DL4006-TP Equivalent & Substitute Parts

Part Overview

The DL4006-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 800 V DC reverse voltage and 1 A average rectified current in a surface mount MELF package. This component is classified as obsolete, which necessitates identification of equivalent and substitute parts for ongoing design requirements and production continuity. Active alternatives with matching or superior electrical characteristics are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	800	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A	V
Speed	Standard Recovery >500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	5	µA @ 800 V
Mounting Type	Surface Mount	—
Package / Case	DO-213AB, MELF	—
Operating Temperature - Junction	-65°C ~ 150°C	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the DL4006-TP is determined by the following critical parameters:

Voltage Rating: The main part operates at 800 V DC reverse voltage. Substitute parts must meet or exceed this voltage specification to ensure safe operation in the intended circuit.

Current Rating: The 1 A average rectified current requirement must be matched or exceeded by substitute components.

Package Type: The DO-213AB MELF surface mount package is the primary form factor. Substitutes in identical or compatible surface mount packages are preferred for PCB layout compatibility.

Recovery Speed: The standard recovery characteristic (>500ns, >200mA) defines the switching behavior. Substitutes with matching or faster recovery speeds are acceptable.

Temperature Range: The operating junction temperature range of -65°C to 150°C establishes the thermal operating envelope.

Compliance: RoHS3 compliance status is a critical selection criterion for regulated applications.

Substitute parts are grouped into two categories:

Category 1 - Direct Equivalents (800 V, 1 A, DO-213AB MELF): Parts with identical voltage and current ratings in the same package form. These provide pin-for-pin and functional compatibility.

Category 2 - Functional Alternatives (800 V, 1 A, Alternative Packages): Parts with matching electrical specifications but different surface mount packages, suitable for designs where package footprint flexibility exists.

Category 3 - Higher Voltage Alternatives (1000 V, 1 A, DO-213AB MELF): Parts with elevated voltage ratings that provide enhanced margin in high-voltage applications while maintaining current and package compatibility.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [V]	Package	Speed	Temp Range [°C]	RoHS Status	Product Status
DL4006-TP	Micro Commercial Co	800	1	1.1 @ 1A	DO-213AB MELF	Standard >500ns	-65 ~ 150	ROHS3 Compliant	Obsolete
1N6483-E3/96	Vishay General Semiconductor	800	1	1.1 @ 1A	DO-213AB MELF	Standard >500ns	-65 ~ 175	ROHS3 Compliant	Active
1N6483HE3/96	Vishay General Semiconductor	800	1	1.1 @ 1A	DO-213AB MELF	Standard >500ns	-65 ~ 175	ROHS3 Compliant	Active
1N6483HE3/97	Vishay General Semiconductor	800	1	1.1 @ 1A	DO-213AB MELF	Standard >500ns	-65 ~ 175	ROHS3 Compliant	Active
GL41M-E3/96	Vishay General Semiconductor	1000	1	1.2 @ 1A	DO-213AB MELF	Standard >500ns	-65 ~ 175	ROHS3 Compliant	Active
GL41M-E3/97	Vishay General Semiconductor	1000	1	1.2 @ 1A	DO-213AB MELF	Standard >500ns	-65 ~ 175	ROHS3 Compliant	Active
GL41MHE3/97	Vishay General Semiconductor	1000	1	1.2 @ 1A	DO-213AB MELF	Standard >500ns	-65 ~ 175	ROHS3 Compliant	Active
GS1J-LTP	Micro Commercial Co	600	1	1.0 @ 1A	DO-214AC SMA	Standard >500ns	-55 ~ 150	ROHS3 Compliant	Active
1N5620US	Microchip Technology	800	1	1.3 @ 3A	SQ-MELF D-5A	Standard >500ns	-65 ~ 200	RoHS non-compliant	Active
1N5621US	Microchip Technology	800	1	1.6 @ 3A	SQ-MELF D-5A	Fast ≤500ns	-65 ~ 175	RoHS non-compliant	Active
1N5623US	Microchip Technology	1000	1	1.6 @ 3A	SQ-MELF D-5A	Fast ≤500ns	-65 ~ 175	RoHS non-compliant	Active

Engineering Selection Recommendations

Primary Recommendation - Direct Equivalent (800 V, 1 A, DO-213AB MELF)

The 1N6483-E3/96, 1N6483HE3/96, and 1N6483HE3/97 from Vishay General Semiconductor are direct functional equivalents to the DL4006-TP. These parts maintain identical voltage and current ratings, matching forward voltage characteristics, and the same DO-213AB MELF package form factor. All three variants are ROHS3 compliant and carry active product status, ensuring long-term availability and supply chain stability. The extended operating temperature range (-65°C to 175°C versus -65°C to 150°C) provides additional thermal margin. These parts are suitable for direct substitution in existing designs without PCB layout modifications.

Secondary Recommendation - Higher Voltage Alternative (1000 V, 1 A, DO-213AB MELF)

The GL41M-E3/96, GL41M-E3/97, and GL41MHE3/97 from Vishay General Semiconductor provide elevated voltage ratings (1000 V) while maintaining 1 A current capacity and DO-213AB MELF packaging. These parts are ROHS3 compliant with active product status. The higher voltage rating introduces additional safety margin in applications subject to transient overvoltage conditions. Forward voltage is slightly elevated (1.2 V @ 1 A) compared to the main part (1.1 V @ 1 A), resulting in marginally increased power dissipation. These parts are suitable for direct substitution where voltage margin enhancement is beneficial.

Alternative Consideration - Lower Voltage, Different Package (600 V, 1 A, DO-214AC SMA)

The GS1J-LTP from Micro Commercial Co operates at 600 V, which is below the 800 V specification of the main part. This part is suitable only for applications where the circuit voltage requirement does not exceed 600 V. The DO-214AC SMA package differs from the DO-213AB MELF form factor, requiring PCB layout modification. This part is ROHS3 compliant with active product status.

Not Recommended - RoHS Non-Compliant Alternatives

The 1N5620US, 1N5621US, and 1N5623US from Microchip Technology are RoHS non-compliant. These parts are not suitable for applications subject to RoHS3 regulatory requirements. Selection of these parts is restricted to legacy systems or applications where RoHS compliance is not mandated.

Frequently Asked Questions (FAQ)

Q: Can the 1N6483-E3/96 be used as a direct replacement for the DL4006-TP?

A: Yes. The 1N6483-E3/96 is a direct functional equivalent. Both parts share identical voltage (800 V), current (1 A), forward voltage (1.1 V @ 1 A), and package specifications (DO-213AB MELF). The 1N6483-E3/96 is ROHS3 compliant with active product status, providing superior supply chain continuity compared to the obsolete DL4006-TP.

Q: What is the difference between the 1N6483-E3/96, 1N6483HE3/96, and 1N6483HE3/97 variants?

A: All three parts share identical electrical specifications (800 V, 1 A, 1.1 V forward voltage, standard recovery speed). The designations reflect different manufacturing date codes and packaging configurations. Selection among these variants is based on inventory availability and procurement lead time requirements.

Q: Can the GL41M-E3/96 be used in place of the DL4006-TP?

A: Yes, with the understanding that the GL41M-E3/96 operates at 1000 V, exceeding the 800 V specification of the DL4006-TP. This higher voltage rating provides additional safety margin in high-voltage applications. The forward voltage is slightly higher (1.2 V @ 1 A versus 1.1 V @ 1 A), resulting in marginally increased power dissipation. Both parts use the DO-213AB MELF package, enabling direct PCB substitution.

Q: Why is the GS1J-LTP not recommended as a substitute?

A: The GS1J-LTP operates at 600 V, which is below the 800 V rating of the DL4006-TP. This part is suitable only for applications where the maximum circuit voltage does not exceed 600 V. Additionally, the GS1J-LTP uses the DO-214AC SMA package, which differs from the DO-213AB MELF form factor, requiring PCB layout modification.

Q: Are the Microchip Technology parts (1N5620US, 1N5621US, 1N5623US) suitable substitutes?

A: These parts are not recommended for new designs or applications subject to RoHS3 compliance requirements. All three Microchip parts are RoHS non-compliant. The 1N5620US and 1N5621US operate at 800 V and 1 A, matching the electrical specifications of the DL4006-TP, but the RoHS non-compliance status restricts their use to legacy systems where regulatory exemptions apply.

Q: What is the significance of the DO-213AB MELF package?

A: The DO-213AB MELF package is a surface mount form factor with specific footprint dimensions. Substitute parts using the identical DO-213AB MELF package (such as the 1N6483-E3/96 and GL41M-E3/96) can be directly substituted on existing PCBs without layout modification. Parts using alternative packages (such as the GS1J-LTP in DO-214AC SMA) require PCB redesign.

Q: How does forward voltage affect component selection?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. The DL4006-TP specifies 1.1 V @ 1 A. Substitute parts with identical or lower forward voltage (such as the 1N6483-E3/96 at 1.1 V @ 1 A) provide equivalent performance. Parts with higher forward voltage (such as the GL41M-E3/96 at 1.2 V @ 1 A) result in increased power dissipation and heat generation, which may require thermal design review in power-sensitive applications.

Q: What does "Standard Recovery >500ns" mean?

A: Recovery speed describes the time required for the diode to transition from forward conduction to reverse blocking state. Standard recovery (>500ns) indicates a slower transition compared to fast recovery diodes (≤500ns). The DL4006-TP and its direct equivalents use standard recovery characteristics. Fast recovery alternatives (such as the 1N5621US) are suitable for applications requiring faster switching, but are not necessary for general-purpose rectification.

Q: Is the extended temperature range of the 1N6483-E3/96 (-65°C to 175°C) significant?

A: The DL4006-TP operates from -65°C to 150°C, while the 1N6483-E3/96 extends to 175°C. This additional 25°C margin provides enhanced thermal headroom in applications operating near the upper temperature limit. For most general-purpose applications, this difference is not critical, but it provides additional design margin in thermally constrained environments.

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