DMC3028LSDX-13 Equivalent & Substitute Parts

Part Overview

The DMC3028LSDX-13 is an active-status N and P-Channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in 8-SOIC packaging. This dual-channel logic-level gate device operates at 30V drain-to-source voltage with continuous drain currents of 5.5A (N-channel) and 5.8A (P-channel), delivering 1.2W maximum power dissipation across an operating temperature range of -55°C to 150°C. The component is ROHS3 compliant with MSL 1 moisture sensitivity rating.

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters, maintaining compatible package geometry, and preserving functional configuration as a dual-channel MOSFET array with logic-level gate operation.

Key Parameters

Parameter	Value	Unit
Configuration	N and P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	5.5A / 5.8A	A
On-Resistance (Rds On) @ Id, Vgs	27	mOhm @ 6A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	3	V @ 250µA
Gate Charge (Qg) @ Vgs	13.2	nC @ 10V
Input Capacitance (Ciss) @ Vds	641	pF @ 15V
Maximum Power Dissipation	1.2	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
FET Feature	Logic Level Gate	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the DMC3028LSDX-13 are qualified based on the following substitution criteria:

Electrical Compatibility:

Drain-to-source voltage (Vdss) equal to or exceeding 30V
Continuous drain current (Id) at 25°C meeting or exceeding 5.5A (N-channel) and 5.8A (P-channel)
On-resistance (Rds On) at specified conditions compatible with or lower than 27mOhm
Gate threshold voltage (Vgs(th)) within acceptable logic-level gate operation range
Gate charge (Qg) and input capacitance (Ciss) within acceptable switching performance parameters
Maximum power dissipation equal to or exceeding 1.2W

Mechanical Compatibility:

Surface mount technology
8-pin SOIC package with 0.154" (3.90mm) width
Compatible pin configuration for N and P-Channel dual-channel operation

Regulatory & Environmental Compliance:

ROHS3 compliance
MSL 1 moisture sensitivity rating
Operating temperature range spanning -55°C to 150°C

All three substitute parts (AO4629, IRF9389TRPBF, SH8M5TB1) meet these criteria and are classified as manufacturer-recommended equivalents.

Parameter Comparison

Parameter	DMC3028LSDX-13 (Diodes)	AO4629 (Alpha & Omega)	IRF9389TRPBF (Infineon)	SH8M5TB1 (Rohm)
Manufacturer	Diodes Incorporated	Alpha & Omega Semiconductor Inc.	Infineon Technologies	Rohm Semiconductor
Configuration	N and P-Channel	N and P-Channel, Common Drain	N and P-Channel	N and P-Channel
Vdss	30V	30V	30V	30V
Id @ 25°C (N-ch / P-ch)	5.5A / 5.8A	6A / 5.5A	6.8A / 4.6A	6A / 7A
Rds On (Max) @ Id, Vgs	27mOhm @ 6A, 10V	30mOhm @ 6A, 10V	27mOhm @ 6.8A, 10V	30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	2.4V @ 250µA	2.3V @ 10µA	2.5V @ 1mA
Gate Charge (Qg) @ Vgs	13.2nC @ 10V	6.3nC @ 10V	14nC @ 10V	7.2nC @ 5V
Input Capacitance (Ciss) @ Vds	641pF @ 15V	310pF @ 15V	398pF @ 15V	520pF @ 10V
Power - Max	1.2W	2W	2W	2W
Operating Temperature (TJ)	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
Package / Case	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

All three substitute parts are active-status components with ROHS3 compliance and MSL 1 moisture sensitivity ratings, matching the regulatory and environmental profile of the DMC3028LSDX-13.

AO4629 (Alpha & Omega Semiconductor Inc.): The AO4629 provides equivalent on-resistance performance at 30mOhm and exceeds the drain current specification with 6A (N-channel) and 5.5A (P-channel). Maximum power dissipation increases to 2W, providing additional thermal margin. Gate charge is reduced to 6.3nC, and input capacitance decreases to 310pF, resulting in improved switching efficiency. This part is available in Cut Tape and Digi-Reel packaging with 15,400 units in stock.

IRF9389TRPBF (Infineon Technologies HEXFET® Series): The IRF9389TRPBF delivers the highest N-channel drain current at 6.8A with matching on-resistance of 27mOhm. The HEXFET® series designation indicates optimized switching characteristics. Gate threshold voltage is reduced to 2.3V, supporting lower gate drive requirements. Maximum power dissipation is 2W. Gate charge is 14nC, slightly elevated compared to the original part. This part is available in Cut Tape and Digi-Reel packaging with 24,795 units in stock.

SH8M5TB1 (Rohm Semiconductor): The SH8M5TB1 provides the highest P-channel drain current at 7A with 30mOhm on-resistance. Maximum power dissipation is 2W. Gate charge is reduced to 7.2nC at 5V, and input capacitance is 520pF at 10V. Operating temperature maximum is specified at 150°C (TJ). This part is available in Cut Tape packaging with 1,054 units in stock.

All three parts maintain 8-SOIC package compatibility and logic-level gate operation. Selection should be based on specific application requirements for drain current distribution between channels, switching speed requirements, and thermal design considerations.

Frequently Asked Questions (FAQ)

Q: Can the AO4629 directly replace the DMC3028LSDX-13 in existing PCB designs?

A: Yes. The AO4629 maintains identical 8-SOIC package geometry (0.154", 3.90mm width) and pin configuration for N and P-Channel dual-channel operation. All electrical parameters meet or exceed the DMC3028LSDX-13 specifications. No PCB layout modifications are required.

Q: What is the primary difference between the IRF9389TRPBF and the original DMC3028LSDX-13?

A: The IRF9389TRPBF is part of Infineon's HEXFET® series and provides higher N-channel drain current (6.8A versus 5.5A) with identical on-resistance (27mOhm). Gate threshold voltage is lower (2.3V versus 3V), enabling operation with reduced gate drive voltage. Package and configuration remain identical.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The AO4629, IRF9389TRPBF, and SH8M5TB1 are all ROHS3 compliant with MSL 1 moisture sensitivity ratings, matching the environmental and regulatory profile of the DMC3028LSDX-13.

Q: Which substitute part offers the lowest gate charge?

A: The AO4629 provides the lowest gate charge at 6.3nC @ 10V, compared to 13.2nC for the original part. This results in faster switching transitions and reduced gate drive power consumption.

Q: What is the operating temperature range for all parts?

A: The DMC3028LSDX-13, AO4629, and IRF9389TRPBF all operate from -55°C to 150°C (TJ). The SH8M5TB1 specifies a maximum operating temperature of 150°C (TJ), consistent with the other parts.

Q: Can the SH8M5TB1 be used in applications requiring high P-channel current?

A: Yes. The SH8M5TB1 provides the highest P-channel drain current at 7A, exceeding the original part's 5.8A specification. This part is suitable for applications with asymmetric channel current requirements favoring P-channel operation.

Q: Are there packaging format differences between the substitute parts?

A: The AO4629 and IRF9389TRPBF are available in Cut Tape and Digi-Reel formats. The SH8M5TB1 is available in Cut Tape format. All three maintain the same 8-SOIC package case with 0.154" (3.90mm) width. The original DMC3028LSDX-13 is supplied in Tape & Reel format.

Q: What is the maximum power dissipation difference between the original and substitute parts?

A: The DMC3028LSDX-13 is rated at 1.2W maximum power dissipation. All three substitute parts (AO4629, IRF9389TRPBF, SH8M5TB1) are rated at 2W, providing 67% additional thermal headroom for the same application.

Q: Which substitute part has the lowest input capacitance?

A: The AO4629 provides the lowest input capacitance at 310pF @ 15V, compared to 641pF for the original part. Lower input capacitance reduces gate drive requirements and improves high-frequency switching performance.

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