DMJT9435-13 Equivalent & Substitute Parts

Part Overview

The DMJT9435-13 is a PNP bipolar junction transistor manufactured by Diodes Incorporated, rated for 30 V collector-emitter breakdown voltage and 3 A maximum collector current. The device is housed in a SOT-223-3 surface mount package and operates across a temperature range of -55°C to 150°C. This transistor is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the primary component becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when enhanced electrical performance characteristics are beneficial within the application constraints. Equivalent devices must maintain compatibility across critical electrical parameters including collector current rating, breakdown voltage, saturation characteristics, and frequency response while conforming to the same or compatible package footprints.

Substiute Parts

DMJT9435-13
Diodes IncorporatedIn Stock: 15634DMJT9435-13 Datasheet
DMJT9435-13
Current Part
NJT4030PT1G
onsemiIn Stock: 35183NJT4030PT1G Datasheet
NJT4030PT1G
MFR Recommended
NJT4030PT3G
onsemiIn Stock: 1810NJT4030PT3G Datasheet
NJT4030PT3G
MFR Recommended
NJV4030PT1G
onsemiIn Stock: 12905NJV4030PT1G Datasheet
NJV4030PT1G
MFR Recommended
NJV4030PT3G
onsemiIn Stock: 5446NJV4030PT3G Datasheet
NJV4030PT3G
MFR Recommended
NSS40300MZ4T1G
onsemiIn Stock: 14435NSS40300MZ4T1G Datasheet
NSS40300MZ4T1G
MFR Recommended
NSS40300MZ4T3G
onsemiIn Stock: 12917NSS40300MZ4T3G Datasheet
NSS40300MZ4T3G
MFR Recommended
NSV40300MZ4T1G
SanyoIn Stock: 13063NSV40300MZ4T1G Datasheet
NSV40300MZ4T1G
MFR Recommended
PBSS303PZ,135
Nexperia USA Inc.In Stock: 4502PBSS303PZ,135 Datasheet
PBSS303PZ,135
MFR Recommended
PBSS4032PZ,115
Nexperia USA Inc.In Stock: 797PBSS4032PZ,115 Datasheet
PBSS4032PZ,115
MFR Recommended
PBSS5350Z,135
Nexperia USA Inc.In Stock: 5127PBSS5350Z,135 Datasheet
PBSS5350Z,135
MFR Recommended
PZT2907AT1G
onsemiIn Stock: 125246PZT2907AT1G Datasheet
PZT2907AT1G
MFR Recommended
PZT2907AT3G
onsemiIn Stock: 24200PZT2907AT3G Datasheet
PZT2907AT3G
MFR Recommended
STN790A
STMicroelectronicsIn Stock: 23474STN790A Datasheet
STN790A
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 800mA, 1V
Power - Max 1.2 W
Frequency - Transition 160 MHz
Operating Temperature -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DMJT9435-13 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP configuration required
  • Current - Collector (Ic) (Max): Minimum 3 A rating
  • Voltage - Collector Emitter Breakdown (Max): Minimum 30 V rating
  • Frequency - Transition: Minimum 160 MHz
  • Operating Temperature Range: Must encompass -55°C to 150°C
  • Package / Case: TO-261-4 or TO-261AA compatible
  • Mounting Type: Surface Mount

Substitution Logic:

Substitute parts are grouped into two categories based on voltage rating:

Category 1: 30 V Rated Devices (Direct Voltage Match)

  • PBSS4032PZ,115 and PBSS303PZ,135 maintain the 30 V collector-emitter breakdown voltage specification of the primary part
  • These devices are suitable for applications where the 30 V rating is a design constraint
  • PBSS4032PZ,115 provides 4.4 A collector current capability, exceeding the 3 A requirement
  • PBSS303PZ,135 provides 5.3 A collector current capability, exceeding the 3 A requirement

Category 2: 40 V Rated Devices (Enhanced Voltage Margin)

  • NJT4030PT1G, NJT4030PT3G, NJV4030PT1G, NJV4030PT3G, NSS40300MZ4T1G, and NSS40300MZ4T3G all feature 40 V collector-emitter breakdown voltage
  • These devices provide enhanced voltage margin for applications operating near the 30 V specification limit
  • All maintain 3 A collector current rating and 160 MHz transition frequency
  • All support the full -55°C to 150°C operating temperature range

Category 3: 50 V Rated Device (Maximum Voltage Margin)

  • PBSS5350Z,135 provides 50 V collector-emitter breakdown voltage
  • Suitable for applications requiring maximum voltage headroom
  • Maintains 3 A collector current rating but operates at 100 MHz transition frequency, below the 160 MHz specification

All substitute parts are housed in SOT-223 (TO-261) surface mount packages compatible with the primary device footprint. All devices maintain RoHS3 compliance and MSL 1 rating.

Parameter Comparison

Part Number Manufacturer Ic (Max) [A] Vce Breakdown (Max) [V] Vce Sat (Max) [mV] hFE (Min) Power (Max) [W] Frequency [MHz] Temp Range [°C] Package Packaging Type
DMJT9435-13 Diodes Incorporated 3 30 550 @ 300mA, 3A 125 @ 800mA, 1V 1.2 160 -55 to 150 SOT-223-3 Tape & Reel
NJT4030PT1G onsemi 3 40 500 @ 300mA, 3A 200 @ 1A, 1V 2 160 -55 to 150 SOT-223 Cut Tape & Digi-Reel
NJT4030PT3G onsemi 3 40 500 @ 300mA, 3A 200 @ 1A, 1V 2 160 -55 to 150 SOT-223 Cut Tape & Digi-Reel
NJV4030PT1G onsemi 3 40 500 @ 300mA, 3A 200 @ 1A, 1V 2 160 -55 to 150 SOT-223 Tape & Reel
NJV4030PT3G onsemi 3 40 500 @ 300mA, 3A 200 @ 1A, 1V 2 160 -55 to 150 SOT-223 Tape & Reel
NSS40300MZ4T1G onsemi 3 40 400 @ 300mA, 3A 175 @ 1A, 1V 2 160 -55 to 150 SOT-223 Tape & Reel
NSS40300MZ4T3G onsemi 3 40 400 @ 300mA, 3A 175 @ 1A, 1V 2 160 -55 to 150 SOT-223 Tape & Reel
NSV40300MZ4T1G Sanyo 3 40 400 @ 300mA, 3A 175 @ 1A, 1V 2 160 -55 to 150 SOT-223 Bulk
PBSS303PZ,135 Nexperia USA Inc. 5.3 30 265 @ 265mA, 5.3A 250 @ 1A, 2V 2 130 -55 to 150 SOT-223 Tape & Reel
PBSS4032PZ,115 Nexperia USA Inc. 4.4 30 400 @ 200mA, 4A 150 @ 2A, 2V 2 130 -55 to 150 SOT-223 Tape & Reel
PBSS5350Z,135 Nexperia USA Inc. 3 50 300 @ 200mA, 2A 100 @ 2A, 2V 2 100 -55 to 150 SOT-223 Cut Tape & Digi-Reel

Engineering Selection Recommendations

For Direct Voltage Specification Compliance (30 V Applications):

PBSS4032PZ,115 is suitable when the application design specifically requires 30 V collector-emitter breakdown voltage matching. This device is AEC-Q100 qualified and automotive grade, providing enhanced reliability for automotive and industrial applications. The 4.4 A collector current rating provides margin above the 3 A requirement. Inventory availability is limited at 778 pieces.

PBSS303PZ,135 provides the highest collector current capability at 5.3 A while maintaining 30 V breakdown voltage. This device is also AEC-Q100 qualified and automotive grade. The 130 MHz transition frequency is below the primary part specification. Inventory availability is 4463 pieces.

For Enhanced Voltage Margin (40 V Applications):

NJT4030PT1G and NJT4030PT3G (onsemi) are direct electrical equivalents with identical electrical characteristics. Both maintain 3 A collector current, 160 MHz transition frequency, and full temperature range operation. NJT4030PT1G is available in Cut Tape & Digi-Reel packaging with 35100 pieces in stock. NJT4030PT3G is available in Cut Tape & Digi-Reel packaging with 1796 pieces in stock.

NJV4030PT1G and NJV4030PT3G (onsemi) are identical electrical equivalents to the NJT series but supplied in Tape & Reel packaging. NJV4030PT1G has 12863 pieces in stock. NJV4030PT3G has 5400 pieces in stock.

NSS40300MZ4T1G and NSS40300MZ4T3G (onsemi) provide improved saturation voltage characteristics at 400 mV compared to 500 mV for the NJT series. Both maintain 3 A collector current and 160 MHz transition frequency. NSS40300MZ4T1G has 14402 pieces in stock. NSS40300MZ4T3G has 12863 pieces in stock.

NSV40300MZ4T1G (Sanyo) provides equivalent electrical performance to the NSS series with 400 mV saturation voltage. This device is supplied in Bulk packaging with 12963 pieces in stock.

For Maximum Voltage Margin (50 V Applications):

PBSS5350Z,135 is suitable when applications require maximum voltage headroom. This device operates at 100 MHz transition frequency, which is below the primary part specification. The 50 V breakdown voltage provides significant margin for high-voltage applications. Inventory availability is 5100 pieces.

Compliance and Certification:

All substitute parts maintain RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity level, matching the primary device specifications. PBSS series devices carry AEC-Q100 automotive qualification. All devices are classified as Active product status.

Frequently Asked Questions (FAQ)

Q: Can NJT4030PT1G be used as a direct replacement for DMJT9435-13?

A: NJT4030PT1G is electrically compatible with DMJT9435-13 for applications where 40 V collector-emitter breakdown voltage is acceptable. Both devices maintain 3 A collector current, 160 MHz transition frequency, and -55°C to 150°C operating temperature range. The NJT4030PT1G features improved saturation voltage characteristics (500 mV vs. 550 mV) and higher DC current gain (200 vs. 125). Both are housed in compatible SOT-223 packages. The primary difference is packaging format: DMJT9435-13 is supplied in Tape & Reel, while NJT4030PT1G is supplied in Cut Tape & Digi-Reel.

Q: What is the difference between NJT4030PT1G and NSS40300MZ4T1G?

A: Both devices are 40 V rated PNP transistors with 3 A collector current and 160 MHz transition frequency. The primary difference is saturation voltage: NSS40300MZ4T1G features 400 mV saturation voltage compared to 500 mV for NJT4030PT1G. NSS40300MZ4T1G also has a lower DC current gain minimum of 175 compared to 200 for NJT4030PT1G. Both are supplied in Tape & Reel packaging by onsemi.

Q: Why would I choose PBSS4032PZ,115 over the 40 V alternatives?

A: PBSS4032PZ,115 is selected when the application design specifically requires 30 V collector-emitter breakdown voltage matching the primary DMJT9435-13 specification. This device provides 4.4 A collector current capability, exceeding the 3 A requirement. PBSS4032PZ,115 carries AEC-Q100 automotive qualification and is automotive grade, making it suitable for automotive and industrial applications requiring enhanced reliability certification.

Q: Is PBSS5350Z,135 a suitable substitute?

A: PBSS5350Z,135 is suitable for applications requiring maximum voltage margin at 50 V collector-emitter breakdown. However, this device operates at 100 MHz transition frequency, which is below the primary part specification of 160 MHz. Selection of this device requires confirmation that the reduced frequency response is acceptable for the application.

Q: What packaging format differences exist among the substitute parts?

A: Substitute parts are supplied in three packaging formats: Tape & Reel (TR), Cut Tape & Digi-Reel (CT), and Bulk. DMJT9435-13 is supplied in Tape & Reel. NJT4030PT1G and NJT4030PT3G are supplied in Cut Tape & Digi-Reel. NJV4030PT1G, NJV4030PT3G, NSS40300MZ4T1G, and NSS40300MZ4T3G are supplied in Tape & Reel. NSV40300MZ4T1G is supplied in Bulk. Selection of packaging format depends on manufacturing process requirements and assembly equipment compatibility.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant and maintain MSL 1 (unlimited) moisture sensitivity level, matching the primary device specifications. This ensures environmental compliance and handling requirements are consistent across all alternatives.

Q: What is the significance of the PT1G and PT3G designations in onsemi part numbers?

A: The PT1G and PT3G designations indicate different tape reel configurations or manufacturing date codes within the same electrical specification. Both variants maintain identical electrical characteristics and are functionally interchangeable. Selection between PT1G and PT3G variants depends on inventory availability and manufacturing scheduling requirements.

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