DMN13H750S-13 Equivalent & Substitute Parts

Part Overview

The DMN13H750S-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 130V drain-to-source voltage with 1A continuous drain current at 25°C. This device is housed in a SOT-23-3 surface mount package and dissipates a maximum of 770mW. The part is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical and mechanical parameters are maintained across the same product family, enabling direct replacement in circuit applications without design modification.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	130	V
Current - Continuous Drain (Id) @ 25°C	1	A
Rds On (Max) @ Id, Vgs	750	mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.6	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	231	pF @ 25V
Power Dissipation (Max)	770	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	SOT-23-3 (TO-236-3, SC-59)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the DMN13H750S-13 are identified based on strict electrical and mechanical parameter equivalence within the DMN13 product family. The substitution criteria are:

Electrical Parameters (Must Match Exactly):

Drain to Source Voltage (Vdss): 130V
Continuous Drain Current (Id) @ 25°C: 1A
On-State Resistance (Rds On) @ 2A, 10V: 750mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA: 4V
Gate Charge (Qg) @ 10V: 5.6nC
Maximum Gate Voltage (Vgs): ±20V
Input Capacitance (Ciss) @ 25V: 231pF
Power Dissipation (Max): 770mW
Operating Temperature Range: -55°C to 150°C

Mechanical Parameters (Must Match Exactly):

Package Type: SOT-23-3 (TO-236-3, SC-59)
Mounting Type: Surface Mount
Tape & Reel Packaging

Compliance Parameters (Must Match Exactly):

RoHS3 Compliance
MSL Rating: 1 (Unlimited)
Product Status: Active

The DMN13H750S-7 meets all substitution criteria and is classified as a parametric equivalent.

Parameter Comparison

Parameter	DMN13H750S-13	DMN13H750S-7	Match
FET Type	N-Channel	N-Channel	✓
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	✓
Drain to Source Voltage (Vdss)	130V	130V	✓
Current - Continuous Drain (Id) @ 25°C	1A	1A	✓
Rds On (Max) @ 2A, 10V	750mOhm	750mOhm	✓
Vgs(th) (Max) @ 250µA	4V	4V	✓
Gate Charge (Qg) @ 10V	5.6nC	5.6nC	✓
Vgs (Max)	±20V	±20V	✓
Input Capacitance (Ciss) @ 25V	231pF	231pF	✓
Power Dissipation (Max)	770mW	770mW	✓
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	✓
Package / Case	SOT-23-3	SOT-23-3	✓
Mounting Type	Surface Mount	Surface Mount	✓
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	✓
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	✓
Product Status	Active	Active	✓

Engineering Selection Recommendations

Both the DMN13H750S-13 and DMN13H750S-7 are active production devices from Diodes Incorporated with identical electrical specifications and mechanical packaging. Selection between these parts may be based on inventory availability and supply chain considerations.

The DMN13H750S-13 carries 1,165 pieces in current stock inventory. The DMN13H750S-7 carries 35,400 pieces in current stock inventory, providing significantly higher availability for high-volume applications.

Both devices maintain full RoHS3 compliance and REACH unaffected status, meeting regulatory requirements for commercial and industrial applications. Both devices carry MSL 1 (Unlimited) moisture sensitivity rating, indicating no special moisture handling requirements during storage or assembly.

The identical electrical and mechanical parameters ensure direct pin-for-pin and functional compatibility in all circuit applications where the DMN13H750S-13 is specified.

Frequently Asked Questions (FAQ)

Q: Can the DMN13H750S-7 be used as a direct replacement for the DMN13H750S-13?

A: Yes. The DMN13H750S-7 is a parametric equivalent with identical electrical ratings (130V Vdss, 1A Id, 750mOhm Rds On), identical gate characteristics (4V Vgs(th), 5.6nC Qg), and identical mechanical packaging (SOT-23-3 surface mount). Direct substitution is supported without circuit modification.

Q: Are there any differences in the SOT-23-3 package between these parts?

A: No. Both parts use the identical SOT-23-3 package designation (also referenced as TO-236-3 or SC-59). Pin configuration, lead spacing, and mounting footprint are identical.

Q: Do both parts have the same compliance certifications?

A: Yes. Both the DMN13H750S-13 and DMN13H750S-7 are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating. Regulatory and environmental compliance is equivalent.

Q: What is the difference between the DMN13H750S-13 and DMN13H750S-7 part numbers?

A: The suffix designations (-13 and -7) indicate different manufacturing date codes or tape reel configurations within the same product family. Electrical and mechanical specifications are identical.

Q: Can these parts be used in high-temperature applications?

A: Yes. Both devices are rated for operating junction temperatures from -55°C to 150°C (TJ), supporting extended temperature range applications.

Q: What is the maximum power dissipation for these MOSFETs?

A: Both devices are rated for 770mW maximum power dissipation at ambient temperature (Ta). Thermal management design should account for this rating in high-current or high-frequency switching applications.

Q: Are these N-Channel MOSFETs suitable for switching applications?

A: Yes. Both devices are N-Channel MOSFETs with 130V voltage rating and 1A continuous current rating, suitable for switching and amplification applications within these electrical limits.

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