DMJ70H600SH3 Equivalent & Substitute Parts

Part Overview

The DMJ70H600SH3 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 700V drain-to-source voltage with 11A continuous drain current at 25°C. This device is packaged in a TO-251-3 configuration and is designed for through-hole mounting applications. The part carries Automotive grade qualification (AEC-Q101) and is ROHS3 compliant.

The DMJ70H600SH3 is classified as Obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

DMJ70H600SH3

Diodes IncorporatedIn Stock: 1066DMJ70H600SH3 Datasheet

Current PartRFQ

IXTU8N70X2

IXYSIn Stock: 1216IXTU8N70X2 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMJ70H600SH3 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 700V Vdss rating to ensure safe operation within the same voltage domain.

Current Handling Capability: The substitute part must support continuous drain current at or above the 11A specification at 25°C to preserve circuit performance and thermal characteristics.

Gate Drive Voltage: The substitute part must operate with the same 10V drive voltage specification to maintain gate drive circuit compatibility.

Threshold Voltage: The substitute part must maintain Vgs(th) specifications within acceptable operating ranges to ensure proper switching behavior.

Thermal Performance: The substitute part must support power dissipation requirements equivalent to or exceeding the 113W specification.

Package Compatibility: The substitute part must use the TO-251-3 through-hole package to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: The substitute part must support the -55°C to 150°C operating temperature range.

Compliance Requirements: The substitute part must maintain ROHS3 compliance and automotive-grade qualification where applicable.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The DMJ70H600SH3 is classified as Obsolete, making the IXTU8N70X2 a viable alternative due to its Active product status and current availability in inventory (1149 pcs).

Compliance Alignment: Both parts maintain ROHS3 compliance. The DMJ70H600SH3 carries AEC-Q101 automotive qualification; the IXTU8N70X2 qualification status is not specified in the provided data.

Electrical Parameter Alignment: The IXTU8N70X2 matches the critical voltage rating (700V Vdss) and drive voltage (10V) specifications. The substitute part is rated for 8A continuous drain current compared to the main part's 11A rating. Applications requiring the full 11A capability must evaluate whether the 8A rating of the substitute is acceptable for the specific circuit design.

Thermal Performance: The IXTU8N70X2 provides superior power dissipation capability (150W versus 113W), offering thermal margin in applications where the main part was operating near its thermal limits.

Package Compatibility: Both parts use the TO-251-3 through-hole package. The main part specifies short leads while the substitute specifies stub leads. PCB layout verification is necessary to confirm mechanical fit within existing designs.

Gate Charge and Switching Characteristics: The IXTU8N70X2 exhibits lower gate charge (12 nC versus 18.2 nC), which may result in faster switching transitions and reduced gate drive power requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXTU8N70X2 directly replace the DMJ70H600SH3 in all applications?

A: Direct replacement depends on application current requirements. The IXTU8N70X2 is rated for 8A continuous drain current versus the DMJ70H600SH3's 11A rating. Applications operating at or below 8A are compatible. Applications requiring the full 11A capability require circuit redesign or alternative component selection. Both parts share the same 700V voltage rating, 10V drive voltage, and TO-251-3 package family, supporting mechanical and electrical compatibility in these aspects.

Q: What is the significance of the different lead lengths (short leads versus stub leads) in the TO-251-3 package?

A: Lead length differences between TO-251-3 Short Leads and TO-251-3 Stub Leads affect PCB hole positioning and component seating depth. Existing PCB designs must be verified for compatibility with the substitute part's stub lead configuration. Physical measurement of the PCB hole pattern and component mounting area is necessary to confirm fit.

Q: Does the IXTU8N70X2 meet automotive qualification requirements?

A: The provided data does not specify automotive qualification or AEC-Q101 certification for the IXTU8N70X2. The DMJ70H600SH3 carries Automotive grade and AEC-Q101 qualification. Applications requiring automotive-grade components must confirm the IXTU8N70X2's qualification status with the manufacturer before substitution.

Q: How do the on-resistance specifications compare between these parts?

A: The DMJ70H600SH3 specifies Rds On (Max) of 600 mOhm at 2.4A and 10V gate voltage. The IXTU8N70X2 specifies Rds On (Max) of 500 mOhm at 500mA and 10V gate voltage. The specifications are measured at different current levels, making direct comparison difficult. At the IXTU8N70X2's rated 8A continuous current, on-resistance performance must be evaluated from the manufacturer's detailed datasheet.

Q: What is the impact of the higher input capacitance in the IXTU8N70X2?

A: The IXTU8N70X2 exhibits input capacitance (Ciss) of 800 pF at 10V compared to the DMJ70H600SH3's 643 pF at 25V. Higher input capacitance increases gate charge requirements and may affect switching speed and gate drive circuit performance. Gate drive circuits must be evaluated to confirm adequate drive capability for the substitute part's capacitive load.

Q: Is the lower gate charge of the IXTU8N70X2 beneficial?

A: The IXTU8N70X2 specifies gate charge (Qg) of 12 nC at 10V versus the DMJ70H600SH3's 18.2 nC at 10V. Lower gate charge reduces the energy required to switch the device and may enable faster switching transitions. This characteristic is generally beneficial for gate drive efficiency and switching speed, provided the gate drive circuit is compatible with the substitute part's electrical characteristics.

Q: What inventory considerations apply to these parts?

A: The DMJ70H600SH3 has 1019 pcs in stock but is classified as Obsolete, indicating no future production. The IXTU8N70X2 has 1149 pcs in stock and is classified as Active, indicating ongoing production and long-term availability. For new designs or long-term production requirements, the IXTU8N70X2 offers superior supply chain continuity.