DMA266030R Equivalent & Substitute Parts

Part Overview

The DMA266030R is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components in a Surface Mount Mini6-G4-B package. This component integrates two PNP transistors with internal biasing resistors, designed for applications requiring compact switching and amplification functionality at 50V maximum collector-emitter breakdown voltage and 100mA maximum collector current.

The DMA266030R is discontinued at DiGi Electronics. Equivalent substitute parts are available from alternative manufacturers with matching or compatible electrical and mechanical specifications, enabling continued system design and production support.

Substiute Parts

DMA266030R

Panasonic Electronic ComponentsIn Stock: 1028DMA266030R Datasheet

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IMB2AT110

Rohm SemiconductorIn Stock: 35434IMB2AT110 Datasheet

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UMB2NFHATN

Rohm SemiconductorIn Stock: 4548UMB2NFHATN Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMA266030R is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Transistor configuration: 2 PNP - Pre-Biased (Dual)
• Maximum collector current: 100mA
• Maximum collector-emitter breakdown voltage: 50V
• Internal base resistor (R1): 47kOhms
• Internal emitter-base resistor (R2): 47kOhms
• Maximum power dissipation: 300mW or greater
• Saturation voltage and cutoff current characteristics within acceptable operating margins

Mechanical Compatibility Requirements:

• Surface Mount package format
• Pin configuration compatible with SOT-23-6 or equivalent 6-pin surface mount packages
• Moisture sensitivity level: MSL 1 or better

Compliance Requirements:

• RoHS compliance (RoHS Compliant or ROHS3 Compliant)

Substitute parts must satisfy all electrical parameters and maintain surface mount compatibility. Parts with higher power ratings, improved frequency response, or automotive qualification may be selected based on application requirements, provided all core electrical specifications are met or exceeded.

Parameter Comparison

Engineering Selection Recommendations

IMB2AT110 (Rohm Semiconductor)

The IMB2AT110 is a direct functional equivalent to the DMA266030R. Both parts share identical maximum collector current (100mA), collector-emitter breakdown voltage (50V), internal resistor values (47kOhms each), and maximum power dissipation (300mW). The IMB2AT110 is currently in active production status with high inventory availability (35,400 units). This part meets ROHS3 compliance and maintains MSL 1 rating. The IMB2AT110 offers enhanced frequency response (250MHz transition frequency) compared to the DMA266030R specification. Package compatibility requires verification: the IMB2AT110 uses SC-74 or SOT-457 packaging, which differs from the DMA266030R SOT-23-6 package. Pin-to-pin layout confirmation is necessary before direct substitution.

UMB2NFHATN (Rohm Semiconductor)

The UMB2NFHATN is a functionally compatible substitute with matching transistor configuration, collector current rating (100mA), and internal resistor values (47kOhms each). This part is actively produced with moderate inventory availability (4,460 units) and carries automotive-grade qualification (AEC-Q101). The UMB2NFHATN provides 250MHz transition frequency performance. Critical differences include reduced maximum power dissipation (150mW versus 300mW for the DMA266030R) and unspecified collector-emitter breakdown voltage. The UMB2NFHATN is suitable for applications where power dissipation does not exceed 150mW. Package format uses 6-TSSOP, SC-88, or SOT-363, requiring pin configuration verification against the original SOT-23-6 layout.

Selection Criteria:

For applications requiring maximum power dissipation of 300mW and standard industrial compliance, the IMB2AT110 is the preferred substitute. For automotive applications or systems with power dissipation limited to 150mW or less, the UMB2NFHATN provides AEC-Q101 qualification. Both substitutes require physical package compatibility verification and PCB layout assessment before implementation.

Frequently Asked Questions (FAQ)

Q: Can the IMB2AT110 directly replace the DMA266030R without PCB modifications?

A: The IMB2AT110 and DMA266030R share identical electrical specifications for collector current, breakdown voltage, and internal resistor values. However, package compatibility must be confirmed. The DMA266030R uses SOT-23-6 packaging while the IMB2AT110 uses SC-74 or SOT-457 packaging. Pin-to-pin layout comparison is required to determine if direct substitution is possible or if PCB footprint modification is necessary.

Q: What is the primary difference between the IMB2AT110 and UMB2NFHATN substitutes?

A: Both parts provide equivalent transistor functionality and internal resistor configuration. The IMB2AT110 supports 300mW maximum power dissipation, matching the original DMA266030R specification. The UMB2NFHATN is rated for 150mW maximum power dissipation and includes automotive-grade qualification (AEC-Q101). Selection depends on application power requirements and automotive compliance needs.

Q: Are all substitute parts RoHS compliant?

A: Yes. The DMA266030R is RoHS Compliant. Both substitute parts (IMB2AT110 and UMB2NFHATN) are ROHS3 Compliant, meeting current RoHS requirements. All parts maintain MSL 1 (Unlimited) moisture sensitivity rating.

Q: What does the 47kOhms resistor specification mean in a pre-biased transistor?

A: Pre-biased transistors integrate internal resistors between the base and emitter (R2) and between the base and collector (R1). In the DMA266030R, IMB2AT110, and UMB2NFHATN, both R1 and R2 are 47kOhms. These internal resistors establish the transistor's biasing network, enabling direct switching operation without external biasing components. Matching resistor values ensure equivalent switching characteristics across substitute parts.

Q: Why is the DMA266030R discontinued if suitable substitutes are available?

A: Component discontinuation occurs due to manufacturer production decisions, market demand shifts, or product line consolidation. The availability of functionally equivalent substitutes from Rohm Semiconductor (IMB2AT110 and UMB2NFHATN) ensures continued design support and production capability for systems using the DMA266030R.

Q: Does the 250MHz transition frequency of substitute parts affect compatibility?

A: The DMA266030R does not specify transition frequency. The IMB2AT110 and UMB2NFHATN both provide 250MHz transition frequency, representing enhanced high-frequency performance. For applications operating below this frequency threshold, the higher specification does not negatively impact compatibility. Applications requiring specific frequency response characteristics should verify performance against system requirements.

Q: What inventory status should influence substitution decisions?

A: The IMB2AT110 has high inventory availability (35,400 units), supporting immediate procurement for new designs or production ramp. The UMB2NFHATN has moderate availability (4,460 units). The DMA266030R is discontinued at DiGi Electronics. For long-term production planning, the IMB2AT110 offers superior supply chain stability due to active production status and higher stock levels.