DMG4435SSS-13 Equivalent & Substitute Parts

Part Overview

The DMG4435SSS-13 is a P-Channel 30V MOSFET manufactured by Diodes Incorporated, rated for 7.3A continuous drain current in an 8-SOIC surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, gate threshold voltage, and thermal characteristics while accommodating the 8-SOIC package footprint.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	7.3	A (Ta)
Rds On (Max) @ Id, Vgs	16	mOhm @ 11A, 20V
Vgs(th) (Max) @ Id	2.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35.4	nC @ 10V
Vgs (Max)	±25	V
Input Capacitance (Ciss) (Max) @ Vds	1614	pF @ 15V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the DMG4435SSS-13 is determined by strict equivalence across the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): Equal to or greater than 7.3A
Gate Threshold Voltage (Vgs(th)): Compatible with 2.5V @ 250µA specification
Maximum Gate Supply Voltage (Vgs): ±20V or ±25V
Package Type: 8-SOIC surface mount configuration
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS3 Compliance: Required

Secondary Compatibility Parameters:

Rds On characteristics at specified gate and drain conditions
Gate Charge (Qg) and Input Capacitance (Ciss) for switching performance
Power Dissipation rating at ambient temperature (Ta)

All substitute parts listed maintain the 8-SOIC package footprint and surface mount mounting type. Electrical parameters across all substitutes meet or exceed the minimum requirements of the DMG4435SSS-13, ensuring direct functional replacement in existing circuit designs.

Parameter Comparison

Parameter	DMG4435SSS-13	FDS4435BZ	IRF7416TRPBF	PJL9413_R2_00001	RRH090P03GZETB	RRH100P03GZETB	SI4435DDY-T1-GE3	SI4835DDY-T1-E3	SI4835DDY-T1-GE3
Manufacturer	Diodes Inc.	onsemi	Infineon	Panjit	Rohm	Rohm	Vishay	Vishay	Vishay
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Not For New Designs	Active	Active	Active
Vdss (V)	30	30	30	30	30	30	30	30	30
Id @ 25°C (A)	7.3	8.8	10	10	9	10	11.4	13	13
Rds On (mOhm)	16 @ 11A, 20V	20 @ 8.8A, 10V	20 @ 5.6A, 10V	15.5 @ 10A, 10V	15.4 @ 9A, 10V	12.6 @ 10A, 10V	24 @ 9.1A, 10V	18 @ 10A, 10V	18 @ 10A, 10V
Vgs(th) (V)	2.5 @ 250µA	3 @ 250µA	1 @ 250µA	2.5 @ 250µA	2.5 @ 1mA	2.5 @ 1mA	3 @ 250µA	3 @ 250µA	3 @ 250µA
Vgs (Max) (V)	±25	±25	±20	±20	±20	±20	±20	±25	±25
Qg (nC)	35.4 @ 10V	40 @ 10V	92 @ 10V	14 @ 4.5V	56 @ 10V	68 @ 10V	50 @ 10V	65 @ 10V	65 @ 10V
Ciss (pF)	1614 @ 15V	1845 @ 15V	1700 @ 25V	1556 @ 15V	3000 @ 10V	3600 @ 10V	1350 @ 15V	1960 @ 15V	1960 @ 15V
Power Dissipation (W)	2.5 (Ta)	2.5 (Ta)	2.5 (Ta)	1.7 (Ta)	0.65 (Ta)	0.65 (Ta)	2.5 (Ta), 5 (Tc)	2.5 (Ta), 5.6 (Tc)	2.5 (Ta), 5.6 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL	1	1	1	N/A	1	1	1	1	1

Engineering Selection Recommendations

Primary Substitutes (Active Status, Recommended for New Designs):

FDS4435BZ (onsemi) and SI4435DDY-T1-GE3 (Vishay Siliconix) are the preferred substitutes for the obsolete DMG4435SSS-13. Both devices are in active production status with ROHS3 compliance and MSL 1 rating. FDS4435BZ provides 8.8A continuous drain current with 20mOhm Rds On, while SI4435DDY-T1-GE3 delivers 11.4A with enhanced thermal performance (5W at Tc). Both maintain the 30V Vdss specification and -55°C to 150°C operating range.

IRF7416TRPBF (Infineon Technologies) is an active alternative offering 10A continuous drain current with HEXFET technology. This device provides superior gate charge characteristics (92nC) and is suitable for applications requiring higher current capacity. Vgs maximum is ±20V, which is compatible with standard gate drive circuits.

Secondary Substitutes (Active Status, Suitable for Specific Applications):

SI4835DDY-T1-E3 and SI4835DDY-T1-GE3 (Vishay Siliconix) both provide 13A continuous drain current with enhanced thermal dissipation (5.6W at Tc). These devices are recommended for applications requiring higher current handling or improved thermal performance. Both maintain full compliance with RoHS3 and MSL 1 specifications.

PJL9413_R2_00001 (Panjit International Inc.) is an active device offering 10A continuous drain current with the lowest gate charge (14nC @ 4.5V) among all substitutes, making it suitable for high-frequency switching applications. Power dissipation is rated at 1.7W (Ta).

Not Recommended for New Designs:

RRH090P03GZETB and RRH100P03GZETB (Rohm Semiconductor) are classified as "Not For New Designs" and should not be selected for new circuit implementations. These devices are available for legacy system support only.

Frequently Asked Questions (FAQ)

Q: Can the DMG4435SSS-13 be directly replaced with any of the listed substitutes?

A: Yes, all listed active-status substitutes are electrically and mechanically compatible with the DMG4435SSS-13. All devices share the same 30V Vdss rating, 8-SOIC package footprint, and -55°C to 150°C operating temperature range. Pin configuration and gate drive requirements are identical across all substitutes.

Q: What is the primary reason for substitution?

A: The DMG4435SSS-13 is classified as obsolete. Substitute parts are required to maintain production continuity and support new designs. All recommended substitutes are in active production status with confirmed availability.

Q: How do I select between FDS4435BZ and SI4435DDY-T1-GE3?

A: Both are primary substitutes with active status. FDS4435BZ (onsemi) offers 8.8A current rating and is suitable for standard applications. SI4435DDY-T1-GE3 (Vishay) provides 11.4A current rating and superior thermal performance (5W at Tc), making it preferable for high-power or thermally constrained designs.

Q: Are there any gate drive voltage differences between substitutes?

A: Yes. Most substitutes accept ±20V maximum gate supply voltage, while FDS4435BZ and SI4835DDY variants accept ±25V. The DMG4435SSS-13 specification is ±25V. Verify gate drive circuit compliance with the selected substitute's Vgs(Max) rating.

Q: What is the significance of Rds On differences?

A: Rds On (on-state resistance) directly affects power dissipation and thermal performance. Lower Rds On values reduce conduction losses. PJL9413_R2_00001 offers the lowest Rds On (15.5mOhm @ 10A, 10V), while SI4435DDY-T1-GE3 has higher Rds On (24mOhm @ 9.1A, 10V). Select based on thermal budget and efficiency requirements.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitutes carry ROHS3 compliance certification, meeting environmental and regulatory requirements equivalent to the original DMG4435SSS-13.

Q: What does MSL 1 (Unlimited) mean?

A: MSL 1 indicates the lowest moisture sensitivity level, allowing unlimited shelf life without special storage or handling requirements. PJL9413_R2_00001 is listed as "Not Applicable" for MSL, which does not indicate a compatibility issue but rather a different classification methodology by the manufacturer.

Q: Can I use RRH090P03GZETB or RRH100P03GZETB for new designs?

A: No. Both Rohm devices are classified as "Not For New Designs." These parts are available only for legacy system support and maintenance. Use active-status alternatives for all new circuit implementations.

Q: How do gate charge (Qg) differences affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower Qg values reduce switching losses and allow faster switching speeds. PJL9413_R2_00001 has the lowest Qg (14nC @ 4.5V), while IRF7416TRPBF has the highest (92nC @ 10V). Select based on switching frequency and gate driver capability.

Q: Are packaging options different between substitutes?

A: All substitutes use the 8-SOIC (0.154", 3.90mm Width) package. However, some are supplied in Cut Tape (CT) & Digi-Reel® format, while others use Tape & Reel (TR). Verify packaging format compatibility with your procurement and assembly processes.

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