DMC204010R Equivalent & Substitute Parts

Part Overview

The DMC204010R is a dual NPN bipolar junction transistor array manufactured by Panasonic Electronic Components, designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 150MHz transition frequency in a surface mount Mini6-G4-B package. The part is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA	—
Power - Max	300	mW
Frequency - Transition	150	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	SOT-23-6	—
RoHS Status	RoHS Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the DMC204010R is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor configuration: 2 NPN (Dual) array
Maximum collector current: 100mA or greater
Collector-emitter breakdown voltage: 50V or greater
Maximum power dissipation: 300mW or greater
Transition frequency: 150MHz or greater
Operating temperature range: 150°C or greater
Surface mount packaging with compatible pinout
RoHS compliance status

Secondary Compatibility Factors:

Vce saturation characteristics within acceptable operating ranges
DC current gain (hFE) sufficient for intended amplification applications
Moisture sensitivity level MSL 1 or equivalent

Substitute parts are grouped based on whether they meet or exceed all primary criteria while maintaining functional equivalence in dual NPN transistor array topology.

Parameter Comparison

Parameter	DMC204010R (Main)	BC847DS,115	BCM847DS,115	BCM847DS,135	IMX1T110	UMX1NFHATN
Manufacturer	Panasonic	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Rohm Semiconductor	Rohm Semiconductor
Transistor Type	2 NPN (Dual)	2 NPN (Dual)	2 NPN (Dual) Matched Pair	2 NPN (Dual) Matched Pair	2 NPN (Dual)	2 NPN (Dual)
Ic (Max)	100 mA	100 mA	100 mA	100 mA	150 mA	150 mA
Vce Breakdown (Max)	50 V	45 V	45 V	45 V	50 V	50 V
Power - Max	300 mW	380 mW	380 mW	380 mW	300 mW	150 mW
Frequency - Transition	150 MHz	100 MHz	250 MHz	250 MHz	180 MHz	180 MHz
Operating Temperature (TJ)	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package / Case	SOT-23-6	SC-74, SOT-457	SC-74, SOT-457	SC-74, SOT-457	SC-74, SOT-457	6-TSSOP, SC-88, SOT-363
RoHS Status	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Discontinued	Active	Active	Active	Active	Active

Engineering Selection Recommendations

BC847DS,115 (Nexperia USA Inc.)

This part meets the dual NPN transistor array requirement with 100mA maximum collector current and 150°C operating temperature. The 45V collector-emitter breakdown voltage is 5V lower than the main part specification. The 100MHz transition frequency is below the 150MHz specification of the DMC204010R. This part is active and RoHS3 compliant. Automotive qualification (AEC-Q101) is provided.

BCM847DS,115 (Nexperia USA Inc.)

This matched pair dual NPN transistor array provides 100mA maximum collector current and 150°C operating temperature. The 45V collector-emitter breakdown voltage is 5V lower than specified. The 250MHz transition frequency exceeds the 150MHz requirement. This part is active, RoHS3 compliant, and carries automotive qualification (AEC-Q100). Matched pair configuration provides enhanced performance for differential applications.

BCM847DS,135 (Nexperia USA Inc.)

This matched pair dual NPN transistor array is functionally identical to BCM847DS,115 with 100mA maximum collector current, 45V collector-emitter breakdown voltage, and 250MHz transition frequency. The part is active, RoHS3 compliant, and AEC-Q100 qualified. Higher inventory availability (34,702 units) compared to other Nexperia variants.

IMX1T110 (Rohm Semiconductor)

This dual NPN transistor array exceeds the main part specifications with 150mA maximum collector current and 50V collector-emitter breakdown voltage matching the original specification. The 180MHz transition frequency exceeds the 150MHz requirement. Maximum power dissipation of 300mW matches the original specification. The part is active and RoHS3 compliant. Highest inventory availability (1,028,200 units).

UMX1NFHATN (Rohm Semiconductor)

This dual NPN transistor array provides 150mA maximum collector current and 50V collector-emitter breakdown voltage. The 180MHz transition frequency exceeds the 150MHz requirement. Maximum power dissipation of 150mW is 50% lower than the original specification. The part is active, RoHS3 compliant, and carries automotive qualification (AEC-Q101). Package is 6-TSSOP/SC-88/SOT-363, differing from the original SOT-23-6.

Frequently Asked Questions (FAQ)

Q: Can BC847DS,115 be used as a direct replacement for DMC204010R?

A: BC847DS,115 meets the dual NPN transistor array configuration and 100mA collector current specification. However, the 45V collector-emitter breakdown voltage is 5V lower than the DMC204010R specification, and the 100MHz transition frequency is below the 150MHz requirement. Application-specific voltage and frequency margins determine suitability.

Q: What is the difference between BC847DS,115 and BCM847DS variants?

A: BC847DS,115 is a standard dual NPN transistor array. BCM847DS,115 and BCM847DS,135 are matched pair configurations with tighter parameter tolerances, providing superior performance in differential amplifier and precision applications. Both BCM847DS variants feature 250MHz transition frequency compared to 100MHz for the standard BC847DS,115.

Q: Why does UMX1NFHATN have lower maximum power dissipation than other substitutes?

A: UMX1NFHATN is specified at 150mW maximum power dissipation compared to 300mW for the DMC204010R and other substitutes. This reflects the thermal characteristics of the 6-TSSOP/SC-88/SOT-363 package, which has different thermal properties than the SOT-23-6 package. Applications requiring sustained high power dissipation should verify thermal performance.

Q: Are all substitute parts RoHS compliant?

A: All identified substitute parts are RoHS3 compliant. The DMC204010R is RoHS compliant. All parts meet environmental compliance requirements for lead-free manufacturing.

Q: What is the significance of matched pair designation in BCM847DS variants?

A: Matched pair transistors have tightly controlled parameter matching between the two transistors in the array. This is critical for differential amplifier circuits, precision current mirrors, and balanced switching applications where transistor parameter mismatch introduces errors. Standard dual transistor arrays (BC847DS,115, IMX1T110) do not guarantee matched parameters.

Q: Can IMX1T110 be used in applications requiring the original SOT-23-6 package?

A: IMX1T110 uses SC-74/SOT-457 package, which is physically and electrically compatible with SOT-23-6 pinout. Both are 6-pin surface mount packages with identical pin assignments for dual NPN transistor arrays. PCB layout verification is required to confirm mechanical fit.

Q: What is the inventory status of substitute parts?

A: BCM847DS,135 has the highest inventory among Nexperia variants (34,702 units). IMX1T110 has exceptional availability (1,028,200 units). BC847DS,115 and UMX1NFHATN have moderate availability (3,588 and 16,904 units respectively). Availability should be confirmed with suppliers for production requirements.

Q: Does the 5V difference in collector-emitter breakdown voltage between DMC204010R and Nexperia substitutes affect circuit operation?

A: The 45V specification of Nexperia parts (BC847DS,115, BCM847DS,115, BCM847DS,135) is lower than the 50V specification of DMC204010R. Applications operating at voltages below 45V are unaffected. Applications requiring the full 50V rating should use IMX1T110 or UMX1NFHATN from Rohm Semiconductor.

Q: Are automotive-qualified parts required for this application?

A: Automotive qualification (AEC-Q100 or AEC-Q101) is provided on BCM847DS variants and UMX1NFHATN. BC847DS,115 carries AEC-Q101 qualification. IMX1T110 does not specify automotive qualification. Selection depends on application requirements and end-use environment specifications.

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