DLM10E Equivalent & Substitute Parts

Part Overview

The DLM10E is a general-purpose rectifier diode manufactured by onsemi, rated for 400 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) axial through-hole package. This part is classified as obsolete, making equivalent substitutes necessary for new designs and ongoing production requirements. The DLM10E features fast recovery characteristics with a reverse recovery time of 35 ns, suitable for applications requiring rapid switching performance in rectification circuits.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	400 V
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	980 mV @ 1 A
Speed Classification	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr)	35 ns
Current - Reverse Leakage @ Vr	10 µA @ 200 V
Mounting Type	Through Hole
Package / Case	DO-204AL, DO-41, Axial
Operating Temperature - Junction (Max)	150°C
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the DLM10E is determined by strict electrical and mechanical compatibility across the following parameters:

Primary Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1 A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial

Secondary Compatibility Factors:

Speed classification (Fast Recovery or Standard Recovery)
Reverse Recovery Time (trr)
Forward Voltage (Vf) characteristics
Operating Temperature range
Product Status (Active preferred over obsolete)

All substitute parts listed maintain the core electrical ratings of 400 V and 1 A. Differences in recovery speed, forward voltage drop, and reverse leakage current reflect variations in semiconductor technology and manufacturing processes. Parts are grouped by recovery speed classification, as this parameter significantly affects circuit performance in switching applications.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	Speed	trr (ns)	Ir @ Vr	Product Status	Package
DLM10E	onsemi	400 V	1 A	980 mV @ 1 A	Fast Recovery ≤ 500 ns	35 ns	10 µA @ 200 V	Obsolete	DO-204AL
1N4004G	Rectron USA	400 V	1 A	1 V @ 1 A	Standard Recovery > 500 ns	—	200 nA @ 400 V	Active	DO-41
1N4936G	Taiwan Semiconductor Corporation	400 V	1 A	1.2 V @ 1 A	Fast Recovery ≤ 500 ns	200 ns	5 µA @ 400 V	Active	DO-204AL
EGP10G	Fairchild Semiconductor	400 V	1 A	1.25 V @ 1 A	Fast Recovery ≤ 500 ns	50 ns	5 µA @ 400 V	Active	DO-204AL
RGP10G	Fairchild Semiconductor	400 V	1 A	1.3 V @ 1 A	Fast Recovery ≤ 500 ns	150 ns	5 µA @ 400 V	Active	DO-41
UF4004	Diotec Semiconductor	400 V	1 A	1.25 V @ 1 A	Fast Recovery ≤ 500 ns	50 ns	5 µA @ 400 V	Active	DO-41
1N4004-AP	Micro Commercial Co	400 V	1 A	1 V @ 1 A	Standard Recovery > 500 ns	2 µs	5 µA @ 400 V	Active	DO-41
1N4004-BP	Micro Commercial Co	400 V	1 A	1 V @ 1 A	Standard Recovery > 500 ns	2 µs	5 µA @ 400 V	Active	DO-41
1N4246GP-E3/73	Vishay General Semiconductor - Diodes Division	400 V	1 A	1.2 V @ 1 A	Standard Recovery > 500 ns	—	1 µA @ 400 V	Active	DO-204AL
1N4936-E3/53	Vishay General Semiconductor - Diodes Division	400 V	1 A	1.2 V @ 1 A	Fast Recovery ≤ 500 ns	200 ns	5 µA @ 400 V	Active	DO-204AL
1N4936-E3/54	Vishay General Semiconductor - Diodes Division	400 V	1 A	1.2 V @ 1 A	Fast Recovery ≤ 500 ns	200 ns	5 µA @ 400 V	Active	DO-204AL

Engineering Selection Recommendations

Fast Recovery Substitutes (Closest Performance Match):

The DLM10E exhibits fast recovery characteristics with a 35 ns reverse recovery time. Direct electrical equivalents include 1N4936G, 1N4936-E3/53, 1N4936-E3/54, EGP10G, RGP10G, and UF4004. These parts maintain the 400 V / 1 A rating and fast recovery speed classification. Among these, 1N4936-E3/54 (Vishay) and EGP10G (Fairchild) are recommended for new designs due to active product status and established supply availability. The 1N4936-E3/54 is available in Cut Tape packaging with 12,700 units in stock and carries ROHS3 compliance.

Standard Recovery Alternatives:

For applications where switching speed is not critical, standard recovery diodes such as 1N4004G, 1N4004-AP, 1N4004-BP, and 1N4246GP-E3/73 provide functional substitution. These parts exhibit longer reverse recovery times (2 µs or unspecified) but maintain identical voltage and current ratings. The 1N4004G (Rectron USA) carries AEC-Q101 automotive qualification and ROHS3 compliance. The 1N4246GP-E3/73 (Vishay SUPERECTIFIER® series) offers superior reverse leakage characteristics at 1 µA @ 400 V.

Compliance and Availability:

All recommended substitutes carry ROHS3 compliance and REACH compliance status. Product status is active for all listed alternatives, eliminating obsolescence risk. Packaging options include both DO-204AL (preferred for direct mechanical replacement) and DO-41 axial formats. Inventory levels range from 734 to 25,755 units, ensuring supply continuity.

Frequently Asked Questions (FAQ)

Q: Can I directly replace DLM10E with any 400 V / 1 A diode?

A: No. While voltage and current ratings are primary matching criteria, recovery speed classification significantly affects circuit performance. Fast recovery diodes (≤ 500 ns) are electrically compatible with the DLM10E. Standard recovery diodes (> 500 ns) function in rectification applications but exhibit different switching characteristics. Forward voltage drop variations (980 mV to 1.3 V) may affect circuit efficiency and thermal performance.

Q: What is the difference between DO-204AL and DO-41 packaging?

A: DO-204AL and DO-41 are equivalent axial through-hole package designations for the same physical form factor. Both refer to a two-lead axial component with identical lead spacing and mounting characteristics. Substitution between these designations is mechanically and electrically valid.

Q: Why does the DLM10E have lower forward voltage (980 mV) compared to substitutes (1.0 to 1.3 V)?

A: Forward voltage variation reflects differences in semiconductor material quality, doping profiles, and manufacturing processes. The DLM10E's lower forward voltage indicates superior conduction efficiency at rated current. Substitute parts with higher forward voltage (1.0 to 1.3 V) generate proportionally more heat during operation. For thermal-sensitive applications, verify that circuit design accommodates the higher power dissipation of substitute parts.

Q: Is the 35 ns reverse recovery time of DLM10E critical for substitution?

A: Reverse recovery time affects switching speed and electromagnetic interference (EMI) characteristics. The DLM10E's 35 ns recovery is faster than most substitutes (50 to 200 ns). In high-frequency switching applications, slower recovery times may cause increased switching losses and EMI. For standard 50/60 Hz rectification, recovery time differences are not functionally significant. Verify application frequency requirements before selecting a substitute.

Q: Which substitute offers the best reverse leakage performance?

A: The 1N4246GP-E3/73 (Vishay SUPERECTIFIER® series) exhibits the lowest reverse leakage at 1 µA @ 400 V, compared to the DLM10E at 10 µA @ 200 V. Lower reverse leakage reduces standby current and improves circuit efficiency in low-power applications. This part is recommended for precision rectification circuits where leakage current is a design constraint.

Q: Are all substitutes RoHS3 compliant?

A: Most recommended substitutes carry ROHS3 compliance certification. The RGP10G (Fairchild) lists Moisture Sensitivity Level as "Vendor Undefined" without explicit RoHS status. For applications requiring documented RoHS3 compliance, select from 1N4004G, 1N4936G, EGP10G, UF4004, 1N4004-AP, 1N4004-BP, 1N4246GP-E3/73, 1N4936-E3/53, or 1N4936-E3/54.

Q: Can I use automotive-grade diodes (1N4004G with AEC-Q101) in non-automotive applications?

A: Yes. Automotive-grade components meet or exceed commercial-grade specifications. The 1N4004G carries AEC-Q101 qualification, indicating enhanced reliability testing and process control. Using automotive-grade parts in commercial applications provides additional margin for reliability without functional incompatibility.

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