DL4935-13 Equivalent & Substitute Parts

Part Overview

The DL4935-13 is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount MELF (DO-213AB) package. This part is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

The DL4935-13 features fast recovery characteristics with a reverse recovery time of 200 ns, making it suitable for applications requiring rapid switching performance in rectification circuits. Equivalent and substitute parts must maintain compatibility across voltage rating, current capacity, package form factor, and thermal operating range.

Key Parameters

Parameter	DL4935-13 Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.2 V @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	200	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Capacitance @ Vr, F	15	pF @ 4V, 1MHz
Package / Case	DO-213AB, MELF (Glass)	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-65 to 150	°C
Technology	Standard	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitute parts for the DL4935-13 are grouped based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1 A
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount

Secondary Compatibility Parameters:

Voltage - Forward (Vf) (Max) @ If: Must not exceed application requirements
Operating Temperature - Junction: Must support -65°C minimum and application maximum
Current - Reverse Leakage @ Vr: Lower values indicate superior performance
Reverse Recovery Time (trr): Determines switching speed suitability

All substitute parts listed maintain the mandatory electrical ratings (200 V, 1 A) and identical package form factor (DO-213AB MELF). Substitutes are differentiated by recovery speed classification (Fast Recovery vs. Standard Recovery), forward voltage characteristics, and product status (Active vs. Discontinued).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed Classification	trr [ns]	Ir @ Vr [µA]	Package	Tj (°C)	Product Status	RoHS Status
DL4935-13	Diodes Incorporated	200	1	1.2 @ 1 A	Fast Recovery ≤ 500ns	200	5 @ 200 V	DO-213AB MELF	-65 to 150	Discontinued	Non-compliant
1N5614US	Microchip Technology	200	1	1.3 @ 3 A	Standard Recovery >500ns	2000	0.5 @ 200 V	SQ-MELF, A	-65 to 200	Active	Non-compliant
1N6480-E3/96	Vishay General Semiconductor	200	1	1.1 @ 1 A	Standard Recovery >500ns	—	10 @ 200 V	DO-213AB MELF	-65 to 175	Active	ROHS3 Compliant
BYM10-200-E3/96	Vishay General Semiconductor	200	1	1.1 @ 1 A	Standard Recovery >500ns	—	10 @ 200 V	DO-213AB MELF	-65 to 175	Active	ROHS3 Compliant
BYM10-200-E3/97	Vishay General Semiconductor	200	1	1.1 @ 1 A	Standard Recovery >500ns	—	10 @ 200 V	DO-213AB MELF	-65 to 175	Active	ROHS3 Compliant
BYM12-200-E3/96	Vishay General Semiconductor	200	1	1.0 @ 1 A	Fast Recovery ≤ 500ns	50	5 @ 200 V	DO-213AB MELF	-65 to 175	Active	ROHS3 Compliant
BYM12-200-E3/97	Vishay General Semiconductor	200	1	1.0 @ 1 A	Fast Recovery ≤ 500ns	50	5 @ 200 V	DO-213AB MELF	-65 to 175	Active	ROHS3 Compliant
EGL41D-E3/96	Vishay General Semiconductor	200	1	1.0 @ 1 A	Fast Recovery ≤ 500ns	50	5 @ 200 V	DO-213AB MELF	-65 to 175	Active	ROHS3 Compliant
EGL41D-E3/97	Vishay General Semiconductor	200	1	1.0 @ 1 A	Fast Recovery ≤ 500ns	50	5 @ 200 V	DO-213AB MELF	-65 to 175	Active	ROHS3 Compliant
GL41D-E3/96	Vishay General Semiconductor	200	1	1.1 @ 1 A	Standard Recovery >500ns	—	10 @ 200 V	DO-213AB MELF	-65 to 175	Active	ROHS3 Compliant

Engineering Selection Recommendations

Direct Electrical Equivalents (Fast Recovery, Matched Characteristics):

The BYM12-200-E3/96 and BYM12-200-E3/97 provide the closest electrical match to the DL4935-13. Both parts feature fast recovery characteristics (≤ 500 ns), identical reverse recovery time (50 ns), matching reverse leakage current (5 µA @ 200 V), and superior forward voltage (1.0 V @ 1 A vs. 1.2 V). Both are manufactured by Vishay General Semiconductor and carry ROHS3 compliance. The primary difference between these two variants is packaging designation (E3/96 vs. E3/97), with both maintaining active product status and DO-213AB MELF package compatibility.

The EGL41D-E3/96 and EGL41D-E3/97 offer identical electrical performance to the BYM12 series, with the same fast recovery speed, reverse recovery time, and reverse leakage specifications. These parts are also Vishay-manufactured, ROHS3 compliant, and actively produced.

Alternative Substitutes (Standard Recovery):

The 1N6480-E3/96, BYM10-200-E3/96, BYM10-200-E3/97, and GL41D-E3/96 are classified as standard recovery devices (>500 ns) and represent functional alternatives where switching speed requirements are less stringent. These parts maintain the 200 V / 1 A electrical ratings and DO-213AB MELF package form factor. All are manufactured by Vishay General Semiconductor and carry ROHS3 compliance with active product status.

Non-Preferred Alternative:

The 1N5614US (Microchip Technology) maintains 200 V / 1 A ratings but uses a different package designation (SQ-MELF, A) and exhibits significantly longer reverse recovery time (2000 ns). This part is not recommended for direct substitution in applications requiring fast recovery performance.

Compliance Consideration:

All active substitute parts listed carry ROHS3 compliance, whereas the original DL4935-13 is RoHS non-compliant. Selection of ROHS3-compliant alternatives aligns with current regulatory requirements for new designs and procurement.

Frequently Asked Questions (FAQ)

Q: Can the BYM12-200-E3/97 directly replace the DL4935-13 in existing designs?

A: Yes. The BYM12-200-E3/97 maintains identical electrical ratings (200 V, 1 A), package form factor (DO-213AB MELF), and mounting type (surface mount). The part exhibits superior performance characteristics: lower forward voltage (1.0 V vs. 1.2 V @ 1 A), faster reverse recovery (50 ns vs. 200 ns), and matching reverse leakage current (5 µA @ 200 V). The operating temperature range (-65°C to 175°C) covers the DL4935-13 range (-65°C to 150°C).

Q: What is the difference between fast recovery and standard recovery classifications?

A: Fast recovery diodes (≤ 500 ns reverse recovery time) switch off more rapidly than standard recovery devices (>500 ns). The DL4935-13 is classified as fast recovery with 200 ns trr. Substitutes such as BYM12-200-E3/97 and EGL41D-E3/97 maintain this fast recovery characteristic. Standard recovery alternatives (1N6480-E3/96, BYM10-200-E3/96) are suitable only for applications where switching speed is not critical.

Q: Are the E3/96 and E3/97 package variants interchangeable?

A: Yes. The E3/96 and E3/97 designations refer to different manufacturing date codes or tape reel configurations from Vishay General Semiconductor. Both variants maintain identical electrical specifications and DO-213AB MELF package dimensions. Selection between them is determined by procurement availability and inventory requirements.

Q: Why do some substitutes show higher reverse leakage current?

A: Reverse leakage current (Ir) varies by device design and manufacturing process. The DL4935-13 and BYM12/EGL41 series specify 5 µA @ 200 V, while 1N6480-E3/96, BYM10 series, and GL41D-E3/96 specify 10 µA @ 200 V. Both values are within acceptable limits for general-purpose rectification. Lower leakage current indicates superior reverse blocking performance but does not preclude functional equivalence.

Q: Is RoHS compliance a substitution requirement?

A: RoHS compliance is not a functional substitution requirement but a regulatory and procurement consideration. The original DL4935-13 is RoHS non-compliant. All active substitute parts listed (BYM12-200-E3/96, BYM12-200-E3/97, EGL41D-E3/96, EGL41D-E3/97, 1N6480-E3/96, BYM10-200-E3/96, BYM10-200-E3/97, GL41D-E3/96) carry ROHS3 compliance. New designs should specify ROHS3-compliant alternatives.

Q: Can the 1N5614US be used as a substitute?

A: The 1N5614US maintains the required 200 V / 1 A electrical ratings but uses a different package designation (SQ-MELF, A vs. DO-213AB MELF) and exhibits significantly longer reverse recovery time (2000 ns vs. 200 ns). This part is not recommended for direct substitution in applications requiring fast switching performance or where the DO-213AB MELF package is specified.

Q: What is the maximum junction temperature difference between the DL4935-13 and its substitutes?

A: The DL4935-13 operates to 150°C junction temperature. All active Vishay substitutes (BYM12, EGL41, BYM10, GL41 series) operate to 175°C, providing a 25°C margin. The 1N5614US extends to 200°C. This temperature headroom ensures thermal compatibility across all listed alternatives.

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