DMG8822UTS-13 Equivalent & Substitute Parts

Part Overview

The DMG8822UTS-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in automotive-grade environments. This device integrates two N-channel MOSFETs in a common drain configuration within an 8-TSSOP package. The part is currently active in production with AEC-Q101 automotive qualification and ROHS3 compliance. Substitute parts are identified to address inventory availability, supply chain continuity, or specific application requirements while maintaining electrical and mechanical compatibility.

Substiute Parts

DMG8822UTS-13

Diodes IncorporatedIn Stock: 9265DMG8822UTS-13 Datasheet

Current PartRFQ

SI6926ADQ-T1-GE3

Vishay SiliconixIn Stock: 24268SI6926ADQ-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMG8822UTS-13 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 20V
• Package Type: 8-TSSOP surface mount
• Configuration: Dual N-channel
• Operating Temperature Range: -55°C to 150°C
• Automotive Grade Qualification: AEC-Q101
• RoHS3 Compliance

Allowable Variation Parameters:

• Continuous Drain Current (Id): Substitute must meet or exceed 4.9A specification
• On-Resistance (Rds On): Substitute must not exceed 25 mOhm at rated conditions
• Gate Threshold Voltage (Vgs(th)): Substitute must not exceed 900 mV
• Gate Charge (Qg): Substitute must not exceed 9.6 nC
• Maximum Power Dissipation: Substitute must meet or exceed 870 mW

The SI6926ADQ-T1-GE3 qualifies as a direct substitute based on matching voltage rating, package configuration, temperature range, and automotive compliance. Minor variations in drain current (4.1A versus 4.9A) and on-resistance (30 mOhm versus 25 mOhm) represent acceptable trade-offs within the same functional class.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection (DMG8822UTS-13): The DMG8822UTS-13 remains the preferred choice for applications requiring maximum drain current capacity (4.9A) and lowest on-resistance (25 mOhm). This part carries explicit AEC-Q101 automotive qualification and is actively produced with 9,200 units in stock.

Substitute Selection (SI6926ADQ-T1-GE3): The SI6926ADQ-T1-GE3 serves as a functional equivalent for applications where the reduced drain current specification (4.1A) and slightly elevated on-resistance (30 mOhm) are acceptable within circuit design margins. This substitute maintains identical voltage rating, package footprint, and temperature range. Both parts are ROHS3 compliant and carry MSL 1 moisture sensitivity rating. The SI6926ADQ-T1-GE3 features Logic Level Gate operation, which may provide advantages in low-voltage gate drive applications. Higher inventory availability (24,200 units) supports supply chain flexibility.

Compatibility Verification: Both parts are surface mount devices in 8-TSSOP packaging with identical physical dimensions (0.173" width, 4.40mm). PCB layout and thermal management considerations remain unchanged between primary and substitute selections. Gate drive voltage requirements differ slightly (900 mV threshold for DMG8822UTS-13 versus 1000 mV for SI6926ADQ-T1-GE3), requiring verification against circuit gate drive specifications.

Frequently Asked Questions (FAQ)

Q: Can the SI6926ADQ-T1-GE3 be used as a direct replacement for the DMG8822UTS-13 in existing designs?

A: The SI6926ADQ-T1-GE3 is mechanically and electrically compatible for most applications. The 8-TSSOP package footprint is identical, and both devices operate across the same -55°C to 150°C temperature range at 20V Vdss. However, the reduced drain current rating (4.1A versus 4.9A) and increased on-resistance (30 mOhm versus 25 mOhm) must be evaluated against circuit current and power dissipation requirements. Gate threshold voltage difference (1000 mV versus 900 mV) requires verification against gate drive circuit specifications.

Q: What are the key electrical differences between these two parts?

A: The primary differences are continuous drain current (4.9A for DMG8822UTS-13 versus 4.1A for SI6926ADQ-T1-GE3), on-resistance (25 mOhm versus 30 mOhm at rated conditions), gate threshold voltage (900 mV versus 1000 mV), gate charge (9.6 nC versus 10.5 nC), and maximum power dissipation (870 mW versus 830 mW). The SI6926ADQ-T1-GE3 includes Logic Level Gate feature, which the DMG8822UTS-13 does not specify.

Q: Are both parts suitable for automotive applications?

A: The DMG8822UTS-13 carries explicit AEC-Q101 automotive qualification. The SI6926ADQ-T1-GE3 automotive qualification status is not specified in the provided data. Both parts are ROHS3 compliant and carry MSL 1 moisture sensitivity rating, supporting automotive manufacturing environments.

Q: What is the impact of the on-resistance difference on circuit performance?

A: The 5 mOhm difference in on-resistance (25 mOhm versus 30 mOhm) results in increased power dissipation at equivalent current levels. At 4.1A drain current, the SI6926ADQ-T1-GE3 dissipates approximately 0.5 mW more than the DMG8822UTS-13 at the same gate voltage. Circuit thermal design must accommodate this difference, particularly in high-frequency switching applications.

Q: Can these parts be used interchangeably in high-current applications?

A: The DMG8822UTS-13 is preferred for applications approaching or exceeding 4.1A continuous drain current due to its higher current rating (4.9A). The SI6926ADQ-T1-GE3 is suitable for applications operating below 4.1A. Both parts support the full -55°C to 150°C operating temperature range without derating within their respective current specifications.

Q: What packaging considerations apply to both parts?

A: Both devices use 8-TSSOP surface mount packaging with identical physical dimensions (0.173" width, 4.40mm). PCB footprint, solder reflow profiles, and thermal management approaches are interchangeable. Both parts carry MSL 1 moisture sensitivity, requiring standard moisture control during storage and assembly.