DMG4466SSSL-13 Equivalent & Substitute Parts

Part Overview

The DMG4466SSSL-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 10A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is designed for general-purpose switching and amplification applications in power management circuits.

The part is currently in Active product status with 5400 units in stock. Equivalent and substitute parts are identified based on matching electrical performance parameters, package compatibility, and thermal characteristics. Substitutes enable design flexibility, support supply chain alternatives, and provide options for different manufacturing processes or feature sets.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	10	A
Rds On (Max) @ 10V Vgs	23	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.4	V
Gate Charge (Qg) @ 10V	17	nC
Power Dissipation (Max)	1.42	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the DMG4466SSSL-13 is determined by the following core electrical and mechanical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 10A or greater at 25°C
Package Type: 8-SOIC surface mount configuration
FET Type: N-Channel MOSFET technology
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

Rds On (Max) @ 10V Vgs: 23 mOhm or lower (lower values indicate improved performance)
Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
Power Dissipation: Thermal capability sufficient for application requirements
RoHS3 Compliance and EAR99 classification

Substitute parts identified in this reference meet or exceed the primary electrical specifications of the DMG4466SSSL-13. Variations in secondary parameters such as gate charge, input capacitance, and power dissipation reflect different manufacturing processes and feature implementations while maintaining functional equivalence for standard switching applications.

Parameter Comparison

Parameter	DMG4466SSSL-13 (Diodes)	BSO110N03MSGXUMA1 (Infineon)	CWDM3011N TR13 PBFREE (Central Semi)	FDS6612A (Fairchild)	STS10N3LH5 (STMicroelectronics)
Manufacturer	Diodes Incorporated	Infineon Technologies	Central Semiconductor Corp	Fairchild Semiconductor	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	10	10	11	8.4	10
Rds On (Max) @ 10V Vgs (mOhm)	23	11	20	22	21
Vgs(th) (Max) @ 250µA (V)	2.4	2	3	3	1
Gate Charge (Qg) @ 10V (nC)	17	20	6.3	7.6	4.6
Power Dissipation (Max) (W)	1.42	1.56	2.5	2.5	2.5
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS3 Compliance	Yes	Yes	Yes	Not specified	Yes
Product Status	Active	Active	Active	Active	Not For New Designs

Engineering Selection Recommendations

BSO110N03MSGXUMA1 (Infineon Technologies OptiMOS™ Series)

This substitute offers superior on-resistance performance at 11 mOhm compared to the 23 mOhm specification of the DMG4466SSSL-13, resulting in reduced power dissipation and improved thermal efficiency. The part maintains 30V Vdss and 10A continuous drain current ratings. Infineon's OptiMOS™ technology provides enhanced switching characteristics. The device is RoHS3 compliant and carries Active product status. Moisture sensitivity level is MSL 3 (168 hours), requiring controlled storage conditions compared to the DMG4466SSSL-13 MSL 1 rating. Packaging is Cut Tape (CT) rather than Tape & Reel (TR).

CWDM3011N TR13 PBFREE (Central Semiconductor Corp)

This substitute provides 11A continuous drain current, exceeding the 10A specification of the DMG4466SSSL-13, with matching 30V Vdss rating. On-resistance is 20 mOhm at 10V Vgs, within acceptable tolerance. Power dissipation capability is 2.5W, providing thermal margin. The device is supplied in Tape & Reel packaging matching the original part format. RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity match the DMG4466SSSL-13 specifications. Product status is Active. Gate charge is significantly lower at 6.3 nC, indicating faster switching characteristics.

FDS6612A (Fairchild Semiconductor PowerTrench® Series)

This substitute maintains 30V Vdss rating with 8.4A continuous drain current, slightly below the 10A specification. On-resistance is 22 mOhm at 10V Vgs, comparable to the original part. Fairchild's PowerTrench® technology provides 2.5W power dissipation capability. The device is RoHS3 compliant and carries Active product status. Gate charge is 7.6 nC at 5V, supporting efficient switching operation. Inventory availability is notably high at 67,600 units. HTSUS classification differs from other substitutes (8542.39.0001 versus 8541.29.0095).

STS10N3LH5 (STMicroelectronics STripFET™ V Series)

This substitute matches the 30V Vdss and 10A continuous drain current specifications of the DMG4466SSSL-13. On-resistance is 21 mOhm at 10V Vgs, within acceptable range. STMicroelectronics' STripFET™ V technology provides 2.5W power dissipation capability. The device is RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity. However, product status is listed as "Not For New Designs," indicating this part is in mature or end-of-life phase. Gate charge is 4.6 nC at 5V, the lowest among all substitutes, enabling superior switching speed. This part is suitable for legacy design support or replacement applications only.

Frequently Asked Questions (FAQ)

Q: Can the BSO110N03MSGXUMA1 directly replace the DMG4466SSSL-13 in existing designs?

A: The BSO110N03MSGXUMA1 is electrically compatible with the DMG4466SSSL-13, matching the 30V Vdss and 10A continuous drain current specifications. Both devices use 8-SOIC surface mount packaging. However, the BSO110N03MSGXUMA1 has MSL 3 moisture sensitivity (168 hours) compared to MSL 1 (Unlimited) for the DMG4466SSSL-13, requiring stricter moisture control during storage and handling. The superior on-resistance (11 mOhm versus 23 mOhm) provides performance improvement. Packaging format differs: BSO110N03MSGXUMA1 is supplied in Cut Tape (CT) while DMG4466SSSL-13 is Tape & Reel (TR).

Q: Which substitute offers the best thermal performance?

A: The CWDM3011N TR13 PBFREE and FDS6612A both provide 2.5W power dissipation capability, compared to 1.42W for the DMG4466SSSL-13, offering superior thermal headroom. The BSO110N03MSGXUMA1 provides 1.56W dissipation. For applications requiring maximum thermal margin, CWDM3011N or FDS6612A are preferred. The CWDM3011N additionally provides 11A continuous drain current, exceeding the 10A specification.

Q: Is the STS10N3LH5 suitable for new product designs?

A: The STS10N3LH5 carries a "Not For New Designs" product status designation. This part is appropriate for legacy design support, replacement applications, or existing production lines only. For new product development, select from BSO110N03MSGXUMA1, CWDM3011N TR13 PBFREE, or FDS6612A, all carrying Active product status.

Q: What are the key differences in gate charge specifications among substitutes?

A: Gate charge varies significantly across substitutes: DMG4466SSSL-13 (17 nC @ 10V), BSO110N03MSGXUMA1 (20 nC @ 10V), CWDM3011N (6.3 nC @ 5V), FDS6612A (7.6 nC @ 5V), and STS10N3LH5 (4.6 nC @ 5V). Lower gate charge enables faster switching transitions and reduced switching losses. Substitutes with lower gate charge (CWDM3011N, FDS6612A, STS10N3LH5) are advantageous in high-frequency switching applications. Gate charge specifications are measured at different Vgs levels, requiring normalization for direct comparison.

Q: Are all substitutes RoHS3 compliant?

A: BSO110N03MSGXUMA1, CWDM3011N TR13 PBFREE, and STS10N3LH5 are explicitly RoHS3 compliant. FDS6612A does not specify RoHS3 compliance in the provided data. All parts carry EAR99 ECCN classification except FDS6612A, which is not specified. For applications requiring RoHS3 certification, confirm compliance documentation with the manufacturer.

Q: What packaging format considerations apply to substitution?

A: All substitutes use 8-SOIC (0.154", 3.90mm Width) surface mount packaging, matching the DMG4466SSSL-13 footprint. However, tape format differs: DMG4466SSSL-13 and CWDM3011N are supplied in Tape & Reel (TR) format, while BSO110N03MSGXUMA1 is Cut Tape (CT). FDS6612A packaging format is not specified. Tape format affects handling, storage, and automated assembly processes. Verify tape format compatibility with production equipment before substitution.

Q: Which substitute provides the lowest on-resistance?

A: The BSO110N03MSGXUMA1 provides the lowest on-resistance at 11 mOhm @ 12.1A, 10V Vgs, compared to 23 mOhm for the DMG4466SSSL-13. Lower on-resistance reduces conduction losses and heat generation. STS10N3LH5 (21 mOhm @ 5A, 10V) and FDS6612A (22 mOhm @ 8.4A, 10V) provide comparable performance to the original part. CWDM3011N (20 mOhm @ 11A, 10V) offers balanced performance with higher current capability.

Q: Can FDS6612A be used in applications requiring 10A continuous drain current?

A: The FDS6612A is rated for 8.4A continuous drain current at 25°C, below the 10A specification of the DMG4466SSSL-13. This substitute is not suitable for applications requiring sustained 10A operation. Use FDS6612A only in applications where peak current does not exceed 8.4A or where duty cycle permits thermal management of lower average current. For full 10A capability, select BSO110N03MSGXUMA1, CWDM3011N TR13 PBFREE, or STS10N3LH5.

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