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DGSS10-06CC Equivalent & Substitute Parts
Part Overview
The DGSS10-06CC is a GaAS Schottky diode array manufactured by IXYS, configured as a 1 Pair Series Connection rated for 600 V DC reverse voltage and 25 A average rectified current per diode. The device is packaged in ISOPLUS220™ through-hole format with a junction operating temperature range of -55°C to 175°C. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing system support and new design implementations.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) (per Diode) | 25 A |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 10 A |
| Reverse Recovery Time (trr) | 23 ns |
| Current - Reverse Leakage @ Vr | 250 µA @ 600 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS220™ |
| Diode Configuration | 1 Pair Series Connection |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) |
Substitute Part Grouping Explanation
Substitution of the DGSS10-06CC is based on electrical and mechanical parameter compatibility within the diode rectifier category. The following parameters establish substitution eligibility:
Critical Matching Parameters:
- Voltage - DC Reverse (Vr) (Max): 600 V
- Diode Configuration: 1 Pair Series Connection
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220™
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
- Operating Temperature - Junction: -55°C ~ 175°C
Allowable Variation Parameters:
- Current - Average Rectified (Io) (per Diode): Equal or greater than 25 A
- Voltage - Forward (Vf) (Max) @ If: Lower or equal values preferred
- Reverse Recovery Time (trr): Within fast recovery specification
- Current - Reverse Leakage @ Vr: Within acceptable limits for application
The DSEE29-12CC meets all critical matching parameters and demonstrates improved electrical performance characteristics, qualifying it as a direct substitute for the obsolete DGSS10-06CC.
Parameter Comparison
| Parameter | DGSS10-06CC | DSEE29-12CC | Compatibility |
|---|---|---|---|
| Manufacturer | IXYS | IXYS | Match |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | Match |
| Current - Average Rectified (Io) (per Diode) | 25 A | 30 A | Substitute Rated Higher |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 10 A | 1.62 V @ 30 A | Substitute Lower |
| Reverse Recovery Time (trr) | 23 ns | 35 ns | Substitute Within Specification |
| Current - Reverse Leakage @ Vr | 250 µA @ 600 V | 500 µA @ 600 V | Substitute Higher |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | Match |
| Mounting Type | Through Hole | Through Hole | Match |
| Package / Case | ISOPLUS220™ | ISOPLUS220™ | Match |
| Diode Configuration | 1 Pair Series Connection | 1 Pair Series Connection | Match |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Match |
| Product Status | Obsolete | Active | Substitute Available |
Engineering Selection Recommendations
The DSEE29-12CC is a qualified substitute for the obsolete DGSS10-06CC based on the following factors:
Electrical Compatibility: Both devices maintain identical 600 V DC reverse voltage ratings and 1 Pair Series Connection configuration. The DSEE29-12CC provides 30 A average rectified current capacity, exceeding the DGSS10-06CC requirement of 25 A. Forward voltage characteristics of the DSEE29-12CC are lower at 1.62 V @ 30 A compared to 2.1 V @ 10 A, resulting in reduced power dissipation in equivalent applications.
Mechanical Compatibility: Both parts utilize identical ISOPLUS220™ through-hole packaging and mounting configuration, enabling direct board-level substitution without layout modifications.
Thermal Compatibility: Operating temperature ranges are identical at -55°C to 175°C junction temperature, ensuring equivalent thermal performance envelope.
Product Availability: The DGSS10-06CC is classified as obsolete with limited inventory. The DSEE29-12CC is an active product with 3509 units in stock, providing supply chain continuity.
Compliance Status: The DSEE29-12CC carries ROHS3 compliance certification and REACH Unaffected status, meeting current regulatory requirements. Both devices are classified as EAR99 with identical HTSUS coding.
Frequently Asked Questions (FAQ)
Q: Can the DSEE29-12CC directly replace the DGSS10-06CC in existing designs?
A: Yes. Both devices share identical package format (ISOPLUS220™), mounting type (through-hole), voltage rating (600 V), configuration (1 Pair Series Connection), and operating temperature range (-55°C to 175°C). No board modifications are required for substitution.
Q: What are the electrical differences between these two parts?
A: The DSEE29-12CC provides higher current capacity (30 A versus 25 A), lower forward voltage drop (1.62 V @ 30 A versus 2.1 V @ 10 A), and slightly longer reverse recovery time (35 ns versus 23 ns). All parameters remain within fast recovery diode specifications.
Q: Why is the DGSS10-06CC classified as obsolete?
A: The DGSS10-06CC is an older GaAS Schottky technology device. The DSEE29-12CC represents a newer generation standard technology diode array with improved performance characteristics and active manufacturing status.
Q: Are there any compliance or certification differences?
A: The DSEE29-12CC carries ROHS3 compliance certification, while the DGSS10-06CC does not specify this status. Both devices are REACH Unaffected and carry identical EAR99 export classification.
Q: What is the packaging difference between these parts?
A: The DGSS10-06CC is supplied without specified packaging. The DSEE29-12CC is supplied in tube packaging. Both use identical ISOPLUS220™ component packages suitable for through-hole mounting.
Q: Will the DSEE29-12CC perform better in my application?
A: The DSEE29-12CC demonstrates lower forward voltage drop, which reduces power dissipation and heat generation. Higher current rating provides additional design margin. Reverse recovery time is slightly longer but remains within fast recovery classification. Application performance depends on specific circuit requirements.
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