DMG963HD0R Equivalent & Substitute Parts

Part Overview

The DMG963HD0R is a pre-biased dual bipolar transistor (BJT) manufactured by Panasonic Electronic Components, combining one NPN and one PNP transistor in a single surface mount package. This component is designed for applications requiring integrated base bias resistors, simplifying circuit design and reducing component count. The part is rated for 50V collector-emitter breakdown voltage and 100mA maximum collector current with 125mW power dissipation in the SSMini5-F4-B package configuration.

The DMG963HD0R has been discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility with existing designs. Substitute parts must satisfy the same voltage, current, and power requirements while accommodating potential package differences in board layout considerations.

Substiute Parts

DMG963HD0R

Panasonic Electronic ComponentsIn Stock: 924DMG963HD0R Datasheet

Current PartRFQ

EMC2DXV5T1G

onsemiIn Stock: 1239EMC2DXV5T1G Datasheet

SimilarRFQ

NSVEMC2DXV5T1G

onsemiIn Stock: 5822NSVEMC2DXV5T1G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMG963HD0R is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
• Maximum collector-emitter breakdown voltage: 50V minimum
• Maximum collector current: 100mA minimum
• Maximum power dissipation: 125mW minimum
• Saturation voltage characteristics: 250mV maximum at specified bias conditions
• Collector cutoff current: 500nA maximum

Mechanical Compatibility Criteria:

• Surface mount technology
• Pin count and functional pin assignment compatibility
• Moisture sensitivity level: MSL 1 or equivalent

Compliance Criteria:

• RoHS compliance status
• ECCN classification: EAR99

The substitute parts identified (EMC2DXV5T1G and NSVEMC2DXV5T1G) satisfy all electrical requirements and maintain RoHS compliance. Both substitute parts exceed the power dissipation requirement (500mW versus 125mW), providing additional thermal margin. Package differences (SOT-553 versus SOT-665) require board layout verification but do not affect electrical functionality.

Parameter Comparison

Engineering Selection Recommendations

EMC2DXV5T1G and NSVEMC2DXV5T1G Selection Basis:

Both onsemi substitute parts (EMC2DXV5T1G and NSVEMC2DXV5T1G) are functionally equivalent to the discontinued DMG963HD0R across all critical electrical parameters. Both parts are currently in active production status with substantial inventory availability (1176 and 5791 units respectively), ensuring supply chain continuity.

Compliance Alignment:

• Both substitute parts maintain RoHS3 compliance, exceeding the RoHS compliance requirement of the original part
• Both parts carry REACH Unaffected status, providing additional regulatory assurance
• ECCN classification remains EAR99 for all three parts
• Moisture sensitivity level remains MSL 1 (Unlimited) across all parts

Electrical Performance:

• Both substitute parts meet or exceed all voltage, current, and power specifications
• Power dissipation capability is increased to 500mW, providing 4x thermal margin over the original 125mW specification
• Saturation voltage characteristics are identical (250mV maximum)
• Collector cutoff current specifications are identical (500nA maximum)

Package Consideration: The substitute parts utilize SOT-553 packaging instead of the original SOT-665 package. This represents a physical footprint change requiring board layout verification. Both packages are standard surface mount configurations with equivalent pin functionality for the dual pre-biased transistor application.

Inventory Status: The original DMG963HD0R is discontinued. The substitute parts are in active production with confirmed inventory levels, supporting immediate procurement and long-term availability.

Frequently Asked Questions (FAQ)

Q: Can EMC2DXV5T1G or NSVEMC2DXV5T1G be used as direct replacements for DMG963HD0R?

A: Both onsemi parts satisfy all electrical specifications for the DMG963HD0R. The primary consideration is package footprint change from SOT-665 to SOT-553. Electrical functionality is maintained. Board layout must be verified to accommodate the different package dimensions.

Q: What is the difference between EMC2DXV5T1G and NSVEMC2DXV5T1G?

A: Both parts are manufactured by onsemi and share identical electrical specifications, package type (SOT-553), and compliance certifications. The primary difference is the part number designation and internal pre-bias configuration description. Both are functionally equivalent for the DMG963HD0R application.

Q: Are the base resistor values compatible between the original and substitute parts?

A: The DMG963HD0R offers base resistor options of 10kOhms or 22kOhms for R1, and 10kOhms or 47kOhms for R2. Both substitute parts use fixed 22kOhms for both R1 and R2. Circuit designs must accommodate this fixed resistor configuration. The 22kOhms value falls within the original part's available range, supporting functional compatibility in most applications.

Q: What is the impact of increased power dissipation in the substitute parts?

A: The substitute parts are rated for 500mW maximum power dissipation compared to 125mW for the original part. This represents a 4x increase in thermal capability and provides additional design margin. No negative impact results from this increased rating; thermal performance is improved.

Q: Do the substitute parts maintain RoHS compliance?

A: Yes. Both EMC2DXV5T1G and NSVEMC2DXV5T1G are ROHS3 compliant, exceeding the RoHS compliance requirement of the original DMG963HD0R. Both parts also carry REACH Unaffected status.

Q: What is the moisture sensitivity level for the substitute parts?

A: Both substitute parts maintain MSL 1 (Unlimited) classification, identical to the original part. No additional moisture control measures are required during handling or storage.

Q: Are there any frequency or transition frequency differences?

A: Transition frequency data is not provided for any of the three parts in the available specifications. Selection should be based on the provided electrical parameters.

Q: How does the DC current gain differ between parts?

A: The original DMG963HD0R specifies minimum DC current gain (hFE) of 35 for the NPN transistor and 80 for the PNP transistor at 5mA collector current and 10V Vce. Both substitute parts specify 60 @ 5mA, 10V. This represents a single combined specification rather than separate NPN/PNP values. Circuit designs relying on specific hFE matching should be evaluated against the substitute part specifications.