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DMN2009LSS-13 Equivalent & Substitute Parts
Part Overview
The DMN2009LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 20V drain-to-source voltage with 12A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and is classified as Active product status. The part is ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.
Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained within the specified parameter ranges for this MOSFET category. Alternatives may be required due to inventory availability, packaging format preferences, or specific application performance requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 20 | V |
| Continuous Drain Current (Id) @ 25°C | 12 | A |
| Rds On (Max) @ 12A, 10V | 8 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 1.2 | V |
| Power Dissipation (Max) | 2 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | 8-SOIC | Surface Mount |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution eligibility for the DMN2009LSS-13 is determined by the following critical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss) must equal or exceed 20V
- Continuous Drain Current (Id) must meet or exceed 12A at 25°C
- Rds On (Max) performance must support equivalent or superior on-state resistance characteristics
- Gate Threshold Voltage (Vgs(th)) must fall within compatible operating ranges
- Power Dissipation (Max) must support thermal requirements
Mechanical Compatibility Criteria:
- Package type must be 8-SOIC surface mount configuration
- Pin pitch and physical dimensions must match 0.154" (3.90mm) width specification
- Mounting type must be Surface Mount
Compliance Criteria:
- RoHS3 compliance required
- Operating temperature range -55°C to 150°C (TJ) required
The identified substitute parts maintain these core parameters while offering variations in packaging format (Cut Tape vs. Tape & Reel), gate charge characteristics, and input capacitance specifications.
Parameter Comparison
| Parameter | DMN2009LSS-13 | DMN2009USS-13 | SI4408DY-T1-E3 |
|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Vishay Siliconix |
| FET Type | N-Channel | N-Channel | N-Channel |
| Vdss (V) | 20 | 20 | 20 |
| Id @ 25°C (A) | 12 | 12.1 | 14 |
| Rds On (Max) @ 10V (mOhm) | 8 @ 12A | 8 @ 12A | 4.5 @ 21A |
| Vgs(th) (Max) @ 250µA (V) | 1.2 | 1.2 | 1.0 (Min) |
| Gate Charge (Qg) @ 10V (nC) | 58.3 | 34 | 32 @ 4.5V |
| Input Capacitance (Ciss) @ 10V (pF) | 2555 | 1706 | Not specified |
| Power Dissipation (Max) (W) | 2 | 1.4 | 1.6 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | 8-SOIC | 8-SOIC | 8-SOIC |
| Packaging Format | Cut Tape (CT) & Digi-Reel® | Tape & Reel (TR) | Tape & Reel (TR) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 3 (168 Hours) | 1 (Unlimited) |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
DMN2009USS-13 (Diodes Incorporated)
This substitute maintains identical electrical specifications to the DMN2009LSS-13 with 20V Vdss, 12.1A continuous drain current, and 8mOhm Rds On. Both parts share the same base product number (DMN2009) and are manufactured by Diodes Incorporated. The primary difference is packaging format: DMN2009USS-13 is supplied in Tape & Reel (TR) format versus Cut Tape (CT) & Digi-Reel® for the main part. Both devices are ROHS3 compliant and Active status. The DMN2009USS-13 exhibits lower gate charge (34 nC vs. 58.3 nC) and reduced input capacitance (1706 pF vs. 2555 pF), which may provide switching performance benefits in certain applications. Moisture sensitivity differs at MSL 3 (168 Hours) versus MSL 1 (Unlimited) for the main part.
SI4408DY-T1-E3 (Vishay Siliconix)
This substitute exceeds the electrical specifications of the DMN2009LSS-13 with 14A continuous drain current (versus 12A) and superior Rds On performance of 4.5mOhm at 21A. The device maintains 20V Vdss rating and operates across the same temperature range (-55°C to 150°C). The SI4408DY-T1-E3 is part of the TrenchFET® series and offers lower gate charge (32 nC) and reduced switching losses. Both devices are ROHS3 compliant and Active status. The SI4408DY-T1-E3 is supplied in Tape & Reel (TR) format with MSL 1 (Unlimited) moisture sensitivity. This part provides enhanced current handling and reduced on-state losses compared to the main part.
All three parts are ROHS3 compliant, Active product status, and operate within the -55°C to 150°C temperature range. All are packaged in 8-SOIC surface mount configuration with identical pin pitch and physical dimensions.
Frequently Asked Questions (FAQ)
Q: Can DMN2009USS-13 be used as a direct replacement for DMN2009LSS-13?
A: Yes. Both parts are manufactured by Diodes Incorporated, share the same base product number (DMN2009), and maintain identical electrical specifications including 20V Vdss, 12A continuous drain current, and 8mOhm Rds On. The primary difference is packaging format (Tape & Reel versus Cut Tape & Digi-Reel®). Both are ROHS3 compliant and Active status. Moisture sensitivity differs at MSL 3 versus MSL 1.
Q: Is SI4408DY-T1-E3 compatible with DMN2009LSS-13 applications?
A: SI4408DY-T1-E3 is electrically compatible and exceeds the performance specifications of DMN2009LSS-13. It provides higher continuous drain current (14A versus 12A), superior Rds On performance (4.5mOhm versus 8mOhm), and lower gate charge (32 nC versus 58.3 nC). Both devices maintain 20V Vdss rating, operate across identical temperature ranges, and are packaged in 8-SOIC surface mount configuration. The SI4408DY-T1-E3 is manufactured by Vishay Siliconix and is ROHS3 compliant with Active product status.
Q: What are the key differences between the three parts?
A: All three parts share 20V Vdss rating, 8-SOIC package type, ROHS3 compliance, and -55°C to 150°C operating temperature range. DMN2009LSS-13 and DMN2009USS-13 are both Diodes Incorporated products with identical electrical specifications but different packaging formats and moisture sensitivity ratings. SI4408DY-T1-E3 is a Vishay Siliconix product with higher current rating (14A), lower Rds On (4.5mOhm), and reduced gate charge (32 nC), representing enhanced performance characteristics.
Q: Are all three parts suitable for high-frequency switching applications?
A: Gate charge and input capacitance characteristics influence switching performance. DMN2009USS-13 exhibits lower gate charge (34 nC) and reduced input capacitance (1706 pF) compared to DMN2009LSS-13 (58.3 nC and 2555 pF respectively). SI4408DY-T1-E3 provides the lowest gate charge (32 nC) among the three parts. Lower gate charge values generally support faster switching transitions and reduced switching losses.
Q: What is the significance of MSL (Moisture Sensitivity Level) differences?
A: MSL rating indicates moisture sensitivity during storage and handling. DMN2009LSS-13 and SI4408DY-T1-E3 are rated MSL 1 (Unlimited), allowing indefinite storage without moisture control. DMN2009USS-13 is rated MSL 3 (168 Hours), requiring moisture control measures and limiting storage duration to 168 hours at specified humidity levels after packaging seal opening. MSL 1 parts offer greater flexibility in inventory management and storage conditions.
Q: Can these parts be used interchangeably in existing PCB designs?
A: Yes, all three parts are packaged in 8-SOIC surface mount configuration with identical pin pitch (0.154", 3.90mm width) and pinout compatibility. PCB layouts designed for DMN2009LSS-13 accommodate all three substitute parts without modification. Electrical parameter differences (current rating, Rds On, gate charge) must be evaluated against specific application requirements to ensure performance compatibility.
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