DMC964040R Equivalent & Substitute Parts

Part Overview

The DMC964040R is a pre-biased dual NPN bipolar transistor manufactured by Panasonic Electronic Components in the SSMini6-F3-B surface mount package. This component integrates two NPN transistors with internal base and emitter resistors, designed for switching and logic applications requiring integrated biasing networks. The part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active manufacturers including Diodes Incorporated, onsemi, Rohm Semiconductor, Fairchild Semiconductor, Nexperia USA Inc., and Toshiba Semiconductor and Storage.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V	—
Vce Saturation (Max) @ Ib, Ic	250	mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	500	nA
Power - Max	125	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
RoHS Status	RoHS Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the DMC964040R is determined by strict equivalence across the following critical parameters:

Primary Matching Criteria:

Transistor configuration: 2 NPN - Pre-Biased (Dual)
Maximum collector current: 100 mA
Maximum collector-emitter breakdown voltage: 50 V
Base resistor (R1): 10 kOhms
Emitter-base resistor (R2): 47 kOhms
Surface mount packaging compatible with SOT-563 or SOT-666

Secondary Compatibility Factors:

DC current gain (hFE) minimum specification
Vce saturation voltage
Collector cutoff current
Power dissipation rating
RoHS and MSL compliance

Substitute parts are grouped into two categories:

Category A - Direct Dual NPN Equivalents: Parts with identical transistor configuration (2 NPN - Pre-Biased), matching resistor values (R1 = 10kOhms, R2 = 47kOhms), and equivalent electrical performance. These include DDC114YH-7, EMH9T2R, and RN1907FE,LF(CT.

Category B - Functional Alternatives with Parameter Variations: Parts with 2 NPN - Pre-Biased configuration but differing resistor networks or electrical characteristics. These include DDC114EH-7, DDC114TH-7, and DDC144EH-7. Additionally, EMD4DXV6T5G and NSBC114YDXV6T1G provide functional equivalence despite mixed transistor types or different power ratings, suitable for applications where the specific resistor configuration is not critical.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce Breakdown (Max) V	R1 (Base) kOhms	R2 (Emitter-Base) kOhms	hFE (Min)	Vce Sat (Max) mV	Power (Max) mW	Frequency MHz	Product Status
DMC964040R	Panasonic	2 NPN - Pre-Biased	100	50	10	47	80 @ 5mA, 10V	250 @ 500µA, 10mA	125	—	Discontinued
DDC114EH-7	Diodes Incorporated	2 NPN - Pre-Biased	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	150	250	Active
DDC114TH-7	Diodes Incorporated	2 NPN - Pre-Biased	100	50	10	—	100 @ 1mA, 5V	300 @ 100µA, 1mA	150	250	Active
DDC114YH-7	Diodes Incorporated	2 NPN - Pre-Biased	100	50	10	47	68 @ 10mA, 5V	300 @ 250µA, 5mA	150	250	Active
DDC144EH-7	Diodes Incorporated	2 NPN - Pre-Biased	100	50	47	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	150	250	Active
EMD4DXV6T5G	onsemi	1 NPN, 1 PNP - Pre-Biased	100	50	47, 10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	—	Obsolete
EMH9FHAT2R	Rohm Semiconductor	2 NPN - Pre-Biased	100	—	10	47	68 @ 5mA, 5V	300 @ 250µA, 5mA	150	250	Not For New Designs
EMH9T2R	Rohm Semiconductor	2 NPN - Pre-Biased	100	50	10	47	68 @ 5mA, 5V	300 @ 250µA, 5mA	150	250	Active
NSBC114YDXV6T1G	Fairchild Semiconductor	2 NPN - Pre-Biased	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	—	Active
PEMD9,115	Nexperia USA Inc.	1 NPN, 1 PNP - Pre-Biased	100	50	10	47	100 @ 5mA, 5V	100 @ 250µA, 5mA	300	—	Not For New Designs
RN1907FE,LF(CT	Toshiba Semiconductor and Storage	2 NPN - Pre-Biased	100	50	10	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	100	250	Active

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status, Full Compliance):

EMH9T2R (Rohm Semiconductor) is the preferred substitute. This part maintains 2 NPN - Pre-Biased configuration with matching R1 (10kOhms) and R2 (47kOhms) resistor values. It meets 50V breakdown voltage, 100mA collector current, and 150mW power rating specifications. The part is RoHS3 compliant, MSL 1, and currently in active production with high inventory availability (90,300 pcs).

DDC114YH-7 (Diodes Incorporated) provides equivalent functionality with identical resistor configuration (R1 = 10kOhms, R2 = 47kOhms) and electrical ratings. This part is active, RoHS3 compliant, and offers 250MHz transition frequency. Inventory is available (24,100 pcs).

RN1907FE,LF(CT (Toshiba Semiconductor and Storage) is an active substitute with matching resistor values and electrical characteristics. This part is RoHS3 compliant and offers 250MHz transition frequency with lower power dissipation (100mW) compared to the original specification (125mW).

Secondary Substitutes (Functional Equivalence with Parameter Variations):

DDC114EH-7 and DDC114TH-7 (Diodes Incorporated) are active parts with 2 NPN - Pre-Biased configuration and 50V/100mA ratings. DDC114EH-7 features R2 = 10kOhms (differs from original 47kOhms), while DDC114TH-7 has unspecified R2. Both offer 250MHz transition frequency and 150mW power rating. These parts are suitable for applications where the specific emitter-base resistor value is not critical.

DDC144EH-7 (Diodes Incorporated) features R1 = 47kOhms and R2 = 47kOhms, differing from the original R1 = 10kOhms specification. This part is active, RoHS3 compliant, with 250MHz transition frequency and high inventory (72,300 pcs). Selection requires verification that the higher base resistor value is compatible with the application circuit.

Parts Not Recommended for New Designs:

EMH9FHAT2R (Rohm Semiconductor) carries "Not For New Designs" status despite matching resistor configuration and electrical performance. EMD4DXV6T5G (onsemi) is obsolete. PEMD9,115 (Nexperia USA Inc.) is marked "Not For New Designs" and features mixed NPN/PNP configuration.

Compliance Considerations:

All recommended substitutes are RoHS3 compliant and MSL 1 (Unlimited moisture sensitivity). EMH9T2R and RN1907FE,LF(CT carry REACH Unaffected status. All parts maintain EAR99 export classification.

Frequently Asked Questions (FAQ)

Q: Can DDC114EH-7 directly replace DMC964040R?

A: DDC114EH-7 is functionally compatible for most applications. Both parts are 2 NPN - Pre-Biased with 100mA collector current and 50V breakdown voltage. The primary difference is the emitter-base resistor (R2): DDC114EH-7 specifies 10kOhms versus the original 47kOhms. This affects the biasing network and switching characteristics. Substitution is valid only if the application circuit tolerates the modified bias resistor value. DDC114EH-7 is active and RoHS3 compliant.

Q: What is the difference between DDC114YH-7 and DDC144EH-7?

A: Both are Diodes Incorporated 2 NPN - Pre-Biased parts with 100mA/50V ratings and 250MHz transition frequency. The key difference is the base resistor (R1): DDC114YH-7 has R1 = 10kOhms (matching the original DMC964040R), while DDC144EH-7 has R1 = 47kOhms. DDC114YH-7 is the closer electrical match to the original part. DDC144EH-7 offers higher inventory availability (72,300 pcs) and may be preferred if the application circuit design accommodates the higher base resistor value.

Q: Why is EMH9T2R recommended over other substitutes?

A: EMH9T2R (Rohm Semiconductor) is the primary recommendation because it maintains exact resistor configuration (R1 = 10kOhms, R2 = 47kOhms) matching the original DMC964040R. The part is currently in active production with the highest inventory availability (90,300 pcs), ensuring long-term supply continuity. It meets all electrical specifications: 100mA collector current, 50V breakdown voltage, 150mW power rating, and 250MHz transition frequency. RoHS3 compliance and MSL 1 rating confirm environmental and handling compatibility.

Q: Can I use NSBC114YDXV6T1G as a substitute?

A: NSBC114YDXV6T1G (Fairchild Semiconductor) is functionally equivalent with matching 2 NPN - Pre-Biased configuration, R1 = 10kOhms, R2 = 47kOhms, and electrical characteristics (80 hFE @ 5mA, 10V; 250mV Vce saturation). The part is currently active. However, it offers 500mW power dissipation compared to the original 125mW specification, indicating a different package or thermal design. This part is suitable for applications where higher power handling is acceptable or beneficial.

Q: What is the significance of the "Not For New Designs" status?

A: Parts marked "Not For New Designs" (EMH9FHAT2R, PEMD9,115) are in mature or declining production phases. While electrically functional and available in current inventory, manufacturers do not recommend their use in new product development due to potential future discontinuation. For new designs, select from parts with "Active" status: EMH9T2R, DDC114YH-7, DDC114EH-7, DDC114TH-7, DDC144EH-7, NSBC114YDXV6T1G, or RN1907FE,LF(CT.

Q: Are there package compatibility issues between substitutes?

A: All recommended substitutes are surface mount parts compatible with SOT-563 or SOT-666 packages. The original DMC964040R uses SSMini6-F3-B packaging. Substitute parts use SOT-563 (Diodes Incorporated, onsemi, Fairchild), EMT6 (Rohm Semiconductor), or ES6 (Toshiba) packages. These packages are physically and electrically equivalent for PCB layout purposes. Verify footprint compatibility with your specific PCB design before final selection.

Q: Why is EMD4DXV6T5G listed as a substitute if it is obsolete?

A: EMD4DXV6T5G is included for reference purposes as it appears in the original DMC964040R substitute list. However, this onsemi part is marked obsolete and should not be selected for new applications. The part features mixed NPN/PNP configuration (1 NPN, 1 PNP) rather than dual NPN, making it functionally different from the original. Current inventory exists (45,200 pcs), but long-term availability is not assured.

Q: How do I verify that a substitute part will work in my application?

A: Verification requires comparison of three parameter categories: (1) Transistor configuration must be 2 NPN - Pre-Biased; (2) Electrical ratings must meet or exceed application requirements (100mA collector current, 50V breakdown voltage minimum); (3) Resistor values (R1 and R2) must match the original or be compatible with your circuit design. Cross-reference the substitute part's datasheet against your application schematic. If the substitute has different resistor values, recalculate bias point and switching characteristics to confirm circuit performance.

Q: What is the difference between Vce saturation specifications across substitutes?

A: Vce saturation voltage varies across substitutes due to different transistor designs and measurement conditions. The original DMC964040R specifies 250mV @ 500µA base current, 10mA collector current. Most substitutes specify 300mV under different test conditions (typically 250µA base current, 5mA collector current). Lower Vce saturation indicates better switching efficiency and lower power dissipation in saturated state. For switching applications, verify that the substitute's Vce saturation specification is acceptable for your circuit's voltage drop budget.

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