DMN2009UFDF-13 Equivalent & Substitute Parts

Part Overview

The DMN2009UFDF-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, designed for surface mount applications in the 6-UDFN Exposed Pad package. This device operates at a drain-to-source voltage (Vdss) of 20 V with a continuous drain current rating of 12.8 A at 25°C and maximum power dissipation of 1.3 W. The part is classified as Active and complies with ROHS3 and REACH Unaffected standards. Substitute parts are identified when equivalent electrical and mechanical parameters are maintained across the same package type and performance envelope, ensuring direct functional replacement without circuit redesign.

Substiute Parts

DMN2009UFDF-13

Diodes IncorporatedIn Stock: 913DMN2009UFDF-13 Datasheet

Current PartRFQ

DMN2009UFDF-7

Diodes IncorporatedIn Stock: 4324DMN2009UFDF-7 Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMN2009UFDF-13 are identified based on strict electrical and mechanical parameter equivalence. The substitution criteria are defined by the following parameters:

Critical Matching Parameters:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Continuous Drain Current (Id) @ 25°C: 12.8 A (Ta)
• On-Resistance (Rds On Max): 9 mOhm @ 8.5A, 4.5V
• Gate Threshold Voltage (Vgs(th) Max): 1.4 V @ 250µA
• Gate Charge (Qg Max): 27.9 nC @ 10 V
• Input Capacitance (Ciss Max): 1083 pF @ 10 V
• Maximum Gate Voltage (Vgs Max): ±12 V
• Power Dissipation (Max): 1.3 W (Ta)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Package Type: 6-UDFN Exposed Pad (U-DFN2020-6 Type F)
• Mounting Type: Surface Mount
• Compliance: ROHS3 Compliant, REACH Unaffected

Parts meeting all these parameters are classified as parametric equivalents and direct substitutes. Inventory availability and part status are secondary considerations that do not affect substitution eligibility.

Parameter Comparison

Engineering Selection Recommendations

The DMN2009UFDF-7 is a direct parametric equivalent to the DMN2009UFDF-13. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications, package configuration, and compliance certifications. Selection between these parts is based on availability and supply chain requirements rather than technical performance differences.

Both parts are classified as Active and maintain ROHS3 Compliance and REACH Unaffected status, ensuring regulatory compliance in applications requiring environmental and hazardous substance restrictions. The identical thermal and electrical characteristics ensure interchangeability in circuit applications without modification to PCB layout, thermal management, or gate drive circuitry.

Frequently Asked Questions (FAQ)

Q: Can the DMN2009UFDF-7 be used as a direct replacement for the DMN2009UFDF-13?

A: Yes. The DMN2009UFDF-7 is a parametric equivalent with identical electrical specifications, on-resistance characteristics, gate charge, and thermal ratings. Both parts use the same 6-UDFN Exposed Pad package and are suitable for direct substitution without circuit redesign.

Q: Are there differences in package dimensions between these parts?

A: No. Both the DMN2009UFDF-13 and DMN2009UFDF-7 use the U-DFN2020-6 (Type F) package designation, which specifies the 6-UDFN Exposed Pad configuration. PCB footprints and reflow profiles are identical.

Q: Do these parts have the same thermal performance?

A: Yes. Both parts have a maximum power dissipation rating of 1.3 W (Ta) and operate across the same temperature range of -55°C to 150°C (TJ). Thermal management requirements are equivalent.

Q: What is the significance of the part number suffix (-13 versus -7)?

A: The suffix indicates different manufacturing date codes or tape/reel configurations. The electrical and mechanical specifications remain identical across all suffix variants of the DMN2009UFDF series.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the DMN2009UFDF-13 and DMN2009UFDF-7 are ROHS3 Compliant and REACH Unaffected, meeting regulatory requirements for restricted substances and hazardous material declarations.

Q: What is the gate drive voltage requirement for these MOSFETs?

A: Both parts support gate drive voltages up to ±12 V maximum. The gate threshold voltage is 1.4 V maximum at 250 µA, and optimal on-resistance performance is achieved at 4.5 V gate drive.

Q: Can these parts be used in high-frequency switching applications?

A: Yes. The gate charge specification of 27.9 nC at 10 V and input capacitance of 1083 pF at 10 V support high-frequency operation. The low on-resistance of 9 mOhm at 8.5 A and 4.5 V minimizes switching losses.