DIMD10A-7 Equivalent & Substitute Parts

Part Overview

The DIMD10A-7 is a pre-biased dual bipolar transistor (BJT) manufactured by Diodes Incorporated, combining one NPN and one PNP transistor in a single SC-74R surface mount package. This component is rated for 50V collector-emitter breakdown voltage, 100mA/500mA maximum collector current, and 300mW maximum power dissipation. The device is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current specifications, and thermal characteristics while accommodating available packaging options.

Substiute Parts

DIMD10A-7

Diodes IncorporatedIn Stock: 3300DIMD10A-7 Datasheet

Current PartRFQ

BCR10PNH6327XTSA1

Infineon TechnologiesIn Stock: 9118BCR10PNH6327XTSA1 Datasheet

MFR RecommendedRFQ

BCR35PNH6327XTSA1

Infineon TechnologiesIn Stock: 9590BCR35PNH6327XTSA1 Datasheet

MFR RecommendedRFQ

MUN5311DW1T1G

onsemiIn Stock: 466673MUN5311DW1T1G Datasheet

MFR RecommendedRFQ

MUN5314DW1T1G

onsemiIn Stock: 200189MUN5314DW1T1G Datasheet

MFR RecommendedRFQ

MUN5315DW1T1G

onsemiIn Stock: 100432MUN5315DW1T1G Datasheet

MFR RecommendedRFQ

PUMD10,115

Nexperia USA Inc.In Stock: 21489PUMD10,115 Datasheet

MFR RecommendedRFQ

PUMD10,125

Nexperia USA Inc.In Stock: 1138PUMD10,125 Datasheet

MFR RecommendedRFQ

PUMD10,135

Nexperia USA Inc.In Stock: 1029PUMD10,135 Datasheet

MFR RecommendedRFQ

RN4611(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 1041RN4611(TE85L,F) Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DIMD10A-7 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

• Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
• Voltage rating: 50V collector-emitter breakdown minimum
• Current rating: 100mA minimum collector current
• Power dissipation: 250mW or 300mW maximum
• Base and emitter-base resistor values: 10kOhms base resistor required for direct substitution
• Surface mount packaging: SC-74, SC-88, SOT-363, or 6-TSSOP acceptable
• Compliance: ROHS3 compliant, MSL 1 rating

Secondary Compatibility Considerations:

• Transition frequency: 130MHz minimum acceptable
• Vce saturation: 300mV or lower at specified test conditions
• Collector cutoff current: 500nA or lower
• Product status: Active or Last Time Buy acceptable; obsolete status requires replacement

Substitute parts are grouped into two categories based on base resistor configuration: standard 10kOhms base resistor variants (BCR10PNH6327XTSA1, MUN5311DW1T1G) and alternative base resistor configurations (BCR35PNH6327XTSA1, MUN5314DW1T1G, MUN5315DW1T1G, PUMD10 series, RN4611). The PUMD10 series and RN4611 feature modified base resistor values (2.2kOhms or 10kOhms) and are suitable for applications requiring different biasing characteristics while maintaining core electrical specifications.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

MUN5314DW1T1G and MUN5315DW1T1G from onsemi are recommended as primary substitutes. Both devices maintain the 50V voltage rating, 100mA collector current specification, and 250mW power dissipation. MUN5314DW1T1G features 47kOhms emitter-base resistor with 80 hFE minimum gain, while MUN5315DW1T1G provides 160 hFE minimum gain. Both are active products with extensive inventory availability (200,100 and 100,400 units respectively) and ROHS3 compliance. The SC-88/SOT-363 package is mechanically compatible with PCB layouts designed for SC-74 footprints through appropriate land pattern adaptation.

Secondary Substitutes (Functional Equivalence with Parameter Variations):

BCR10PNH6327XTSA1 and BCR35PNH6327XTSA1 from Infineon Technologies provide functional equivalence with reduced power dissipation (250mW) and lower transition frequency (130MHz and 150MHz respectively). These devices are classified as Last Time Buy, indicating limited future availability. BCR10PNH6327XTSA1 maintains 10kOhms base and emitter-base resistors, while BCR35PNH6327XTSA1 features 47kOhms emitter-base resistor. Both are ROHS3 compliant with MSL 1 rating.

Alternative Substitutes (Modified Biasing Characteristics):

PUMD10,115, PUMD10,125, and PUMD10,135 from Nexperia USA Inc. feature modified base resistor value (2.2kOhms) and emitter-base resistor (47kOhms), resulting in different biasing behavior. PUMD10,115 provides 230MHz transition frequency and 300mW power dissipation. PUMD10,125 is rated for 200mW maximum power. PUMD10,135 matches the 300mW specification. These devices are active products with ROHS3 compliance and suitable for applications requiring lower base impedance.

RN4611(TE85L,F) from Toshiba Semiconductor maintains the SC-74 package format identical to DIMD10A-7, with 10kOhms base resistor, 200MHz transition frequency, and 300mW power dissipation. This device is active with RoHS compliance and represents a direct package-compatible alternative.

Selection Criteria:

For designs requiring package compatibility with existing SC-74 footprints, select RN4611(TE85L,F). For new designs accepting SOT-363 or 6-TSSOP packages, select MUN5314DW1T1G or MUN5315DW1T1G based on required DC current gain specifications. Verify application-specific biasing requirements before selecting PUMD10 variants with modified base resistor values. Avoid BCR10PNH6327XTSA1 and BCR35PNH6327XTSA1 for new designs due to Last Time Buy status.

Frequently Asked Questions (FAQ)

Q: Can MUN5311DW1T1G, MUN5314DW1T1G, and MUN5315DW1T1G be used interchangeably with DIMD10A-7?

A: These three onsemi devices are functionally compatible with DIMD10A-7 within the specified electrical parameters. All three maintain 50V voltage rating, 100mA collector current, and 250mW power dissipation. Selection between them depends on DC current gain requirements: MUN5311DW1T1G provides 35 hFE minimum, MUN5314DW1T1G provides 80 hFE minimum, and MUN5315DW1T1G provides 160 hFE minimum. The primary difference is emitter-base resistor configuration: MUN5311DW1T1G and MUN5314DW1T1G feature 10kOhms and 47kOhms respectively, while MUN5315DW1T1G does not specify this parameter. Package compatibility requires PCB land pattern verification, as these devices use SC-88/SOT-363 format versus the original SC-74 format.

Q: What is the impact of package change from SC-74 to SOT-363?

A: The SC-74 (SOT-457) and SOT-363 packages differ in physical dimensions and pin configuration. SOT-363 is a 6-pin package with smaller footprint compared to SC-74. PCB redesign is required to accommodate the different land pattern. However, electrical functionality remains equivalent when pin assignments are correctly mapped. Verify pinout documentation for each substitute part to ensure correct signal routing.

Q: Why do PUMD10 variants have different base resistor values?

A: PUMD10,115, PUMD10,125, and PUMD10,135 feature 2.2kOhms base resistor instead of the 10kOhms specified in DIMD10A-7. This lower base impedance results in different biasing characteristics and faster switching response. These variants are suitable for applications requiring enhanced switching speed or different bias point requirements. Verify circuit design compatibility before substitution, as the modified base resistor value affects overall circuit behavior.

Q: Is RN4611(TE85L,F) a direct replacement for DIMD10A-7?

A: RN4611(TE85L,F) maintains identical SC-74 package format and 10kOhms base resistor configuration, making it the most direct package-compatible substitute. Electrical specifications are equivalent: 50V voltage rating, 100mA collector current, 300mW power dissipation, and 200MHz transition frequency. No PCB redesign is required for package compatibility. This device is active with RoHS compliance and represents the preferred choice for designs requiring minimal modification.

Q: What are the compliance and availability considerations for substitute selection?

A: All substitute parts listed are ROHS3 compliant or RoHS compliant with MSL 1 rating, meeting environmental and moisture sensitivity requirements equivalent to DIMD10A-7. Product status varies: MUN5311DW1T1G, MUN5314DW1T1G, MUN5315DW1T1G, PUMD10 variants, and RN4611(TE85L,F) are active products with substantial inventory availability. BCR10PNH6327XTSA1 and BCR35PNH6327XTSA1 are classified as Last Time Buy, indicating limited future availability and unsuitability for long-term production requirements. For new designs, prioritize active products to ensure supply chain continuity.

Q: How do transition frequency specifications affect substitute selection?

A: DIMD10A-7 specifies 250MHz and 200MHz transition frequency. Substitute parts range from 130MHz (BCR10PNH6327XTSA1) to 230MHz (PUMD10,115). For applications requiring high-speed switching or RF performance, select substitutes with transition frequency equal to or exceeding 200MHz: PUMD10,115 (230MHz), RN4611(TE85L,F) (200MHz), or BCR35PNH6327XTSA1 (150MHz). For general-purpose applications with lower frequency requirements, BCR10PNH6327XTSA1 (130MHz) is acceptable. Verify application bandwidth requirements before final selection.

Q: What is the significance of Vce saturation voltage differences between substitutes?

A: Vce saturation voltage affects power dissipation and switching characteristics. DIMD10A-7 specifies 300mV maximum saturation voltage. Substitute parts range from 100mV (PUMD10 series) to 300mV (BCR10PNH6327XTSA1, BCR35PNH6327XTSA1, RN4611). Lower saturation voltage (100mV to 250mV) reduces power loss during saturation, improving efficiency. Higher saturation voltage (300mV) matches original specifications. For power-sensitive applications, select substitutes with lower saturation voltage. For direct electrical equivalence, select parts with 300mV saturation voltage.