part: SI6968BEDQ-T1-GE3

The SI6968BEDQ-T1-GE3 serves as a functional equivalent for applications where the continuous drain current requirement does not exceed 5.2A. This Vishay device offers superior on-resistance performance (22mOhm versus 26mOhm) and higher maximum power dissipation (1W versus 890mW), resulting in reduced thermal dissipation in current-limited applications. The substitute maintains identical package geometry, operating temperature range, and compliance certifications.

Critical Substitution Considerations:

1. Drain Current Derating: The SI6968BEDQ-T1-GE3 is rated for 5.2A continuous drain current, representing an 22% reduction from the primary part's 6.7A rating. Circuit designs operating above 5.2A drain current require the DMN2040LTS-13.

2. Gate Threshold Voltage Shift: The substitute exhibits a higher gate threshold voltage (1.6V versus 1.2V). Gate drive circuits must supply sufficient voltage margin to ensure reliable device switching at the application's operating conditions.

3. Gate Charge Increase: The substitute requires 18nC gate charge compared to 5.2nC for the primary part, representing a 3.5× increase. Gate driver circuits must provide adequate current sourcing capability to meet switching frequency and timing requirements.

4. Compliance Equivalence: Both devices maintain AEC-Q101 automotive qualification, ROHS3 compliance, and MSL 1 moisture sensitivity rating, enabling direct substitution in automotive-grade applications without additional qualification.

Frequently Asked Questions (FAQ)

Q: Can the SI6968BEDQ-T1-GE3 replace the DMN2040LTS-13 in all applications?

A: The SI6968BEDQ-T1-GE3 is suitable for applications where the continuous drain current does not exceed 5.2A. Applications requiring the full 6.7A rating of the DMN2040LTS-13 must use the primary part. Both devices share identical package geometry and operating temperature range, enabling mechanical and thermal compatibility in all 8-TSSOP footprints.

Q: What are the implications of the higher gate threshold voltage in the substitute part?

A: The SI6968BEDQ-T1-GE3 specifies a maximum gate threshold voltage of 1.6V compared to 1.2V for the DMN2040LTS-13. Gate drive circuits must supply sufficient voltage above this threshold to achieve the specified on-resistance performance. Low-voltage gate drive systems operating near 3.3V or 5V logic levels remain compatible, but designs with marginal gate drive voltage must be evaluated for adequate switching margin.

Q: Does the increased gate charge of the substitute part affect circuit performance?

A: The SI6968BEDQ-T1-GE3 requires 18nC gate charge versus 5.2nC for the primary part. This 3.5× increase directly impacts gate driver current requirements and switching speed. High-frequency switching applications must ensure the gate driver circuit provides sufficient current sourcing capability to meet the application's switching frequency and rise/fall time specifications. Low-frequency applications experience minimal impact.

Q: Are both parts qualified for automotive applications?

A: Both the DMN2040LTS-13 and SI6968BEDQ-T1-GE3 carry AEC-Q101 automotive qualification and ROHS3 compliance. Direct substitution is permissible in automotive-grade designs without additional qualification, provided the electrical performance requirements (particularly drain current rating) are satisfied.

Q: What packaging differences exist between these parts?

A: Both devices are supplied in 8-TSSOP surface mount packages with identical footprint dimensions (0.173", 4.40mm width). The primary part is supplied in Tape & Reel (TR) packaging, while the substitute is available in Cut Tape (CT) and Digi-Reel® formats. Packaging format does not affect electrical or mechanical compatibility; selection depends on assembly process requirements and inventory management practices.

Q: How do the on-resistance specifications compare?

A: The SI6968BEDQ-T1-GE3 specifies 22mOhm on-resistance at 6.5A and 4.5V gate voltage, compared to 26mOhm for the DMN2040LTS-13 at 6A and 4.5V gate voltage. The substitute exhibits superior on-resistance performance, resulting in lower power dissipation and reduced thermal management requirements in current-limited applications.

Q: Can these parts be used interchangeably in existing designs?

A: Interchangeability depends on the application's drain current requirement. If the design operates at or below 5.2A continuous drain current, the SI6968BEDQ-T1-GE3 provides equivalent or superior performance. Designs requiring the full 6.7A rating must retain the DMN2040LTS-13. Gate drive circuit evaluation is required to confirm adequate voltage margin above the 1.6V threshold of the substitute part.