DLE30E Equivalent & Substitute Parts

Part Overview

The DLE30E is a general-purpose rectifier diode manufactured by onsemi, rated for 400 V DC reverse voltage and 3 A average rectified current in an axial through-hole package (DO-201AD). This component is classified as obsolete, indicating it is no longer in active production. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this rectifier specification.

Substiute Parts

DLE30E
onsemiIn Stock: 881DLE30E Datasheet
DLE30E
Current Part
EGP30G
onsemiIn Stock: 6047EGP30G Datasheet
EGP30G
Similar
31GF4-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 368031GF4-E3/54 Datasheet
31GF4-E3/54
Direct
1N5404-G
Comchip TechnologyIn Stock: 2089711N5404-G Datasheet
1N5404-G
Similar
HER505GP-AP
Micro Commercial CoIn Stock: 957HER505GP-AP Datasheet
HER505GP-AP
Similar
HER505GP-TP
Micro Commercial CoIn Stock: 927HER505GP-TP Datasheet
HER505GP-TP
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) 1.25 V @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns
Current - Reverse Leakage @ Vr 20 µA @ 400 V
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Operating Temperature - Junction (Max) 150 °C

Substitute Part Grouping Explanation

Substitution of the DLE30E is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 400 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial compatible

Acceptable Variation Parameters:

  • Voltage - Forward (Vf): Variations within typical rectifier specifications
  • Reverse Recovery Time (trr): Fast recovery characteristics preferred but not mandatory
  • Current - Reverse Leakage: Lower values indicate improved performance
  • Operating Temperature Range: Must support minimum 150°C junction temperature

Substitute parts are grouped into two categories:

Direct Equivalents: Parts meeting all critical parameters with identical or superior electrical characteristics and active product status.

Functional Equivalents: Parts meeting all critical parameters with minor variations in secondary characteristics or alternative product status, suitable for applications where the primary electrical specifications are the determining factor.

Parameter Comparison

Parameter DLE30E (Main) EGP30G 31GF4-E3/54 1N5404-G HER505GP-AP HER505GP-TP
Manufacturer onsemi onsemi Vishay General Semiconductor - Diodes Division Comchip Technology Micro Commercial Co Micro Commercial Co
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V 400 V 400 V 400 V
Current - Average Rectified (Io) 3 A 3 A 3 A 3 A 5 A 5 A
Voltage - Forward (Vf) (Max) 1.25 V @ 1 A 1.25 V @ 3 A 1.25 V @ 3 A 950 mV @ 3 A 1.3 V @ 5 A 1.3 V @ 5 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 50 ns 30 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 20 µA @ 400 V 5 µA @ 400 V 20 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Operating Temperature - Junction (Max) 150°C 150°C 150°C 125°C 150°C 150°C
Product Status Obsolete Not For New Designs Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitute: 31GF4-E3/54

The 31GF4-E3/54 manufactured by Vishay General Semiconductor - Diodes Division is the recommended primary substitute for the DLE30E. This part maintains identical electrical specifications including 400 V reverse voltage, 3 A average rectified current, 30 ns reverse recovery time, and 20 µA reverse leakage current. The component carries Active product status, ensuring ongoing availability and supply chain support. RoHS3 compliance and REACH Unaffected status provide regulatory alignment for current manufacturing standards. The operating temperature range of -40°C to 150°C supports the maximum junction temperature requirement of the original part.

Secondary Substitute: EGP30G

The EGP30G manufactured by onsemi provides functional equivalence with identical voltage and current ratings. Although classified as Not For New Designs, this part maintains the same manufacturer lineage as the original DLE30E and offers improved reverse leakage characteristics (5 µA versus 20 µA). This option is suitable for legacy system support and maintenance applications where supply continuity is prioritized.

Alternative Substitute: 1N5404-G

The 1N5404-G manufactured by Comchip Technology meets all critical electrical parameters with 400 V reverse voltage and 3 A average rectified current. This part carries Active product status and RoHS3 compliance. The forward voltage specification of 950 mV at 3 A is lower than the original part, indicating improved efficiency characteristics. The operating temperature maximum of 125°C is 25°C lower than the original specification and must be evaluated against application thermal requirements.

Higher Current Alternatives: HER505GP-AP and HER505GP-TP

The HER505GP-AP and HER505GP-TP manufactured by Micro Commercial Co provide 5 A average rectified current capability, exceeding the 3 A requirement of the DLE30E. Both parts maintain 400 V reverse voltage rating and fast recovery characteristics. These options are suitable for applications requiring current margin or where 5 A rated components are preferred for design standardization. Both parts carry Active product status and support the full operating temperature range of -65°C to 150°C.

Frequently Asked Questions (FAQ)

Q: Can the EGP30G be used as a direct replacement for the DLE30E in production?

A: The EGP30G meets all critical electrical specifications and maintains the same DO-201AD axial package. However, its Not For New Designs status indicates onsemi has discontinued active development. For new production designs, the 31GF4-E3/54 is preferred due to Active product status. For legacy system maintenance, EGP30G is functionally suitable.

Q: What is the significance of the 30 ns versus 50 ns reverse recovery time difference?

A: Reverse recovery time (trr) affects switching speed and electromagnetic interference characteristics. The DLE30E and 31GF4-E3/54 both specify 30 ns, while EGP30G, HER505GP-AP, and HER505GP-TP specify 50 ns. For applications sensitive to switching transients or operating at high frequencies, the 30 ns specification is preferred. For standard rectification applications, the 50 ns specification is functionally equivalent.

Q: Are the HER505GP-AP and HER505GP-TP suitable substitutes despite their 5 A rating?

A: Yes, both parts are suitable substitutes. The 5 A rating exceeds the 3 A requirement of the DLE30E, providing current margin and design flexibility. The identical 400 V reverse voltage, fast recovery characteristics, and DO-201AD package ensure mechanical and electrical compatibility. These parts are particularly suitable for applications where standardizing on higher-rated components simplifies inventory management.

Q: Why does the 1N5404-G have a lower maximum operating temperature than the DLE30E?

A: The 1N5404-G specifies a maximum junction temperature of 125°C compared to the DLE30E's 150°C. This 25°C difference must be evaluated against application thermal requirements. If the application operates near the 150°C limit, the 1N5404-G may not provide adequate thermal margin. For applications with lower thermal stress, this difference is not significant.

Q: What is the impact of the forward voltage difference between 1N5404-G (950 mV) and DLE30E (1.25 V)?

A: The 1N5404-G exhibits lower forward voltage drop at 3 A, resulting in reduced power dissipation and improved efficiency. This is a beneficial characteristic for most applications. The lower forward voltage does not affect circuit compatibility; it only improves thermal performance and reduces power consumption.

Q: Are all substitute parts RoHS3 compliant?

A: The 31GF4-E3/54 and 1N5404-G explicitly specify RoHS3 compliance. The EGP30G also specifies RoHS3 compliance. The HER505GP-AP and HER505GP-TP do not provide explicit RoHS status in the available specifications. For applications requiring RoHS3 certification, the 31GF4-E3/54 is the recommended choice.

Q: Can the DLE30E be replaced with a higher voltage rated diode such as a 600 V part?

A: Substitution with higher voltage rated parts is not recommended based on the provided specifications. The DLE30E is specified for 400 V applications. Using a higher voltage rated component introduces unnecessary cost and may alter circuit performance characteristics. Substitutes must maintain the 400 V reverse voltage specification.

Q: What packaging considerations apply when substituting the DLE30E?

A: All substitute parts specified maintain the DO-201AD axial through-hole package, ensuring direct mechanical compatibility with existing PCB layouts and assembly processes. No modifications to board design, assembly procedures, or test fixtures are required when substituting between these parts.

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