DMA964030R Equivalent & Substitute Parts

Part Overview

The DMA964030R is a pre-biased dual PNP bipolar transistor manufactured by Panasonic Electronic Components in the SSMini6-F3-B surface mount package. This component integrates two PNP transistors with internal base and emitter-base resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current.

The DMA964030R is discontinued at DiGi Electronics. Equivalent and substitute parts are available from alternative manufacturers including Rohm Semiconductor, onsemi, and Toshiba Semiconductor and Storage. Substitution is necessary to maintain design continuity and ensure component availability for production and repair applications.

Substiute Parts

DMA964030R

Panasonic Electronic ComponentsIn Stock: 8234DMA964030R Datasheet

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EMB2FHAT2R

Rohm SemiconductorIn Stock: 9005EMB2FHAT2R Datasheet

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EMB2T2R

Rohm SemiconductorIn Stock: 7580EMB2T2R Datasheet

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NSBA144EDXV6T5G

onsemiIn Stock: 53371NSBA144EDXV6T5G Datasheet

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RN2904FE,LF

Toshiba Semiconductor and StorageIn Stock: 4851RN2904FE,LF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMA964030R is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Parameters:

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1): 47kOhms
• Resistor - Emitter Base (R2): 47kOhms
• Current - Collector Cutoff (Max): 500nA
• Mounting Type: Surface Mount
• Package / Case: SOT-563 or SOT-666

Compatible Variations: Substitute parts may differ in the following parameters while maintaining functional equivalence:

• DC Current Gain (hFE) (Min): Minimum 68 (original: 80)
• Vce Saturation (Max): Up to 300mV (original: 250mV)
• Power - Max: 100mW to 357mW (original: 125mW)
• Frequency - Transition: 0MHz to 250MHz (original: not specified)
• Product Status: Active, Not For New Designs, or Obsolete
• RoHS Status: RoHS Compliant or ROHS3 Compliant
• Supplier Device Package: SSMini6-F3-B, EMT6, SOT-563, or ES6

All substitute parts listed maintain the core electrical and mechanical characteristics required for direct replacement in applications designed for the DMA964030R.

Parameter Comparison

Engineering Selection Recommendations

EMB2T2R (Rohm Semiconductor) is the primary recommended substitute for new designs. This part maintains all mandatory electrical parameters, is currently in active product status, and carries ROHS3 compliance with REACH unaffected designation. The EMB2T2R offers enhanced frequency performance at 250MHz and increased power dissipation capability at 150mW, providing design margin for switching applications.

RN2904FE,LF (Toshiba Semiconductor and Storage) is an alternative active substitute suitable for applications where the original 125mW power specification is sufficient. This part maintains the original DC current gain specification of 80 and offers 200MHz transition frequency. The RN2904FE,LF is available in active product status with ROHS3 compliance.

EMB2FHAT2R (Rohm Semiconductor) is available for applications requiring automotive-grade qualification. This part carries AEC-Q101 certification and is suitable for automotive switching applications. Product status is listed as Not For New Designs; use is appropriate for legacy system support and repair applications.

NSBA144EDXV6T5G (onsemi) is available with automotive-grade qualification and AEC-Q101 certification. This part is listed as obsolete and should be used only when existing inventory is available or for legacy system maintenance. The higher power dissipation rating of 357mW provides additional thermal margin in power-constrained applications.

Selection between active substitutes (EMB2T2R and RN2904FE,LF) depends on packaging preference and supply chain availability. Both parts satisfy all mandatory electrical and mechanical requirements for direct replacement.

Frequently Asked Questions (FAQ)

Q: Can EMB2T2R directly replace DMA964030R without circuit modification?

A: Yes. The EMB2T2R maintains all mandatory electrical parameters: dual PNP pre-biased configuration, 100mA maximum collector current, 50V collector-emitter breakdown voltage, 47kOhm base and emitter-base resistors, and 500nA maximum collector cutoff current. Surface mount package compatibility (SOT-563, SOT-666) is identical. No circuit modification is required.

Q: What is the difference between EMB2FHAT2R and EMB2T2R?

A: Both parts are manufactured by Rohm Semiconductor and share identical electrical specifications. The primary differences are: EMB2FHAT2R carries automotive-grade qualification (AEC-Q101) and is listed as Not For New Designs; EMB2T2R is in active product status without automotive qualification. For new designs, EMB2T2R is preferred. For automotive applications requiring AEC-Q101 certification, EMB2FHAT2R is appropriate.

Q: Why does RN2904FE,LF have lower maximum power rating (100mW) than the original DMA964030R (125mW)?

A: The RN2904FE,LF is rated at 100mW maximum power dissipation, which is lower than the original 125mW specification. This part remains functionally equivalent because the power rating represents the maximum safe operating condition, not a required operating point. Applications designed for 125mW operation can operate within the 100mW limit of the RN2904FE,LF if circuit design ensures power dissipation does not exceed 100mW during normal operation.

Q: Are all substitute parts available in the same package as DMA964030R?

A: All substitute parts are available in SOT-563 and SOT-666 packages, matching the original DMA964030R package options. Supplier device packages differ (SSMini6-F3-B, EMT6, SOT-563, ES6) but represent equivalent physical and electrical packaging. Verify specific supplier device package availability with component distributors for your procurement requirements.

Q: Can NSBA144EDXV6T5G be used in new production designs?

A: NSBA144EDXV6T5G is listed as obsolete and is not recommended for new production designs. This part is appropriate only for legacy system maintenance and repair when existing inventory is available. For new designs, select EMB2T2R or RN2904FE,LF, both of which are in active product status.

Q: What is the significance of the DC Current Gain (hFE) difference between DMA964030R (80) and EMB2T2R (68)?

A: The DC current gain specification represents the minimum amplification factor under specified test conditions. The DMA964030R specifies a minimum of 80 at 5mA collector current and 10V collector-emitter voltage. The EMB2T2R specifies a minimum of 68 at 5mA collector current and 5V collector-emitter voltage. Both values are within acceptable range for pre-biased transistor applications. The lower specification in EMB2T2R reflects different test conditions (5V versus 10V) rather than inferior performance. Circuit designs based on the original DMA964030R will function with EMB2T2R.

Q: Is RoHS compliance maintained across all substitute parts?

A: Yes. The original DMA964030R is RoHS Compliant. All substitute parts (EMB2FHAT2R, EMB2T2R, NSBA144EDXV6T5G, RN2904FE,LF) are ROHS3 Compliant, which represents an enhanced RoHS standard. ROHS3 compliance is backward compatible with RoHS requirements and is acceptable for applications requiring RoHS compliance.