DMG4812SSS-13 Equivalent & Substitute Parts

Part Overview

The DMG4812SSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage and 8A continuous drain current in a surface mount 8-SOIC package. This device features a Schottky body diode and is designed for general-purpose switching applications requiring moderate current handling in compact form factors.

The DMG4812SSS-13 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	8	A
Rds On (Max) @ Id, Vgs	15 mOhm @ 10.7A, 10V	—
Vgs(th) (Max) @ Id	2.3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18.5	nC @ 10V
Vgs (Max)	±12	V
Input Capacitance (Ciss) (Max) @ Vds	1849	pF @ 15V
Power Dissipation (Max)	1.54	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the DMG4812SSS-13 are qualified based on the following criteria:

Electrical Compatibility:

Identical Drain to Source Voltage (Vdss) of 30V
Continuous Drain Current (Id) equal to or greater than 8A
Gate threshold voltage (Vgs(th)) within compatible operating range
Maximum gate voltage (Vgs) sufficient for standard gate drive circuits
Operating temperature range encompassing -55°C to 150°C

Mechanical Compatibility:

Surface mount technology
8-SOIC package with 0.154" (3.90mm) width standard
Pin configuration compatible with 8-SO/8-SOIC footprints

Regulatory & Quality Compliance:

RoHS3 compliance
MSL rating of 1 (Unlimited) or equivalent
REACH compliance status

Substitutes meeting these criteria are functionally interchangeable within the electrical and thermal constraints of the original design. Parts with higher current ratings, lower on-resistance, or improved thermal characteristics provide enhanced performance margins while maintaining full backward compatibility.

Parameter Comparison

Parameter	DMG4812SSS-13	AO4468	FDS6690A	FDS8878	SI4178DY-T1-GE3
Manufacturer	Diodes Incorporated	Alpha & Omega Semiconductor Inc.	onsemi	Fairchild Semiconductor	Vishay Siliconix
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	8	10.5	11	10.2	12
Rds On (Max) @ Vgs 10V (mOhm)	15 @ 10.7A	14 @ 11.6A	12.5 @ 11A	14 @ 10.2A	21 @ 8.4A
Vgs(th) (Max) @ 250µA (V)	2.3	3	3	2.5	2.8
Qg (Max) @ 10V (nC)	18.5	24	16	26	12
Vgs (Max) (V)	±12	±20	±20	±20	±25
Ciss (Max) @ 15V (pF)	1849	1200	1205	897	405
Power Dissipation (Max) (W)	1.54	3.1	2.5	2.5	2.4 (Ta) / 5 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant

Engineering Selection Recommendations

For Active Production and New Designs:

FDS6690A (onsemi) is the primary recommended substitute. This part carries Active product status, ensuring long-term availability and supply chain stability. It provides 11A continuous drain current, exceeding the original 8A specification, with superior on-resistance performance (12.5 mOhm) and lower gate charge (16 nC @ 10V). Full RoHS3 compliance and MSL 1 rating match the original specification. The PowerTrench® series technology delivers improved thermal performance with 2.5W maximum power dissipation.

SI4178DY-T1-GE3 (Vishay Siliconix) is an alternative for applications requiring enhanced performance margins. This TrenchFET® device offers the highest continuous drain current (12A) and lowest input capacitance (405 pF), reducing gate drive requirements. Active product status and ROHS3 compliance ensure supply continuity. The higher maximum gate voltage (±25V) provides additional design flexibility.

For Legacy System Support:

FDS8878 (Fairchild Semiconductor) maintains Active product status and provides 10.2A continuous drain current with 2.5W power dissipation. This part is suitable for direct replacement in existing designs where supply of the obsolete DMG4812SSS-13 is no longer available.

AO4468 (Alpha & Omega Semiconductor Inc.) carries Not For New Designs status and should be used only for legacy system maintenance or repair applications where design changes are not feasible.

Compliance Verification:

All recommended substitutes maintain ROHS3 compliance, MSL 1 rating, and -55°C to 150°C operating temperature range. Regulatory certifications (REACH, ECCN, HTSUS) are equivalent across all substitute options.

Frequently Asked Questions (FAQ)

Q: Can the AO4468 be used as a direct replacement for the DMG4812SSS-13?

A: The AO4468 meets all electrical and mechanical compatibility requirements, including 30V Vdss, 10.5A continuous drain current, 8-SOIC package, and RoHS3 compliance. However, AO4468 carries Not For New Designs status. For new production, FDS6690A or SI4178DY-T1-GE3 are preferred due to Active product status and superior long-term availability.

Q: What is the primary advantage of FDS6690A over the original DMG4812SSS-13?

A: FDS6690A provides 11A continuous drain current (37.5% higher than the original 8A), lower on-resistance (12.5 mOhm vs. 15 mOhm), and reduced gate charge (16 nC vs. 18.5 nC). These improvements reduce power dissipation and switching losses while maintaining identical 30V voltage rating and 8-SOIC package compatibility. Active product status ensures ongoing availability.

Q: Are all substitute parts pin-compatible with the DMG4812SSS-13?

A: Yes. All substitute parts use the standard 8-SOIC package with 0.154" (3.90mm) width. Pin configuration for N-Channel MOSFETs in this package is standardized: Gate, Drain, Source, and Drain connections follow industry convention. Direct PCB footprint compatibility is confirmed.

Q: What is the difference between the power dissipation ratings for SI4178DY-T1-GE3?

A: SI4178DY-T1-GE3 specifies two power dissipation values: 2.4W (Ta) measured at ambient temperature and 5W (Tc) measured at case temperature. The case temperature measurement reflects improved thermal coupling to the package. For thermal design calculations, use the Ta rating (2.4W) unless case temperature monitoring is implemented.

Q: Can I use SI4178DY-T1-GE3 in a circuit designed for ±12V gate drive?

A: Yes. SI4178DY-T1-GE3 supports ±25V maximum gate voltage, which exceeds the ±12V specification of the original DMG4812SSS-13. The device operates safely within the original ±12V gate drive specification with additional voltage margin. Gate threshold voltage (2.8V @ 250µA) is compatible with standard gate drive circuits.

Q: Which substitute offers the lowest input capacitance?

A: SI4178DY-T1-GE3 provides the lowest input capacitance at 405 pF @ 15V, compared to 1849 pF for the original DMG4812SSS-13. Lower input capacitance reduces gate charge requirements and enables faster switching transitions, beneficial for high-frequency applications.

Q: Are all substitutes available in the same packaging options?

A: All substitute parts are available in 8-SOIC surface mount packages. FDS6690A and SI4178DY-T1-GE3 are available in Cut Tape (CT) and Digi-Reel® packaging. Verify specific packaging availability with your distributor for production volume requirements.

Q: What is the moisture sensitivity level for all substitute parts?

A: FDS6690A, AO4468, and SI4178DY-T1-GE3 all carry MSL 1 (Unlimited) rating, matching the original DMG4812SSS-13. This indicates minimal moisture sensitivity and no special storage or handling requirements beyond standard ESD precautions.

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