DMG8880LSS-13 Equivalent & Substitute Parts

Part Overview

The DMG8880LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 11.6A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and features a maximum on-resistance of 10mOhm at 11.6A and 10V gate-source voltage.

The DMG8880LSS-13 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	11.6	A
On-Resistance (Rds On) @ 11.6A, 10V	10	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 10V	27.6	nC
Input Capacitance (Ciss) @ 15V	1289	pF
Power Dissipation (Max)	1.43	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the DMG8880LSS-13 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 30V
Continuous Drain Current (Id) must equal or exceed 11.6A at 25°C
On-Resistance (Rds On) must not exceed 10mOhm at rated current and 10V gate-source voltage
Gate-Source Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
Maximum Gate-Source Voltage (Vgs Max) must accommodate ±20V operation
Operating temperature range must span -55°C to 150°C minimum

Mechanical Compatibility Criteria:

Mounting type must be Surface Mount
Package must be 8-SOIC with 0.154" (3.90mm) width
Pin configuration must be compatible with 8-SO/8-SOIC footprints

Regulatory Compliance:

RoHS3 compliance required
REACH unaffected status required
ECCN EAR99 classification required

Substitute parts are grouped into two categories: direct electrical equivalents with matching current ratings and thermal performance, and higher-performance alternatives that exceed the original specifications while maintaining full backward compatibility.

Parameter Comparison

Parameter	DMG8880LSS-13	FDS8880	IRF7821TRPBF	IRF8714TRPBF	SI4174DY-T1-GE3	BSO110N03MSGXUMA1	FDS6680A
Manufacturer	Diodes Inc.	onsemi	Infineon	Infineon	Vishay	Infineon	onsemi
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	11.6	11.6	13.6	14	17	10	12.5
Rds On @ 10V (mOhm)	10	10	9.1	8.7	9.5	11	9.5
Vgs(th) @ 250µA (V)	2	2.5	1	2.35	2.2	2	3
Qg @ 10V (nC)	27.6	30	14	12	27	20	23
Ciss @ 15V (pF)	1289	1235	1010	1020	985	1500	1620
Power Dissipation (W)	1.43	2.5	2.5	2.5	2.5 / 5	1.56	2.5
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 155	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL Rating	1	1	1	1	1	3	1

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

FDS8880 (onsemi) is the recommended primary substitute for the DMG8880LSS-13. This device maintains identical electrical specifications including 11.6A continuous drain current and 10mOhm on-resistance at 10V gate-source voltage. The FDS8880 is classified as Active product status, ensuring long-term availability and supply chain continuity. The device is ROHS3 compliant with MSL rating of 1 (Unlimited), matching the original part's handling requirements. The 8-SOIC package is pin-compatible with the DMG8880LSS-13.

Higher-Performance Alternatives:

IRF7821TRPBF (Infineon) and IRF8714TRPBF (Infineon) provide enhanced performance with higher continuous drain current ratings (13.6A and 14A respectively) and lower on-resistance values (9.1mOhm and 8.7mOhm). Both devices maintain 30V Vdss rating and are classified as Active. These alternatives are suitable for applications requiring improved thermal performance or lower conduction losses. Both devices feature MSL rating of 1 and ROHS3 compliance.

SI4174DY-T1-GE3 (Vishay) offers the highest current rating at 17A with 9.5mOhm on-resistance. This device provides dual power dissipation ratings (2.5W Ta, 5W Tc) and is classified as Active. The higher current capacity accommodates designs with increased thermal margin.

Lower-Current Alternative:

BSO110N03MSGXUMA1 (Infineon) is suitable only for applications where 10A continuous drain current is acceptable. This device features 11mOhm on-resistance and is classified as Active. The MSL rating of 3 (168 Hours) requires controlled moisture exposure during storage and handling compared to the original part's MSL 1 rating.

Marginal Substitute:

FDS6680A (onsemi) provides 12.5A continuous drain current with 9.5mOhm on-resistance, exceeding the original specifications. This device is classified as Active and maintains ROHS3 compliance with MSL rating of 1. The higher current rating and improved on-resistance make this device suitable for designs requiring enhanced performance margins.

Frequently Asked Questions (FAQ)

Q: Can the FDS8880 be used as a direct replacement for the DMG8880LSS-13?

A: Yes. The FDS8880 maintains identical electrical specifications including 30V Vdss, 11.6A continuous drain current, and 10mOhm on-resistance at 10V gate-source voltage. The 8-SOIC package is mechanically compatible. The FDS8880 is classified as Active, providing superior supply chain availability compared to the obsolete DMG8880LSS-13.

Q: What is the difference between the substitute parts in terms of current handling?

A: The substitute parts span a range of continuous drain current ratings. FDS8880 matches the original at 11.6A. IRF7821TRPBF and IRF8714TRPBF provide 13.6A and 14A respectively. SI4174DY-T1-GE3 offers the highest rating at 17A. BSO110N03MSGXUMA1 provides 10A, which is below the original specification. FDS6680A provides 12.5A. Selection depends on application current requirements and thermal design constraints.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts are housed in 8-SOIC packages with 0.154" (3.90mm) width, maintaining pin-to-pin compatibility with the DMG8880LSS-13. No PCB layout modifications are required for mechanical substitution.

Q: What is the significance of the MSL (Moisture Sensitivity Level) rating difference?

A: The DMG8880LSS-13 and most substitute parts carry MSL rating 1 (Unlimited), indicating no moisture-related storage restrictions. BSO110N03MSGXUMA1 carries MSL rating 3 (168 Hours), requiring controlled moisture exposure during storage and handling. MSL 3 devices must be baked before reflow soldering if storage time exceeds 168 hours at specified humidity levels.

Q: Can higher-current-rated substitutes be used in place of the DMG8880LSS-13?

A: Yes. IRF7821TRPBF, IRF8714TRPBF, SI4174DY-T1-GE3, and FDS6680A all exceed the original current specification while maintaining 30V Vdss rating and compatible on-resistance characteristics. These devices provide additional thermal margin and are suitable for applications where the original part's current rating is marginal. No circuit modifications are required.

Q: What is the impact of on-resistance variation among substitute parts?

A: On-resistance values range from 8.7mOhm (IRF8714TRPBF) to 11mOhm (BSO110N03MSGXUMA1). Lower on-resistance reduces conduction losses and heat generation. The original DMG8880LSS-13 specifies 10mOhm. Substitutes with lower on-resistance (9.1mOhm to 9.5mOhm) improve efficiency. BSO110N03MSGXUMA1 at 11mOhm represents a marginal increase in conduction losses.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant, matching the original DMG8880LSS-13 regulatory status. All devices are classified as REACH Unaffected or REACH information available upon request, maintaining compliance with environmental regulations.

Q: What is the operating temperature range compatibility?

A: The DMG8880LSS-13 operates from -55°C to 150°C. All substitute parts maintain this range or exceed it. IRF7821TRPBF extends to 155°C maximum junction temperature. All devices are suitable for applications within the original temperature specification.

Q: How does gate charge (Qg) variation affect circuit design?

A: Gate charge values range from 12nC (IRF8714TRPBF) to 30nC (FDS8880). Lower gate charge reduces gate drive power requirements and switching losses. The original DMG8880LSS-13 specifies 27.6nC. Substitutes with lower gate charge (12nC to 14nC) reduce driver circuit stress. Higher values (20nC to 30nC) require proportionally higher gate drive current.

Q: Is the IRF7458TRPBF listed as a substitute?

A: IRF7458TRPBF is not recommended as a primary substitute. Although it provides 14A continuous drain current and 8mOhm on-resistance, it is classified as Not For New Designs. This status indicates Infineon has discontinued active support for new applications. For new designs, select from Active-status alternatives including IRF7821TRPBF, IRF8714TRPBF, or FDS8880.

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