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DMN2011UFDF-7 Equivalent & Substitute Parts
Part Overview
The DMN2011UFDF-7 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 20V drain-to-source voltage with a continuous drain current of 14.2A at 25°C. This device is housed in a 6-UDFN Exposed Pad surface mount package and is designed for applications requiring efficient switching and power management in compact form factors. The part is currently in active production status with 6200 units in stock. Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Manufacturer Part Number | DMN2011UFDF-7 | — |
| Manufacturer | Diodes Incorporated | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 20 | V |
| Continuous Drain Current (Id) @ 25°C | 14.2 | A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5 | mOhm @ 7A, 4.5V |
| Gate Threshold Voltage (Vgs(th)) @ Id | 1 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 56 | nC @ 10V |
| Power Dissipation (Max) | 2.1 | W (Ta) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | 6-UDFN Exposed Pad | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitute parts for the DMN2011UFDF-7 are identified based on electrical and mechanical compatibility within the N-Channel MOSFET category. The primary substitution criteria are:
Parametric Equivalents share identical or functionally equivalent electrical specifications:
- Drain-to-source voltage rating (Vdss): 20V
- Continuous drain current (Id): 14.2A or higher
- On-state resistance (Rds On): 9.5mOhm or lower
- Gate charge (Qg): 56nC or lower
- Operating temperature range: -55°C to 150°C
- Surface mount package configuration
- RoHS3 compliance and MSL 1 rating
Functional Substitutes maintain the same voltage and current ratings but may exhibit variations in secondary parameters such as gate charge, input capacitance, or power dissipation, provided they remain within acceptable operating margins for the intended application.
Package compatibility is maintained across all substitutes at the 6-UDFN Exposed Pad level, ensuring PCB layout and thermal management characteristics remain consistent.
Parameter Comparison
| Parameter | DMN2011UFDF-7 | DMN2011UFDF-13 | PMPB8XNX |
|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Nexperia USA Inc. |
| FET Type | N-Channel | N-Channel | N-Channel |
| Vdss (V) | 20 | 20 | 20 |
| Id @ 25°C (A) | 14.2 | 14.2 | 10.1 |
| Rds On (Max) (mOhm) | 9.5 @ 7A, 4.5V | 9.5 @ 7A, 4.5V | 12 @ 10.1A, 4.5V |
| Vgs(th) (Max) (V) | 1 @ 250µA | 1 @ 250µA | 0.9 @ 250µA |
| Qg (Max) (nC) | 56 @ 10V | 56 @ 10V | 30 @ 4.5V |
| Ciss (Max) (pF) | 2248 @ 10V | 2248 @ 10V | 1696 @ 10V |
| Power Dissipation (Max) | 2.1W (Ta) | 2.1W (Ta) | 1.9W (Ta), 12.5W (Tc) |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
DMN2011UFDF-13 is a parametric equivalent to the DMN2011UFDF-7. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications across all critical parameters including Vdss, Id, Rds On, Vgs(th), and Qg. Both devices are in active production status, RoHS3 compliant, and carry MSL 1 rating. This part is suitable for direct substitution with no design modifications required. Current inventory of 10354 units exceeds that of the primary part.
PMPB8XNX is a functional substitute manufactured by Nexperia USA Inc. This device maintains the 20V Vdss rating and operates within the same temperature range. However, the continuous drain current is rated at 10.1A, which is lower than the 14.2A specification of the primary part. The on-state resistance is 12mOhm compared to 9.5mOhm, and gate charge is reduced to 30nC. This part is suitable for applications where the lower current rating and higher Rds On are acceptable. The device is RoHS3 compliant and carries MSL 1 rating. The PMPB8XNX offers reduced gate charge and input capacitance, which may provide switching speed advantages in certain circuit topologies.
All substitute parts maintain surface mount configuration and 6-UDFN Exposed Pad package compatibility, ensuring mechanical and thermal interface consistency with the primary design.
Frequently Asked Questions (FAQ)
Q: Can DMN2011UFDF-13 be used as a direct replacement for DMN2011UFDF-7?
A: Yes. The DMN2011UFDF-13 is a parametric equivalent with identical electrical specifications. No circuit modifications are required for substitution.
Q: What are the limitations of using PMPB8XNX as a substitute?
A: The PMPB8XNX has a lower continuous drain current rating of 10.1A versus 14.2A for the primary part. Applications requiring the full 14.2A rating cannot use this substitute. The on-state resistance is also higher at 12mOhm. Verify that your application current requirements do not exceed 10.1A before selecting this part.
Q: Are all substitute parts in the same package?
A: Yes. All listed substitutes use the 6-UDFN Exposed Pad surface mount package, ensuring PCB layout and thermal management compatibility.
Q: Do all parts meet the same compliance standards?
A: Yes. The DMN2011UFDF-7, DMN2011UFDF-13, and PMPB8XNX are all RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating.
Q: What is the difference between the two Diodes Incorporated parts?
A: The DMN2011UFDF-7 and DMN2011UFDF-13 are electrically identical. The difference is in the manufacturing date code or lot designation, indicated by the suffix (-7 versus -13). Both parts are suitable for direct substitution.
Q: How does gate charge affect circuit performance?
A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The PMPB8XNX has a lower gate charge of 30nC compared to 56nC for the primary part, resulting in faster switching transitions and reduced driver power consumption. This may be advantageous in high-frequency switching applications.
Q: Can PMPB8XNX be used in applications designed for 14.2A continuous current?
A: No. The PMPB8XNX is rated for 10.1A continuous drain current. Using this part in a 14.2A application would exceed its current rating and cause thermal stress and potential device failure.
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