DL4936-13 Equivalent & Substitute Parts

Part Overview

The DL4936-13 is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 400 V DC reverse voltage and 1 A average rectified current in a surface mount MELF (DO-213AB) package. This component is classified as discontinued at DiGi Electronics, necessitating identification of active equivalent and substitute parts that maintain electrical and mechanical compatibility for new designs and production continuity.

Substiute Parts

DL4936-13
Diodes IncorporatedIn Stock: 5174DL4936-13 Datasheet
DL4936-13
Current Part
1N5616US
Microchip TechnologyIn Stock: 10341N5616US Datasheet
1N5616US
MFR Recommended
1N6481-E3/96
Vishay General Semiconductor - Diodes DivisionIn Stock: 458431N6481-E3/96 Datasheet
1N6481-E3/96
MFR Recommended
BYM10-400-E3/96
Vishay General Semiconductor - Diodes DivisionIn Stock: 3703BYM10-400-E3/96 Datasheet
BYM10-400-E3/96
MFR Recommended
BYM12-400-E3/96
Vishay General Semiconductor - Diodes DivisionIn Stock: 2179BYM12-400-E3/96 Datasheet
BYM12-400-E3/96
MFR Recommended
GL41G-E3/96
Vishay General Semiconductor - Diodes DivisionIn Stock: 2730GL41G-E3/96 Datasheet
GL41G-E3/96
MFR Recommended
GL41G-E3/97
Vishay General Semiconductor - Diodes DivisionIn Stock: 13913GL41G-E3/97 Datasheet
GL41G-E3/97
MFR Recommended
GL41GHE3/96
Vishay General Semiconductor - Diodes DivisionIn Stock: 5119GL41GHE3/96 Datasheet
GL41GHE3/96
MFR Recommended

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A
Speed Classification Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr) 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Capacitance @ Vr, F 15 pF @ 4 V, 1 MHz
Package / Case DO-213AB, MELF (Glass)
Operating Temperature - Junction -65°C ~ 150°C
Mounting Type Surface Mount
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitution of the DL4936-13 is determined by strict equivalence in the following electrical and mechanical parameters:

Primary Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-213AB, MELF (Glass)
  • Mounting Type: Surface Mount

Secondary Compatibility Factors:

  • Forward voltage (Vf) within acceptable circuit operating margins
  • Reverse recovery time (trr) and speed classification for switching performance
  • Reverse leakage current (Ir) for leakage-sensitive applications
  • Operating temperature range for thermal environment compatibility

All identified substitute parts maintain the 400 V / 1 A electrical rating and DO-213AB MELF package form factor. Variations in forward voltage, recovery time, and leakage current reflect different semiconductor technologies (Standard vs. Fast Recovery vs. Avalanche) and manufacturing processes, each suitable for specific application requirements within the defined voltage and current envelope.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed trr Ir @ Vr Package Temp Range Product Status RoHS
DL4936-13 Diodes Incorporated 400 V 1 A 1.2 V @ 1 A Fast Recovery ≤ 500 ns 200 ns 5 µA @ 400 V DO-213AB, MELF -65°C ~ 150°C Discontinued Non-compliant
1N5616US Microchip Technology 400 V 1 A 1.3 V @ 3 A Standard Recovery > 500 ns 2 µs 500 nA @ 400 V SQ-MELF, A -65°C ~ 200°C Active Non-compliant
1N6481-E3/96 Vishay General Semiconductor 400 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified 10 µA @ 400 V DO-213AB, MELF -65°C ~ 175°C Active ROHS3 Compliant
BYM10-400-E3/96 Vishay General Semiconductor 400 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified 10 µA @ 400 V DO-213AB, MELF -65°C ~ 175°C Active ROHS3 Compliant
BYM12-400-E3/96 Vishay General Semiconductor 400 V 1 A 1.25 V @ 1 A Fast Recovery ≤ 500 ns 50 ns 5 µA @ 400 V DO-213AB, MELF -65°C ~ 175°C Active ROHS3 Compliant
GL41G-E3/96 Vishay General Semiconductor 400 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified 10 µA @ 400 V DO-213AB, MELF -65°C ~ 175°C Active ROHS3 Compliant
GL41G-E3/97 Vishay General Semiconductor 400 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified 10 µA @ 400 V DO-213AB, MELF -65°C ~ 175°C Active ROHS3 Compliant
GL41GHE3/96 Vishay General Semiconductor 400 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified 10 µA @ 400 V DO-213AB, MELF -65°C ~ 175°C Active ROHS3 Compliant

Engineering Selection Recommendations

For RoHS3 Compliance Requirements: The following active parts satisfy RoHS3 compliance and maintain full electrical and mechanical compatibility with the DL4936-13:

  • 1N6481-E3/96 (Vishay SUPERECTIFIER®, Standard Recovery)
  • BYM10-400-E3/96 (Vishay SUPERECTIFIER®, Avalanche Technology)
  • BYM12-400-E3/96 (Vishay SUPERECTIFIER®, Fast Recovery)
  • GL41G-E3/96 (Vishay SUPERECTIFIER®, Standard Recovery)
  • GL41G-E3/97 (Vishay SUPERECTIFIER®, Standard Recovery)
  • GL41GHE3/96 (Vishay SUPERECTIFIER®, Standard Recovery)

For Non-Compliant Legacy Designs: The 1N5616US (Microchip Technology) provides an active alternative with extended operating temperature range (-65°C ~ 200°C) and lower reverse leakage current (500 nA @ 400 V), though it uses a SQ-MELF package variant and Standard Recovery speed classification.

Technology-Specific Selection:

Fast Recovery Applications: BYM12-400-E3/96 offers the fastest recovery time (50 ns) with RoHS3 compliance, suitable for high-frequency switching circuits.

Standard Recovery Applications: 1N6481-E3/96, GL41G-E3/96, GL41G-E3/97, and GL41GHE3/96 provide equivalent performance with lower forward voltage (1.1 V @ 1 A) compared to the original DL4936-13 (1.2 V @ 1 A).

Avalanche Technology: BYM10-400-E3/96 incorporates avalanche technology for enhanced reverse voltage transient protection.

All recommended substitutes are active products with established supply availability and RoHS3 compliance status.

Frequently Asked Questions (FAQ)

Q: Can the DL4936-13 be directly replaced with any of the listed substitute parts?

A: Yes, all listed substitute parts maintain the critical electrical parameters (400 V reverse voltage, 1 A average rectified current) and the DO-213AB MELF surface mount package form factor. Direct replacement is mechanically and electrically feasible. However, circuit performance may vary based on differences in forward voltage, recovery time, and leakage current characteristics.

Q: What is the difference between Fast Recovery and Standard Recovery classifications?

A: Fast Recovery diodes (≤ 500 ns) exhibit shorter reverse recovery time, reducing switching losses in high-frequency applications. Standard Recovery diodes (> 500 ns) are suitable for lower-frequency rectification and general-purpose applications. The DL4936-13 is classified as Fast Recovery with 200 ns trr, while most Vishay substitutes are Standard Recovery. BYM12-400-E3/96 maintains Fast Recovery performance with 50 ns trr.

Q: Why do some substitute parts have different forward voltage specifications?

A: Forward voltage variations reflect differences in semiconductor doping profiles, junction design, and manufacturing processes. The DL4936-13 specifies 1.2 V @ 1 A, while most Vishay alternatives specify 1.1 V @ 1 A. These differences are within typical circuit design margins and do not prevent functional substitution. Verify forward voltage impact on specific circuit power dissipation and thermal requirements.

Q: Is the 1N5616US package compatible with the DL4936-13?

A: The 1N5616US uses a SQ-MELF, A package variant, which is mechanically similar to the DO-213AB MELF but may have minor dimensional differences. Verify PCB footprint compatibility before substitution. The part is otherwise electrically equivalent.

Q: What is the significance of RoHS3 compliance for substitute selection?

A: RoHS3 compliance indicates conformance to current environmental and hazardous substance restrictions. The original DL4936-13 is RoHS non-compliant. All Vishay substitute parts (1N6481-E3/96, BYM10-400-E3/96, BYM12-400-E3/96, GL41G-E3/96, GL41G-E3/97, GL41GHE3/96) are ROHS3 compliant, making them suitable for new designs subject to regulatory requirements.

Q: How does reverse leakage current affect circuit performance?

A: Reverse leakage current (Ir) determines the diode's blocking capability and affects circuit standby power consumption. The DL4936-13 specifies 5 µA @ 400 V, while most Vishay alternatives specify 10 µA @ 400 V. The 1N5616US specifies 500 nA @ 400 V, offering superior leakage performance. Select based on circuit sensitivity to leakage current in blocking mode.

Q: Can the DL4936-13 be used in applications requiring extended temperature operation?

A: The DL4936-13 operates from -65°C to 150°C. Substitute parts offer extended ranges: 1N5616US (-65°C to 200°C) and Vishay parts (-65°C to 175°C). For applications requiring operation above 150°C, select 1N5616US or Vishay alternatives.

Q: What is the difference between the GL41G variants (E3/96, E3/97, GHE3/96)?

A: All three GL41G variants maintain identical electrical specifications (400 V, 1 A, 1.1 V @ 1 A, Standard Recovery). Differences are in packaging configuration: GL41G-E3/96 and GL41GHE3/96 are supplied in Tape & Reel, while GL41G-E3/97 is also Tape & Reel. Selection depends on procurement and assembly requirements.

Q: Is the BYM10-400-E3/96 Avalanche technology suitable for general-purpose rectification?

A: Yes. Avalanche technology provides enhanced reverse voltage transient protection without compromising general-purpose rectification performance. The BYM10-400-E3/96 maintains standard electrical ratings and is suitable for applications requiring additional reverse voltage surge protection.

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